CN102127735A - Method for modifying metal baseband surface used for YBCO (YBa2Cu3O(7-x)) coating - Google Patents
Method for modifying metal baseband surface used for YBCO (YBa2Cu3O(7-x)) coating Download PDFInfo
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Abstract
The invention relates to a method for modifying a metal baseband surface used for YBCO (YBa2Cu3O(7-x)) coating, which comprises the following steps: placing a nickel tungsten alloy baseband into the cavity of vacuum evaporation equipment, vacuumizing to 5*10<-5> Pa, heating the nickel tungsten alloy baseband to, and keeping heating for 1 hour at the temperature of 450-650 DEG C and removing the impurity atoms adsorbed on the nickel tungsten alloy baseband; charging mixed gas of Ar gas and H2S gas into the vacuum cavity, and controlling the partial pressure of H2S gas at 55*10<-4> Pa; and heating the nickel tungsten alloy baseband to 700-800 DEG C at a heating rate of 20-40 DEC C/min, and holding the temperature for 10-20 minutes to obtain a nickel tungsten alloy baseband with a c (2*2) superstructure. A cerium dioxide film and an YBCO coating prepared on the nickel tungsten alloy baseband which is subjected to vulcanization surface treatment are completely c-axle oriented.
Description
Technical field
The present invention relates to a kind of metal base band surface-treated method, particularly be used for the method for finishing of the nickel-tungsten alloy base-band of YBCO coating.
Background technology
Superconducting material is because without hindrance, the perfect diamganetism physical property of its uniqueness owing to its huge applications prospect in fields such as industry, scientific research, medical science, make national governments very pay attention to the development research of superconductor technology.Therefore, superconductor technology has been considered to the new and high technology that 21 century has strategic importance.In numerous superconducting materials, NbTi, Nb
3Sn, Bi-2223, YBa
2Cu
3O
7-xAnd MgB
2Be five kinds of superconducting materials having used.NbTi, Nb
3Sn and MgB
2The critical transition temperature of superconducting material is a low temperature superconducting material all far below liquid nitrogen temperature 77K.The critical transition temperature of Bi-2223 and YBCO then is respectively 108K and 92K, belongs to high temperature superconducting materia.But Bi-2223 is at irreversible the H* (77K) of the 77K 02T that only has an appointment, and so little irreversible field has just hindered the application of Bi-2223 at 77K.And YBa
2Cu
3O
7-xIrreversible H* (77K) at 77K is about 3-5T, far above irreversible of Bi-2223, is first-selected high temperature superconducting materia in the present applied environment under the liquid nitrogen temperature high-intensity magnetic field.
YBa
2Cu
3O
7-x(YBCO) superconducting tape is made of metal alloy base band, Seed Layer, blocking layer, cap layer and rare earth barium copper oxide superconducting layer etc., is a kind of multilayered structure.Base band is the carrier of ybco film, uses for the ease of reeling, and generally all be ductility good metal strip.In the development of YBCO band, the YBCO superconducting layer that how to obtain having the biaxial texture characteristic is crucial.Around the source and the transmission of texturizing properties, the rolling auxiliary biaxial texture method that U.S.'s Oak Ridge National Laboratory proposes is one of two kinds of technology the most successful beyond doubt.Its principle is to force the crystal grain in the metal base band to be reset outside the face inner face by the rolling extruding of aximal deformation value, and the crystal grain that forms biaxial texture is arranged, and by high temperature annealing the biaxial texture characteristic of metal base band is further improved.Then, on alloy base band, deposit transition layer and superconducting layer successively.Therefore, the quality that forms of the texture of base band and the surface condition performance that directly determined final coating conductor.The patent of the at present domestic base band of using about the YBCO superconducting coating all is preparation methods of the nickel tungsten base band of report high W content.Chinese patent ZL 200610076274.4 has reported the method about the Ni-W base band for preparing high W content cubic texture.Chinese patent CN 101249607A has reported a kind of preparation method of coating superconductivity high W content Ni-W alloy baseband in (open day on August 27th, 2008).They adopt discharge plasma sintering and powder metallurgy isostatic pressing method to prepare Ni-W alloy original block respectively, then through the various rolling final nickel tungsten base band that prepared high W content.The rolling auxiliary biaxial texture method that these patents and U.S.'s Oak Ridge National Laboratory propose does not have essential distinction, has just improved the W content of nickel tungsten base band, and their texture situation does not only have to improve to decrease on the contrary.Therefore the texture of buffer layer for preparing on these high tungsten nickel-tungsten alloy base-bands and ybco film descends and then causes the superconductivity of whole coating conductor to descend.
