CN114038902B - Transient voltage suppression diode of thin film type semiconductor - Google Patents
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
The invention relates to a transient voltage suppression diode of a thin film type semiconductor in the field of semiconductors. The transient voltage suppression diode of the thin film type semiconductor combines a semiconductor thin film technology with a flip technology, most heat is led out through a substrate, and a composite structure which has two low forbidden band widths with different free lattice constants and is a high-resistance weak N-type or a high-resistance weak P-type semiconductor material is constructed in a heterojunction which is constructed by two different high forbidden band widths semiconductor materials by utilizing energy band engineering design, so that the transient voltage suppression diode of the thin film type semiconductor with an N-delta-P heterojunction structure is formed.
Description
Technical Field
The invention relates to a transient voltage suppression diode of a thin film type semiconductor in the field of semiconductors.
Background
A Transient Voltage Suppressor (TVS) is a diode-type high-performance protection device. When the two poles of the TVS diode are subjected to a reverse transient high energy impact (as shown in fig. 1(a)), it can change the high impedance between the two poles into a low impedance at a speed of picoseconds, absorb a surge power of up to several kilowatts, clamp (Clamping Voltage, as shown in fig. 1(b)) the Voltage between the two poles at a predetermined value, and effectively protect the precision components in the electronic circuit from various surge pulses. The high-power high-voltage power source has the advantages of fast response time, large transient power, low leakage current, breakdown voltage deviation, easiness in control of clamping voltage, no damage limit, small size and the like. Moreover, the bidirectional TVS can absorb instantaneous large pulse power in positive and negative directions and clamp the voltage in a preset range; generally, a bidirectional TVS is applied to an ac circuit, and a unidirectional TVS is generally applied to a dc circuit. Currently, TVS has been widely used in various fields such as computer systems, communication equipment, ac/dc power supplies, automobiles, electronic ballasts, home appliances, instruments and meters, (watt-hour meters), RS232/422/423/485, I/O, LAN, ISDN, ADSL, USB, MP3, PDAS, GPS, CDMA, GSM, protection of digital cameras, common mode/differential mode protection, RF coupling/IC drive reception protection, suppression of electromagnetic wave interference of motors, audio/video input, sensors/transmissions, industrial control circuits, relays, suppression of noise of contactors, and the like.
Conventional TVS diodes are primarily based on silicon materials, limited by the relatively low electron mobility of silicon itself (1000 cm)2V · s), the high frequency response of which is limited; limited by the lower forbidden band width of silicon (Eg ═ 1.1 eV); the larger the forbidden band width, the more difficult it is for electrons to transit, resulting in a tolerable maximum impact Voltage, also called Reverse Breakdown Voltage or Breakdown Voltage (V for short)BR) Limited; chip fabrication processes that are limited to silicon by itself: the thickness of the substrate is 650 microns, and the substrate is thinned to 100 microns at most, so that the substrate has high thermal resistance and cannot bear high-power surge impact.
In non-patent document 2, it is disclosed that the recombination rate of electron-hole pairs can be effectively reduced by constructing a heterojunction using two (or more) kinds of semiconductors.
Documents of the prior art
Non-patent document 1: GaAsSb/InP heterojunction bipolar transistor based on energy band engineering design
Non-patent document 2: carbon-based heterojunction design and photocatalytic performance research based on energy band engineering
Disclosure of Invention
The invention aims to provide a transient voltage suppression diode of a thin film semiconductor. The thin film type semiconductor adopts a thin film flip-chip structure, combines a semiconductor thin film technology with the flip-chip technology, leads most of heat out through a substrate, utilizes energy band engineering design, and adopts an n-delta-p heterojunction structure, so that the transient voltage suppression diode has higher frequency response and can bear higher impulse voltage and impulse power. The invention realizes the purpose through the following technical scheme:
according to an aspect of the present invention, there is provided a transient voltage suppression diode of a thin film type semiconductor, wherein the structure of the diode sequentially comprises: a first N-type metal electrode, a first N-type semiconductor layer, a second N-type semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth P-type semiconductor layer, a sixth P-type semiconductor layer, and a second P-type metal electrode; the first N-type semiconductor layer and the first N-type metal electrode form ohmic contact, and the first N-type semiconductor layer is a carrier providing layer; the sixth P-type semiconductor layer and the second P-type metal electrode form ohmic contact, and the sixth P-type semiconductor layer is a carrier providing layer; the second N-type semiconductor layer and the fifth P-type semiconductor layer form a heterojunction; the third semiconductor layer and the fourth semiconductor layer are both high-resistance weak N-type semiconductors or high-resistance weak P-type semiconductors, and the free-state lattice constant of the third semiconductor layer is not equal to that of the fourth semiconductor layer; the third semiconductor layer is a strain layer and can induce the avalanche breakdown of the fourth semiconductor layer.
