JP2007129203A - 半導体デバイスの製造方法 - Google Patents
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- JP2007129203A JP2007129203A JP2006266455A JP2006266455A JP2007129203A JP 2007129203 A JP2007129203 A JP 2007129203A JP 2006266455 A JP2006266455 A JP 2006266455A JP 2006266455 A JP2006266455 A JP 2006266455A JP 2007129203 A JP2007129203 A JP 2007129203A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 98
- 150000004767 nitrides Chemical class 0.000 claims abstract description 82
- 230000007704 transition Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
【解決手段】 III族窒化物パワー半導体デバイスの製造方法において、少なくとも2つの異なる成長方法により、遷移層を基板上で成長させる。
【選択図】 図2
Description
12 遷移層
13 遷移層
14 基板
16 第1のIII族窒化物半導体層
18 第2のIII族窒化物半導体層
20 ソース電極
22 ドレイン電極
24 ゲート電極
26 第1のIII族窒化物半導体層
28 第2のIII族窒化物半導体層
30 第3のIII族窒化物半導体層
Claims (22)
- パワー半導体デバイスの製造方法であって、
導電性の基板を用意し、
第1の成長方法を用いて、前記基板の主たる表面上に、少なくとも第1のIII族窒化物半導体層を成長させ、第2の成長方法を用いて、前記少なくとも第1のIII族窒化物半導体層上に、少なくとも第2のIII族窒化物半導体層を成長させることにより、前記基板上に、III族窒化物遷移層を成長させて、
前記遷移層上に、活性領域を形成することを特徴とする製造方法。 - 前記基板は、珪素を含んでいる、請求項1記載の製造方法。
- 前記基板は、炭化珪素を含んでいる、請求項1記載の製造方法。
- 前記第1の成長方法は、MBE法であり、前記第2の成長方法は、HVPE法である、請求項1記載の製造方法。
- 前記第1の成長方法は、MBE法であり、前記第2の成長方法は、MOCVD法である、請求項1記載の製造方法。
- 前記第1の成長方法は、HVPE法であり、前記第2の成長方法は、MBE法である、請求項1記載の製造方法。
- 前記第1の成長方法は、HVPE法であり、前記第2の成長方法は、MOCVD法である、請求項1記載の製造方法。
- 前記第1の成長方法は、MOCVD法であり、前記第2の成長方法は、HVPE法である、請求項1記載の製造方法。
- 前記第1の成長方法は、MOCVD法であり、前記第2の成長方法は、MBE法である、請求項1記載の製造方法。
- 第3の成長方法を用いて、前記第2のIII族窒化物半導体層上に、第3のIII族窒化物半導体層を成長させることを特徴とする、請求項1記載の製造方法。
- 前記第1の成長方法は、MBE法であり、前記第2の成長方法は、HVPE法であり、前記第3の成長方法は、MOCVD法である、請求項10記載の製造方法。
- 前記第1の成長方法は、MBE法であり、前記第2の成長方法は、MOCVD法であり、前記第3の成長方法は、HVPE法である、請求項10記載の製造方法。
- 前記第1の成長方法は、HVPE法であり、前記第2の成長方法は、MBE法であり、前記第3の成長方法は、MOCVD法である、請求項10記載の製造方法。
- 前記第1の成長方法は、HVPE法であり、前記第2の成長方法は、MOCVD法であり、前記第3の成長方法は、MBE法である、請求項10記載の製造方法。
- 前記第1の成長方法は、MOCVD法であり、前記第2の成長方法は、HVPE法であり、前記第3の成長方法は、MBE法である、請求項10記載の製造方法。
- 前記第1の成長方法は、MOCVD法であり、前記第2の成長方法は、MBE法であり、前記第3の成長方法は、HVPE法である、請求項10記載の製造方法。
- 複数の第1のIII族窒化物半導体層と、複数の第2のIII族窒化物半導体層と、複数の第3のIII族窒化物半導体層とを有し、前記第1、第2及び第3のIII族窒化物半導体層を、交互に設けてある、請求項10記載の製造方法。
- 前記遷移層は、AlNを含んでいる、請求項1記載の製造方法。
- 前記遷移層の組成は、厚さ方向に均一である、請求項1記載の製造方法。
- 前記遷移層の組成は、厚さ方向において傾斜している、請求項1記載の製造方法。
- 前記第1のIII族窒化物半導体層の組成は、前記第2のIII族窒化物半導体層の組成と異なっている、請求項1記載の製造方法。
- 前記第1のIII族窒化物半導体層の組成は、前記第2及び第3のIII族窒化物半導体層の組成とは異なっており、前記第2のIII族窒化物半導体層の組成は、前記第3のIII族窒化物半導体層の組成とは異なっている、請求項10記載の製造方法。
Applications Claiming Priority (2)
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US72251005P | 2005-09-30 | 2005-09-30 | |
US11/534,855 US8614129B2 (en) | 2005-09-30 | 2006-09-25 | Method for fabricating a semiconductor device |
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JP2007129203A true JP2007129203A (ja) | 2007-05-24 |
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US (4) | US8614129B2 (ja) |
JP (1) | JP2007129203A (ja) |
FR (1) | FR2891663B1 (ja) |
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US8614129B2 (en) * | 2005-09-30 | 2013-12-24 | International Rectifier Corporation | Method for fabricating a semiconductor device |
