EP2250674A4 - Semiconductor-based large-area flexible electronic devices - Google Patents

Semiconductor-based large-area flexible electronic devices

Info

Publication number
EP2250674A4
EP2250674A4 EP08871774A EP08871774A EP2250674A4 EP 2250674 A4 EP2250674 A4 EP 2250674A4 EP 08871774 A EP08871774 A EP 08871774A EP 08871774 A EP08871774 A EP 08871774A EP 2250674 A4 EP2250674 A4 EP 2250674A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor
electronic devices
flexible electronic
area flexible
based large
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP08871774A
Other languages
German (de)
French (fr)
Other versions
EP2250674A1 (en
Inventor
Amit Goyal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/011,450 external-priority patent/US8178221B2/en
Priority claimed from PCT/US2008/002944 external-priority patent/WO2008112115A1/en
Application filed by Individual filed Critical Individual
Publication of EP2250674A1 publication Critical patent/EP2250674A1/en
Publication of EP2250674A4 publication Critical patent/EP2250674A4/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
EP08871774A 2008-01-28 2008-09-09 Semiconductor-based large-area flexible electronic devices Ceased EP2250674A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/011,450 US8178221B2 (en) 2000-07-10 2008-01-28 {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices
PCT/US2008/002944 WO2008112115A1 (en) 2007-03-08 2008-03-06 Novel, semiconductor-based, large-area, flexible, electronic devices
PCT/US2008/010511 WO2009096931A1 (en) 2008-01-28 2008-09-09 Semiconductor-based large-area flexible electronic devices

Publications (2)

Publication Number Publication Date
EP2250674A1 EP2250674A1 (en) 2010-11-17
EP2250674A4 true EP2250674A4 (en) 2013-02-13

Family

ID=40921967

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08871774A Ceased EP2250674A4 (en) 2008-01-28 2008-09-09 Semiconductor-based large-area flexible electronic devices

Country Status (6)

Country Link
EP (1) EP2250674A4 (en)
CN (1) CN101981699B (en)
AU (1) AU2008349509B2 (en)
CA (1) CA2742128C (en)
HK (1) HK1150093A1 (en)
WO (1) WO2009096931A1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101981685B (en) * 2008-01-28 2015-05-20 阿米特·戈亚尔 [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
US8466447B2 (en) 2009-08-06 2013-06-18 Alliance For Sustainable Energy, Llc Back contact to film silicon on metal for photovoltaic cells
US8575471B2 (en) 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8961687B2 (en) 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
JP5817327B2 (en) 2010-09-29 2015-11-18 東ソー株式会社 Oxide sintered body, method for producing the same, oxide transparent conductive film obtained using the same, and solar cell
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
US9041027B2 (en) 2010-12-01 2015-05-26 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
CN102088060A (en) * 2010-12-06 2011-06-08 电子科技大学 Laminated organic thin-film solar cell and preparation method thereof
CN102127735A (en) * 2011-02-21 2011-07-20 中国科学院电工研究所 Method for modifying metal baseband surface used for YBCO (YBa2Cu3O(7-x)) coating
CN102569369A (en) * 2012-02-13 2012-07-11 中国科学院苏州纳米技术与纳米仿生研究所 Random noise source
EP3120385A4 (en) * 2014-03-18 2017-10-18 Intel Corporation Semiconductor assemblies with flexible substrates
US9735318B2 (en) * 2015-02-10 2017-08-15 iBeam Materials, Inc. Epitaxial hexagonal materials on IBAD-textured substrates
WO2016179458A1 (en) * 2015-05-06 2016-11-10 Hutchinson Technology Incorporated Plasma treatments for flexures of hard disk drives
JP6730301B2 (en) * 2015-11-02 2020-07-29 日本碍子株式会社 Method for manufacturing epitaxial substrate for semiconductor device
US10075143B2 (en) 2015-11-13 2018-09-11 IQE, plc Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
US10923345B2 (en) 2016-03-23 2021-02-16 Iqe Plc Epitaxial metal oxide as buffer for epitaxial III-V layers
US11495670B2 (en) 2016-09-22 2022-11-08 Iqe Plc Integrated epitaxial metal electrodes
US10418457B2 (en) 2016-09-22 2019-09-17 Iqe Plc Metal electrode with tunable work functions
TWI764930B (en) 2016-09-22 2022-05-21 英商Ｉｑｅ有限公司 Integrated epitaxial metal electrodes
FR3079534B1 (en) 2018-03-28 2022-03-18 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL
CN111900223A (en) * 2020-08-21 2020-11-06 北京绿兴能源科技有限公司 Flexible double-sided composite folding solar cell and preparation method thereof
CN112599623B (en) * 2021-03-03 2021-07-06 中山德华芯片技术有限公司 Flexible diode chip and manufacturing method thereof
CN114038902B (en) * 2021-12-01 2022-07-01 上海镓芯科技有限公司 Transient voltage suppression diode of thin film type semiconductor
CN113956033B (en) * 2021-12-06 2023-05-02 武汉理工大学 Medium high Q value microwave dielectric ceramic and preparation method thereof
CN114975645B (en) * 2022-05-14 2024-03-19 南京大学 Rare earth doped III-V semiconductor structure and photoelectric detector structure thereof
CN116516474B (en) * 2023-06-25 2023-09-26 合肥芯胜半导体有限公司 Structure and method for growing CdTe epitaxial layer on GaAs substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872988B1 (en) * 2004-03-23 2005-03-29 Ut-Battelle, Llc Semiconductor films on flexible iridium substrates
US20070044832A1 (en) * 2005-08-25 2007-03-01 Fritzemeier Leslie G Photovoltaic template

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784139B1 (en) * 2000-07-10 2004-08-31 Applied Thin Films, Inc. Conductive and robust nitride buffer layers on biaxially textured substrates
WO2005015579A2 (en) * 2002-12-02 2005-02-17 North Carolina State University Methods of forming three-dimensional nanodot arrays in a matrix
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
KR20050054788A (en) * 2003-12-06 2005-06-10 삼성전자주식회사 Fabrication method of poly-crystalline si thin film and transistor thereby
WO2006130558A2 (en) * 2005-06-01 2006-12-07 The Board Of Trustees Of The University Of Illinois Flexible structures for sensors and electronics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872988B1 (en) * 2004-03-23 2005-03-29 Ut-Battelle, Llc Semiconductor films on flexible iridium substrates
US20070044832A1 (en) * 2005-08-25 2007-03-01 Fritzemeier Leslie G Photovoltaic template

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GOYAL A ET AL: "Low cost, single crystal-like substrates for practical, high efficiency solar cells", AIP CONFERENCE PROCEEDINGS AIP USA, no. 404, 1997, pages 377 - 394, XP002689485, ISSN: 0094-243X *
See also references of WO2009096931A1 *

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