According to the transient voltage suppression diode of the thin film type semiconductor, the first N type semiconductor layer is mainly made of GaAs and has the doping concentration of 5e18cm-3And 1e20cm-3In the thickness range of 200nm to 900nm, and the free-state lattice constant is 0.5653 nm.
According to the transient voltage suppressor diode of thin film type semiconductor of one embodiment of the present invention, the second N type semiconductor layer is mainly composed of Al0.5ln0.5P, doping concentration equal to 2e18cm-3The thickness is 200 nm-500 nm, and the free state lattice constant is 0.5653 nm.
According to the transient voltage suppressor diode of a thin film type semiconductor of one embodiment of the present invention, the third semiconductor layer has a main composition of In0.07Ga0.93As, doping concentration of 1e16cm or less-3The thickness is in the range of 5nm to 50nm, and the free state lattice constant is 0.5681 nm.
According to the transient voltage suppression diode of the thin film type semiconductor of one embodiment of the present invention, the fourth semiconductor layer is mainly composed of GaAs and has a doping concentration of 1e16cm or less-3The thickness range is 1000 nm-10000 nm, and the free state lattice constant is 0.5653 nm.
According to the transient voltage suppressor diode of thin film type semiconductor of one embodiment of the present invention, the fifth P type semiconductor layer has a main composition of Ga0.5ln0.5P, doping concentration equal to 2e18cm-3The thickness range is 200 nm-1000 nm, and the free state lattice constant is 0.5653 nm.
According to the transient voltage suppression diode of the thin film type semiconductor of one embodiment of the present invention, the sixth P-type semiconductor layer is mainly composed of GaAs and has a doping concentration of 5e18cm-3And 2e20cm-3The thickness range is 200 nm-900 nm, and the free state lattice constant is 0.5653 nm.
According to the transient voltage suppression diode of the thin film type semiconductor of one embodiment of the present invention, the first N-type metal electrode is mainly composed of one or more of gold, palladium, silver, platinum, aluminum, indium, copper, nickel, titanium, and germanium, and has a thickness ranging from 2 μm to 3 μm.
According to the transient voltage suppression diode of the thin film type semiconductor of one embodiment of the present invention, the second P-type metal electrode is mainly composed of one or more of gold, palladium, silver, platinum, aluminum, indium, copper, nickel, and titanium, and has a thickness ranging from 10 μm to 100 μm. According to the transient voltage suppression diode of the thin film type semiconductor of one embodiment of the present invention, the fifth P type semiconductor layer and the sixth P type semiconductor layer are partially etched by a depth equal to the sum of the thicknesses of the fifth P type semiconductor layer and the sixth P type semiconductor layer, and filled with a thermally conductive insulating material.
According to the transient voltage suppressor diode of thin film type semiconductor of one embodiment of the present invention, said fourth semiconductor layer is partially etched in area to a depth not exceeding the thickness of said fourth semiconductor layer
And filled with a thermally conductive and insulating material.
According to the transient voltage suppression diode of the thin film type semiconductor of one embodiment of the present invention, the thermally conductive insulating material includes silicon oxide, aluminum oxide or ceramic.
The invention has the beneficial effects that:
firstly, the high forbidden band width of the material is utilized to increase the reverse breakdown voltage V of the TVSBR。
Secondly, the substrate thickness is reduced by utilizing the characteristic of easy heat conduction of the film inverted semiconductor, so that the thermal resistance is reduced, and the impact capability of dealing with high-power surge is further improved.
Thirdly, the high mobility of the material is utilized to improve the frequency response speed of the TVS, and the junction capacitance value of the diode is further reduced through the asymmetric capacitor structure, so that the switching speed and the frequency response of the TVS diode are improved.
Fourthly, by utilizing the stress growth technology of InGaAs/GaAs, the initial current of avalanche breakdown on a GaAs interface is increased through a 50nm InGaAs strain layer, so that the current density of the avalanche breakdown is increased, and the conduction capability of the device is improved.