Summary of the invention
The nickel-tungsten alloy base-band that the objective of the invention is to overcome prior art for preparing can not transmit the shortcoming of texture well to buffer layer, the method on the surface of the nickel-tungsten alloy base-band that a kind of YBCO of modification coating uses is provided.
The present invention forms the S superstructure of c (2 * 2) by the nickel tungsten base band of rolling auxiliary biaxial texture method preparation is carried out sulfidizing on the surface of nickel-tungsten alloy base-band, Zhi Bei buffer layer and superconducting layer has a better biaxial texture thereon.
The present invention selects for use hydrogen sulfide that nickel-tungsten alloy base-band is carried out sulfidizing, adopt the surface deposition last layer sulphur atom of method of evaporation, on the nickel-tungsten alloy base-band that sulfidizing is crossed, adopt the method for reaction radio-frequency sputtering to prepare the cerium dioxide transition layer then at nickel-tungsten alloy base-band.This sequence of process steps is as follows:
(1) at first nickel-tungsten alloy base-band is placed in the cavity of vacuum-evaporation appts, be evacuated to 5 * 10
-5Pa, heating nickel-tungsten alloy base-band to temperature is 450 ℃～650 ℃, and is 5 * 10 at air pressure
-5Pa, temperature is to continue heating nickel-tungsten alloy base-band one hour under 450 ℃～650 ℃ conditions, removes the impurity atoms that is adsorbed on the nickel-tungsten alloy base-band.
(2) in the cavity of evaporation equipment, fill Ar gas and H then
2The mixed gas of S gas is by adjusting H
2The ratio of S gas and Ar gas, control H
2The dividing potential drop of S gas is 5 * 10
-4Pa.Subsequently with the temperature rise rate of 20～40 ℃/min heating nickel-tungsten alloy base-band to 700～800 ℃, and be incubated 10～20min.
(3) with the rate of temperature fall of 20～40 ℃/min the cavity of vacuum-evaporation appts is cooled to room temperature, opens cavity, take out sample, obtain the nickel-tungsten alloy base-band of the S superstructure that the YBCO coating uses with c (2 * 2).
(4) depositing cerium dioxide film (CeO on the process nickel-tungsten alloy base-band of sulfidizing
2).
Nickel-tungsten alloy base-band is the Ni-5%W alloy base band in the described step (1).
The technology of described step (4) depositing cerium dioxide film is: the equipment depositing cerium dioxide film that adopts the reaction radio-frequency sputtering.At first in the reaction radio-frequency (RF) sputtering equipment pure cerium (Ce) target is installed, target-substrate distance is 30～40mm, is evacuated to 4.5 * 10
-4～1 * 10
-2Pa feeds argon gas and hydrogen in vacuum cavity, pre-deposition 5～10min under the mixed atmosphere of argon gas and hydrogen utilizes the reductibility of hydrogen the metallic surface to be cleaned and stoped the formation of NiO.Feed the mixed gas of argon gas, oxygen and water vapour subsequently in vacuum cavity, the operating air pressure of whole vacuum chamber is transferred to 1～100Pa, the dividing potential drop of water vapour is 3 * 10
-3～1 * 10
-3Pa with 15 ℃/min of temperature rise rate heating Ni-5%W alloy base band to 550～750 ℃, begins sputter then.Sputtering voltage is increased to 280V, and sputtering current is 0.5A, treat that aura is stable after, begin deposition, deposition 10～20min stops sputter subsequently, closes vacuum system, sedimentary CeO on the Ni-5%W alloy base band that obtains in sulfidizing
2Film.
