HK1150093A1 - Semiconductor-based large-area flexible electronic devices - Google Patents
Semiconductor-based large-area flexible electronic devicesInfo
- Publication number
- HK1150093A1 HK1150093A1 HK11103841.2A HK11103841A HK1150093A1 HK 1150093 A1 HK1150093 A1 HK 1150093A1 HK 11103841 A HK11103841 A HK 11103841A HK 1150093 A1 HK1150093 A1 HK 1150093A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- devices
- semiconductor
- electronic devices
- flexible electronic
- area flexible
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000005424 photoluminescence Methods 0.000 abstract 1
- 239000002096 quantum dot Substances 0.000 abstract 1
Classifications
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45°-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices,, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/011,450 US8178221B2 (en) | 2000-07-10 | 2008-01-28 | {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices |
PCT/US2008/002944 WO2008112115A1 (en) | 2007-03-08 | 2008-03-06 | Novel, semiconductor-based, large-area, flexible, electronic devices |
PCT/US2008/010511 WO2009096931A1 (en) | 2008-01-28 | 2008-09-09 | Semiconductor-based large-area flexible electronic devices |
Publications (1)
Publication Number | Publication Date |
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HK1150093A1 true HK1150093A1 (en) | 2011-10-28 |
Family
ID=40921967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11103841.2A HK1150093A1 (en) | 2008-01-28 | 2011-04-18 | Semiconductor-based large-area flexible electronic devices |
Country Status (6)
Country | Link |
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EP (1) | EP2250674A4 (en) |
CN (1) | CN101981699B (en) |
AU (1) | AU2008349509B2 (en) |
CA (1) | CA2742128C (en) |
HK (1) | HK1150093A1 (en) |
WO (1) | WO2009096931A1 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101981685B (en) * | 2008-01-28 | 2015-05-20 | 阿米特·戈亚尔 | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
US8466447B2 (en) | 2009-08-06 | 2013-06-18 | Alliance For Sustainable Energy, Llc | Back contact to film silicon on metal for photovoltaic cells |
US8575471B2 (en) | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
US8961687B2 (en) | 2009-08-31 | 2015-02-24 | Alliance For Sustainable Energy, Llc | Lattice matched crystalline substrates for cubic nitride semiconductor growth |
JP5817327B2 (en) | 2010-09-29 | 2015-11-18 | 東ソー株式会社 | Oxide sintered body, method for producing the same, oxide transparent conductive film obtained using the same, and solar cell |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
CN102088060A (en) * | 2010-12-06 | 2011-06-08 | 电子科技大学 | Laminated organic thin-film solar cell and preparation method thereof |
CN102127735A (en) * | 2011-02-21 | 2011-07-20 | 中国科学院电工研究所 | Method for modifying metal baseband surface used for YBCO (YBa2Cu3O(7-x)) coating |
CN102569369A (en) * | 2012-02-13 | 2012-07-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Random noise source |
EP3120385A4 (en) * | 2014-03-18 | 2017-10-18 | Intel Corporation | Semiconductor assemblies with flexible substrates |
US9735318B2 (en) * | 2015-02-10 | 2017-08-15 | iBeam Materials, Inc. | Epitaxial hexagonal materials on IBAD-textured substrates |
WO2016179458A1 (en) * | 2015-05-06 | 2016-11-10 | Hutchinson Technology Incorporated | Plasma treatments for flexures of hard disk drives |
JP6730301B2 (en) * | 2015-11-02 | 2020-07-29 | 日本碍子株式会社 | Method for manufacturing epitaxial substrate for semiconductor device |
US10075143B2 (en) | 2015-11-13 | 2018-09-11 | IQE, plc | Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride |
US10923345B2 (en) | 2016-03-23 | 2021-02-16 | Iqe Plc | Epitaxial metal oxide as buffer for epitaxial III-V layers |
US11495670B2 (en) | 2016-09-22 | 2022-11-08 | Iqe Plc | Integrated epitaxial metal electrodes |
US10418457B2 (en) | 2016-09-22 | 2019-09-17 | Iqe Plc | Metal electrode with tunable work functions |
TWI764930B (en) | 2016-09-22 | 2022-05-21 | 英商Iqe有限公司 | Integrated epitaxial metal electrodes |
FR3079534B1 (en) | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL |
CN111900223A (en) * | 2020-08-21 | 2020-11-06 | 北京绿兴能源科技有限公司 | Flexible double-sided composite folding solar cell and preparation method thereof |
CN112599623B (en) * | 2021-03-03 | 2021-07-06 | 中山德华芯片技术有限公司 | Flexible diode chip and manufacturing method thereof |
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CN113956033B (en) * | 2021-12-06 | 2023-05-02 | 武汉理工大学 | Medium high Q value microwave dielectric ceramic and preparation method thereof |
CN114975645B (en) * | 2022-05-14 | 2024-03-19 | 南京大学 | Rare earth doped III-V semiconductor structure and photoelectric detector structure thereof |
CN116516474B (en) * | 2023-06-25 | 2023-09-26 | 合肥芯胜半导体有限公司 | Structure and method for growing CdTe epitaxial layer on GaAs substrate |
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US6784139B1 (en) * | 2000-07-10 | 2004-08-31 | Applied Thin Films, Inc. | Conductive and robust nitride buffer layers on biaxially textured substrates |
WO2005015579A2 (en) * | 2002-12-02 | 2005-02-17 | North Carolina State University | Methods of forming three-dimensional nanodot arrays in a matrix |
GB2398672A (en) * | 2003-02-19 | 2004-08-25 | Qinetiq Ltd | Group IIIA nitride buffer layers |
KR20050054788A (en) * | 2003-12-06 | 2005-06-10 | 삼성전자주식회사 | Fabrication method of poly-crystalline si thin film and transistor thereby |
US6872988B1 (en) * | 2004-03-23 | 2005-03-29 | Ut-Battelle, Llc | Semiconductor films on flexible iridium substrates |
WO2006130558A2 (en) * | 2005-06-01 | 2006-12-07 | The Board Of Trustees Of The University Of Illinois | Flexible structures for sensors and electronics |
WO2007025062A2 (en) * | 2005-08-25 | 2007-03-01 | Wakonda Technologies, Inc. | Photovoltaic template |
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- 2008-09-09 EP EP08871774A patent/EP2250674A4/en not_active Ceased
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CN101981699A (en) | 2011-02-23 |
AU2008349509A1 (en) | 2009-08-06 |
CA2742128A1 (en) | 2009-08-06 |
EP2250674A4 (en) | 2013-02-13 |
CA2742128C (en) | 2016-11-29 |
EP2250674A1 (en) | 2010-11-17 |
WO2009096931A1 (en) | 2009-08-06 |
AU2008349509B2 (en) | 2013-12-19 |
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