Drawings
FIG. 1(a) is a schematic diagram of a transient voltage suppression circuit of a TVS in the prior art;
FIG. 1(b) is a voltage curve diagram of a TVS voltage clamping method in the prior art;
FIG. 2 is an exemplary n- δ -p structure TVS embodiment of the present invention;
FIG. 3(a) is a schematic diagram of a free InGaAs lattice and a free GaAs lattice;
FIG. 3(b) is a schematic diagram illustrating the strain of the InGaAs lattice and the GaAs lattice of the n- δ -p structure TVS in the embodiment;
fig. 4 is an n- δ -P structure TVS embodiment of still another exemplary fifth and sixth P-type semiconductor layers of the present invention after being etched;
FIG. 5(a) is a schematic diagram of a conventional capacitor structure;
FIG. 5(b) is a schematic diagram of an asymmetric capacitor structure;
fig. 6 is a TVS embodiment of an N- δ -p structure according to still another exemplary embodiment of the present invention after etching the fourth N-type semiconductor layer.
Detailed Description
The following examples are intended to better understand the nature of the invention and are not intended to limit the invention to the described examples. Furthermore, the terms "first" and "second" are used to distinguish one description from another, and are not to be construed as indicating or implying relative importance. In the description of the embodiments, the concept of the semiconductor thin film layer upper surface, the semiconductor thin film layer lower surface, and the like is employed. It should be understood that the terms "upper" and "lower" as used herein are terms of orientation. As such, embodiments of the present invention may be placed in a variety of orientations. The following detailed description is not to be taken in a limiting sense, without departing from the scope of the present invention.
It will be appreciated by those skilled in the art that changes could be made to these embodiments without departing from the principles of the invention, and that the advantages of the invention will be realized.
In the field of semiconductor materials, band theory holds that electrons in a chemical substance system are not localized electrons, but delocalized electrons existing in the whole system; the whole system forms molecular orbitals with discontinuous energy, and can be subdivided into a full band, a valence band, a forbidden band, a conduction band and an empty band. The valence band is the highest energy track in the full band, and the conduction band is the lowest energy track in the empty band. From the viewpoint of quantum mechanics, the energy of each orbital level is discontinuous, but in the full band, the energy difference of each level is very small, and therefore, it can be regarded as an energy-continuous orbital; and the energy difference between the full band and the empty band is large, thereby forming a forbidden band that inhibits the presence of electrons. In other words, the larger the forbidden band width, the higher the voltage it can withstand, and the higher the power. When the material has avalanche effect, the voltage born by the material is less than the reverse breakdown voltage VBRSince the avalanche effect is a chain multiplication reaction of electrons, the current thereof is rapidly amplified by the chain effect. On the premise of ensuring that the voltage at two ends of the TVS is smaller than the reverse breakdown voltage and the TVS is not damaged, the voltage is smaller than the breakdown voltage V through the avalanche effectBRThe mode of (2) is reversely conducted, the electric energy of the load connected in parallel is quickly released, and the effect of protecting the load and TVS can be achieved.
The invention discloses a transient voltage suppression diode of a thin film semiconductor, which is constructed based on an energy band theory. Between the N-type metal electrode and the P-type metal electrode, two different semiconductor materials with high forbidden band widths are adopted to construct a heterojunction with a composite structure; to increase the reverse breakdown voltage of the TVS. Furthermore, the heterojunction also contains free crystalsThe two low forbidden band widths with different lattice constants are the composite structure of high-resistance weak N-type or high-resistance weak P-type semiconductor materials, and the composite structure is called as a delta structure in the invention. Particularly, the technical scheme disclosed by the invention enables the doping concentration to be lower than 1e16cm-3An N-type semiconductor (scientific notation, power of 10 is denoted by e), which is called a high-resistance weak N-type semiconductor; in contrast, the doping concentration is lower than 1e16cm-3The P-type semiconductor of (2) is referred to as a high-resistance weak-P-type semiconductor. Upon avalanche breakdown, the delta structure provides a higher current density, inducing avalanche breakdown. In the thin film flip-chip semiconductor containing the heterojunction, a semiconductor composite structure with a delta structure is added, and the semiconductor composite structure is named as an n-delta-p structure. Moreover, the n-delta-p structure combines the thin film technology with the flip-chip technology, thereby being beneficial to heat dissipation of the device and improving the performance.