US20100244203A1 (en) * | 2007-11-15 | 2010-09-30 | S.O.I.Tec Silicon On Insulator Technologies | Semiconductor structure having a protective layer |
US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US20120103419A1 (en) * | 2010-10-27 | 2012-05-03 | The Regents Of The University Of California | Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material |
US11217722B2 (en) | 2015-07-10 | 2022-01-04 | The Regents Of The University Of California | Hybrid growth method for III-nitride tunnel junction devices |
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JP2004235193A (ja) * | 2003-01-28 | 2004-08-19 | Sharp Corp | 窒化物系iii−v族化合物半導体装置の製造方法および窒化物系iii−v族化合物半導体装置 |
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US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US6218280B1 (en) | 1998-06-18 | 2001-04-17 | University Of Florida | Method and apparatus for producing group-III nitrides |
US6566256B1 (en) | 1999-04-16 | 2003-05-20 | Gbl Technologies, Inc. | Dual process semiconductor heterostructures and methods |
JP4034015B2 (ja) | 1999-09-01 | 2008-01-16 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
US6673149B1 (en) | 2000-09-06 | 2004-01-06 | Matsushita Electric Industrial Co., Ltd | Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate |
US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
JP3946969B2 (ja) | 2001-05-31 | 2007-07-18 | 日本碍子株式会社 | 電界効果トランジスタ、及びヘテロ接合型バイポーラトランジスタ |
US6831293B2 (en) * | 2002-03-19 | 2004-12-14 | Showa Denko Kabushiki Kaisha | P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source |
US8614129B2 (en) * | 2005-09-30 | 2013-12-24 | International Rectifier Corporation | Method for fabricating a semiconductor device |
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- 2006-09-25 US US11/534,855 patent/US8614129B2/en active Active
- 2006-09-29 JP JP2006266455A patent/JP2007129203A/ja active Pending
- 2006-10-02 FR FR0608628A patent/FR2891663B1/fr active Active
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- 2013-12-19 US US14/135,425 patent/US8865575B2/en active Active
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- 2014-10-15 US US14/515,449 patent/US9117671B2/en active Active
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JP2004235193A (ja) * | 2003-01-28 | 2004-08-19 | Sharp Corp | 窒化物系iii−v族化合物半導体装置の製造方法および窒化物系iii−v族化合物半導体装置 |
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Publication number | Publication date |
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US20150037965A1 (en) | 2015-02-05 |
US20140106548A1 (en) | 2014-04-17 |
US9117671B2 (en) | 2015-08-25 |
US8865575B2 (en) | 2014-10-21 |
US20150357182A1 (en) | 2015-12-10 |
US20070077714A1 (en) | 2007-04-05 |
FR2891663B1 (fr) | 2010-11-26 |
US8614129B2 (en) | 2013-12-24 |
FR2891663A1 (fr) | 2007-04-06 |
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