The invention will be further explained with reference to the drawings.
As shown in fig. 2, an embodiment 100 of the tvs of thin film type semiconductor according to the present invention has a structure that includes, in order from top to bottom, a first N-type metal electrode 101 mainly composed of one or more of au, pd, ag, pt, al, in, cu, ni, and ti, and having a thickness ranging from 2 μm to 3 μm.
A first N-type semiconductor layer 102, on the upper surface of which a first N-type metal electrode 101 is formed, and which forms an ohmic contact with the first N-type metal electrode 101 to become a carrier supplying layer, such as: the semiconductor mainly composed of GaAs has a low forbidden band width Eg of 1.4eV, and mainly has the function of providing carriers of electron-hole pairs, and the doping concentration of the carriers is 5e18cm-3And 1e20cm-3In the thickness range of 200nm to 900nm, and the free-state lattice constant is 0.5653 nm.
Second N-type semiconductor layer 103, such as: the main component is Al0.5ln0.5P has a high semiconductor energy gap Eg of 2.2eV, a high energy gap which enables a high reverse breakdown voltage and better withstand voltage shock, and a doping concentration of 2e18cm-3The thickness is 200 nm-500 nm, and the free state lattice constant is 0.5653 nm.
A third N-type semiconductor layer 104, such as: mainly comprises high-resistance and weak-N type In0.07Ga0.93As, which has a semiconductor band gap As low As 1.3eV and is a strained layer for inducing avalanche of the fourth N-type semiconductor layer 105; and has a doping concentration of 1e16cm or less-3The free state lattice constant is 0.5681 nm; in order to realize deformation extension, the thickness range is 5 nm-50 nm; in fact, high and weak P-type In may be used0.07Ga0.93The As layer increases the current density.
A fourth N-type semiconductor layer 105, such as: the semiconductor material mainly comprises high-resistance weak N-type GaAs, the forbidden band width of the semiconductor is low Eg (1.4 eV), and the semiconductor material mainly has the function of increasing the current density and is an avalanche generation layer; and has a doping concentration of 1e16cm or less-3The free state lattice constant is 0.5653nm, the free state lattice constant is the same as that of the first N type semiconductor layer, and the thickness range is 1000 nm-10000 nm; in particular, a high and weak P-type GaAs layer may also be used to increase the current density. Third N-type semiconductor layer In0.07Ga0.93As and the fourth N-type semiconductor layer GaAs together form a delta composite structure of N-delta-p. The strength of the electronic energy level transition capability of the semiconductor material is mainly influenced by the material, and the main factors are as follows: 1. the atomic radius; 2. stability of chemical bonds. Wherein, the smaller the atom radius, the stronger the constraint ability of the atom to the self electron, and the larger the forbidden bandwidth. As shown In FIGS. 3(a) and 3(b), In0.07Ga0.93The forbidden band widths of the As and GaAs materials are caused by the atomic radius on one hand; on the other hand, In0.07Ga0.93As and GaAs have different free-state lattice constants, In0.07Ga0.93As crystal lattices are extruded to generate strain under the action of an electric field, and the acting force of chemical covalent bonds is weakened, so that the constraint capacity of the As crystal lattices on electrons is weakened. Electrons are separated from the constraint, and energy level transition occurs; furthermore, the current density of avalanche breakdown is enhanced, and the conduction capability of the device is improved. In particular, the fourth N-type semiconductor layer 105 may also be a semiconductor of high-resistance weak-P-type GaAs, similar to the third N-type semiconductor layer 104. However, the third N-type semiconductor layer 104 and the fourth N-type semiconductor layer 105 need to be both high-resistance weak N-type semiconductors or high-resistance weak P-type semiconductors.
The fifth P-type semiconductor layer 106, such as: the main component is Ga0.5ln0.5P has a semiconductor forbidden band width of 1.9 eV; second N-type semiconductor layer Al0.5ln0.5P and fifth P type semiconductor layer Ga0.5ln0.5P forms a heterojunction in an n-delta-P structure, and the high forbidden band width ensures that the reverse breakdown voltage is high and can better bear voltage impact, so that the doping concentration is equal to 2e18cm-3The thickness range is 200 nm-1000 nm, and the free state lattice constant is 0.5653 nm.
A sixth P-type semiconductor layer 107, on the lower surface of which a second P-type metal electrode 108 is formed, and which forms an ohmic contact with the second P-type metal electrode 108, such as: the semiconductor mainly composed of GaAs has a low forbidden band width Eg of 1.4eV, and mainly has the function of providing carriers of electron-hole pairs, and the doping concentration of the carriers is 5e18cm-3And 1e20cm-3The thickness range is 200 nm-900 nm, and the free state lattice constant is 0.5653 nm.
The second P-type metal electrode 108 mainly comprises one or more of gold, palladium, silver, platinum, aluminum, indium, copper, nickel and titanium, and has a thickness ranging from 10 μm to 100 μm.
A transient voltage suppressing diode (TVS) as shown in embodiment 100, the high frequency response time of the TVS obeys the following equation:
k.R. C or fT＝1/(2πRC)……………………①
Wherein R is the series resistance of embodiment 100, and C is the capacitance of embodiment 100. Embodiment 100 operates under reverse bias conditions, and C is primarily the junction capacitance of embodiment 100, determined by the width of the TVS depletion region and the TVS area. The junction capacitance of TVS follows the following mathematical expression:
where ε is a dielectric constant of GaAs of the fourth N-type semiconductor layer 105, S is a diode cross-sectional area of TVS, and d4Is the thickness of the fourth N-type semiconductor layer 105 GaAs. Since only the third N-type semiconductor layer In is present In the delta composite structure of the N-delta-p type TVS of embodiment 1000.07Ga0.93As and the fourth N-type semiconductor layer GaAs are high-resistance and weak N-type materials, and the thickness of the fourth N-type semiconductor layer GaAs is far larger than that of the third N-type semiconductor layer In0.07Ga0.93The thickness of As. Therefore, the first-order approximate mathematical expression of the TVS series resistance R of the embodiment 100 is:
wherein U is the electron mobility of the GaAs material of the fourth N-type semiconductor layer, N is the electron concentration involved in conduction, q is the basic charge (1.6e-19c), d4And S is defined as the formula (II). Therefore, through calculation, the formulas II and III are substituted into I, and the frequency response time t of the diode is shown to meet the following conditions:
from the equation (iv), it can be seen that when the injection current density n is the same (i.e., when the electron concentration is the same), the U electron mobility becomes a key parameter for determining the TVS frequency response of the embodiment 100.
One of the technological advances of embodiment 100 is realized: in order to improve the high-frequency response and the high-voltage operating condition of the diode, the N-delta-p type diode of the embodiment adopts the second N type semiconductor layer Al with high forbidden bandwidth0.5ln0.5P (Eg ═ 2.2eV) and a fifth P-type semiconductor layer Ga0.5ln0.5P to construct a PN junction. The engineering empirical expression of the reverse breakdown voltage of the TVS is:
wherein N is doping concentration, and the physical dimension of the fifth is volt V. In n- δ -p of this example, Ga having a band gap (Eg) of 1.9eV is used0.5ln0.5P and 2.2eV of Al0.5ln0.5P, in comparison with a forbidden band width of 1.1eVThe reverse breakdown voltage of the silicon semiconductor is respectively improved by 2.3 times to 2.8 times under the condition of the same doping concentration N.
The technical progress of embodiment 100 is represented by two: compared with the conventional silicon semiconductor material, the thin film type III-V material system utilizes the energy band engineering of lattice matched Al (Ga) lnP/GaAs and has the electron mobility of 1000cm2(iv) increase to 7000cm2(iv) v £ s; the response time of the GaAs diode is shortened to one seventh of that of the original silicon diode with the same structure. In order to further improve the frequency response of the diode and shorten the response time, a third N-type semiconductor layer In is added into the device0.07Ga0.93As is used As a strain layer, the forbidden band width Eg of the As is reduced to 1.3eV, and the forbidden band width Eg is reduced by about 0.1eV than that of the GaAs material of the fourth N-type semiconductor layer; the free state lattice constant is 0.5681nm, and the maximum thickness under the action of compressive strain is 50 nm. Third N-type semiconductor layer In0.07Ga0.93As has lower electron ionization electric field and higher electron mobility compared with the fourth N-type semiconductor layer GaAs, and can accelerate the induction of the avalanche breakdown effect of the fourth N-type semiconductor layer GaAs layer. The forbidden band width of a PN junction depletion region can be increased to more than 2.0eV, the highest voltage bearing capacity is greatly improved, a thin film type device structure is adopted, the thickness of the device can be controlled within 3 micrometers, the thermal resistance is less than one tenth of 100 micrometers silicon, the upper limit of the bearable power is greatly improved, and the maximum power can reach the level of ten thousand watts.
The technical progress of embodiment 100 is realized by three: in order to further improve the high power characteristic of the TVS, it is necessary to enhance the heat conductivity of the TVS, i.e., to reduce the thermal resistance of the TVS. For the N- δ -p type TVS structure of embodiment 100, the device heat generation mainly comes from the fourth N type semiconductor layer GaAs of high resistance. In the heat transfer model, metal # 2 can be used as a heat sink, and the thermal resistance of the fourth N-type semiconductor layer GaAs to the second P-type metal electrode 108 is determined by the thickness and thermal conductivity of the fifth P-type semiconductor layer 106 and the sixth P-type semiconductor layer 107, following the following equation:
where K is the thermal conductivity of the semiconductor material, S is the diode cross-sectional area of the TVS, d5And d6The profile is the thickness of the fifth P-type semiconductor layer 106 and the sixth P-type semiconductor layer 107, the cumulative thickness of both layers being less than 1 μm; the substrate thickness is 100 μm compared to a silicon diode, although the thermal conductivity of silicon is 3 times that of GaAs material, i.e. silicon 1.4W-cmKGaAs is 0.54W-cmK(ii) a However, the substrate thickness of the silicon diode is 100 times thicker than the thin film type TVS of embodiment 100. Thermal conduction according to the 1 μm thin film diode thickness techniquethermal(GaAs) ═ 5400S; in contrast, thermal conductance C of a 100 μm thick silicon diodethermal(Si) 140S. As a final effect, the thin film TVS of example 100 has a thermal conductivity 30 times or more that of the silicon diode. The higher thermal conductivity means that the thin film TVS can withstand larger electrical surge power and longer electrical surge impact time.
As shown in fig. 4, yet another embodiment 200 of a thin film semiconductor tvs according to the present invention is shown. Based on example 100, in order to further compress the frequency response time of the transient diode, example 200 further reduces the capacitance of the diode by making an asymmetric capacitance structure (as shown in fig. 5(a) and 5 (b)). Partial areas of the fifth P-type semiconductor layer 206 and the sixth P-type semiconductor layer 207 are etched away, and the etching depth can be equal to the sum of the thicknesses of the fifth P-type semiconductor layer 206 and the sixth P-type semiconductor layer 207 through wet etching or plasma-assisted dry etching; the etched-out areas are filled with a highly thermally conductive insulating material 209. The thermally conductive insulating material 209 is preferably: silica, alumina or ceramic. In the TVS reverse operation state of the embodiment 200, the heterojunction formed by the second N-type semiconductor layer 203 and the fifth P-type semiconductor layer 206 becomes a plate capacitor. The effective area of the capacitor is the area corresponding to the fifth P-type semiconductor layer 206. The area ratio of the second N-type semiconductor layer 203 and the fifth P-type semiconductor layer 206 is defined as a finite area ratio β, which is obviously > 1. The capacitance being reduced to the original capacitance
And maintain the diode string of TVSThe resistance is unchanged. According to the equation (r), the RC time constant of the diode of the embodiment 200 will be reduced to the original constant
In engineering, beta can be less than 0.1, and the corresponding TVS frequency response is improved by one order of magnitude.
As shown in fig. 6, yet another embodiment 300 of a transient voltage suppressor diode of a thin film type semiconductor according to the present invention. In order to further enhance the thermal conductivity, a portion of the fourth N-type semiconductor layer 305 material not participating in the electrical conduction may be etched. The depth of the etch not exceeding the thickness of the fourth N-type 305 material
The etching can be realized by wet etching or by a plasma-assisted dry etching mode. Filled with a highly thermally conductive insulating material 310. The thermally conductive insulating material 310 is preferably: silica, alumina or ceramic.
The above embodiments are only preferred embodiments of the present invention, and are not intended to limit the technical solutions of the present invention. Without departing from the spirit of the invention, the present invention shall be deemed to fall within the scope of the claims of the present patent application by the following claims and their equivalents.
Claims (12)
1. A transient voltage suppressing diode of a thin film type semiconductor, characterized by comprising, in order:
a first N-type metal electrode formed on the substrate,
a first N-type semiconductor layer formed on the substrate,
a second N-type semiconductor layer formed on the substrate,
a third semiconductor layer formed on the first semiconductor layer,
a fourth semiconductor layer formed on the first semiconductor layer,
a fifth P-type semiconductor layer formed on the substrate,
a sixth P-type semiconductor layer, and,
a second P-type metal electrode; wherein the content of the first and second substances,
the first N-type semiconductor layer and the first N-type metal electrode form ohmic contact, and the first N-type semiconductor layer is a carrier providing layer;
the sixth P-type semiconductor layer and the second P-type metal electrode form ohmic contact, and the sixth P-type semiconductor layer is a carrier providing layer;
the second N-type semiconductor layer and the fifth P-type semiconductor layer form a heterojunction;
the third semiconductor layer and the fourth semiconductor layer are both high-resistance weak N-type semiconductors or high-resistance weak P-type semiconductors, and the free state lattice constant of the third semiconductor layer is not equal to that of the fourth semiconductor layer;
the third semiconductor layer is a strain layer and can induce the avalanche breakdown of the fourth semiconductor layer.
2. The thin film semiconductor transient voltage suppression diode of claim 1, wherein: the first N-type semiconductor layer mainly comprises GaAs and has a doping concentration of 5e18cm-3And 1e20cm-3In the thickness range of 200nm to 900nm, and the free-state lattice constant is 0.5653 nm.
3. The thin film semiconductor transient voltage suppression diode of claim 2, wherein: the second N-type semiconductor layer mainly comprises Al0.5ln0.5P, doping concentration equal to 2e18cm-3The thickness is 200 nm-500 nm, and the free state lattice constant is 0.5653 nm.
4. The transient voltage suppressing diode of a thin film type semiconductor according to claim 3, wherein: the third semiconductor layer has In as a main component0.07Ga0.93As, doping concentration of 1e16cm or less-3The thickness range is 5 nm-50 nm, and the lattice constant of the free state is 0.5681 nm.
5. The thin film semiconductor transient voltage suppression diode of claim 4, wherein: the first mentionedThe main component of the four semiconductor layers is GaAs, and the doping concentration is less than or equal to 1e16cm-3The thickness range is 1000 nm-10000 nm, and the free state lattice constant is 0.5653 nm.
6. The thin film semiconductor transient voltage suppression diode of claim 5, wherein: the fifth P-type semiconductor layer mainly comprises Ga0.5ln0.5P, doping concentration equal to 2e18cm-3The thickness range is 200 nm-1000 nm, and the free state lattice constant is 0.5653 nm.
7. The thin film semiconductor transient voltage suppression diode of claim 6, wherein: the sixth P-type semiconductor layer mainly comprises GaAs and has a doping concentration of 5e18cm-3And 1e20cm-3The thickness range is 200 nm-900 nm, and the free state lattice constant is 0.5653 nm.
8. The thin film semiconductor transient voltage suppression diode of claim 7, wherein: the first N-type metal electrode mainly comprises one or more of gold, palladium, silver, platinum, aluminum, indium, copper, nickel, titanium and germanium, and the thickness range of the first N-type metal electrode is 2-3 mu m.
9. The thin film semiconductor transient voltage suppression diode of claim 8, wherein: the second P-type metal electrode mainly comprises one or more of gold, palladium, silver, platinum, aluminum, indium, copper, nickel and titanium, and the thickness range of the second P-type metal electrode is 10-100 mu m.
10. The transient voltage suppressor diode of any one of claims 1 to 9, wherein: and partial areas of the fifth P-type semiconductor layer and the sixth P-type semiconductor layer are corroded to a depth equal to the sum of the thicknesses of the fifth P-type semiconductor layer and the sixth P-type semiconductor layer, and a heat-conducting insulating material is filled in the fifth P-type semiconductor layer and the sixth P-type semiconductor layer.
11. The thin film semiconductor transient voltage suppression diode of claim 10, wherein: the fourth semiconductor layer is partially etched to a depth not exceeding the thickness of the fourth semiconductor layer
And filled with a thermally conductive and insulating material.
12. The thin film semiconductor transient voltage suppression diode of claim 11, wherein: the thermally conductive and insulating material comprises silicon oxide, aluminum oxide or ceramic.
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