The present invention modifies the nickel-tungsten alloy base-band of YBCO used for coating conductor by sulfidizing.Orderly four the nickle atom hollow positions that are filled in of sulphur atom that are deposited on the nickel tungsten surface have formed the S superstructure with c (2 * 2).S superstructure with c (2 * 2) has played very important effect to the forming core of oxide buffer layer on the Ni base band.On the one hand, the S superstructure of c (2 * 2) can well be complementary with Sauerstoffatom place (001) crystal face as template; On the other hand, element sulphur and oxygen element belong to the 6th main group, and similar chemical property is arranged.The S template that exists at nickel surface be easy to make oxonium ion the certain location deposition impel (00l) thus the forming core of epitaxial film makes CeO
2Transition layer has good biaxial texture.
Description of drawings
Fig. 1 is the CeO of comparative example 1 and the embodiment of the invention 1 preparation
2The scanning electron microscope picture of film; Wherein: Fig. 1 a is the CeO of comparative example preparation
2The stereoscan photograph of film, employed substrate are nickel (100) monocrystalline; Fig. 1 b is the CeO of the embodiment of the invention 1 preparation
2The stereoscan photograph of film, employed substrate are the Ni-5%W alloy base band of sulfidizing;
Fig. 2 is the CeO of comparative example 1 and the embodiment of the invention 1 preparation
2The X ray diffracting spectrum of film (XRD); Wherein: Fig. 2 a is the CeO of comparative example preparation
2The XRD figure of film, employed substrate are nickel (100) monocrystalline; Fig. 2 b is the CeO of embodiment preparation
2The XRD figure of film, employed substrate are the Ni-5%W alloy base band of sulfidizing;
Fig. 3 is the CeO of comparative example 1 and the embodiment of the invention 1 preparation
2X ray ф scanning and (111) utmost point figure of film; Wherein: Fig. 3 a is the CeO of comparative example preparation
2ф scanning and (111) utmost point figure of film, employed substrate is nickel (a 100) monocrystalline; Fig. 3 b is the CeO of embodiment preparation
2ф scanning and (111) utmost point figure of film, employed substrate is the Ni-5%W alloy base band of sulfidizing;
Fig. 4 is refletcion high-energy electron diffraction (RHEED) picture of comparative example 1 and the embodiment of the invention 1 employed substrate; Wherein: Fig. 4 a is the RHEED picture of nickel (100) monocrystalline, and Fig. 4 b is the RHEED picture of the Ni-5%W alloy base band of sulfidizing;
Fig. 5 is the CeO of the embodiment of the invention 2 preparations
2The XRD figure of film;
Fig. 6 is the CeO of the embodiment of the invention 3 preparations
2The XRD figure of film.
Embodiment
Embodiment 1
This implementation step is specific as follows:
(1) at first the Ni-5%W alloy base band is placed in the cavity of vacuum-evaporation appts, be evacuated to 5 * 10
-5Pa, heating Ni-5%W alloy base band to 550 ℃, and under this condition, continue heating Ni-5%W alloy base band one hour, the impurity atoms removing that is adsorbed on the Ni-5%W alloy base band;
(2) in vacuum cavity, fill Ar gas and H then
2The mixed gas of S gas, control H
2The dividing potential drop of S gas is 5 * 10
-4Pa.Subsequently with the temperature rise rate of 30 ℃/min heating Ni-5%W alloy base band to 750 ℃, and insulation 15min.Reduce to room temperature with the rate of temperature fall of 30 ℃/min then, take out the Ni-5%W alloy base band.
(3) the cavity of putting into the reaction radio-frequency (RF) sputtering equipment through the Ni-5%W alloy base band of above-mentioned two step sulfidizing, in the reaction radio-frequency (RF) sputtering equipment pure cerium (Ce) target is installed, target-substrate distance is 35mm, is evacuated to 2.5 * 10
-3Pa, the mixed gas of feeding argon gas and hydrogen in vacuum cavity, pre-deposition 8min under the atmosphere of argon gas and hydrogen.Utilize the reductibility of hydrogen Ni-5%W alloy base band surface to be cleaned and stoped the formation of NiO.Feed the mixed gas of argon gas, oxygen and water vapour subsequently in vacuum cavity, the operating air pressure of vacuum cavity is transferred to 5Pa, steam partial pressure is 2 * 10
-3Pa, the Ni-5%W alloy base band of handling with 15 ℃/min of temperature rise rate baking to 600 ℃, beginning sputter.Sputtering voltage is increased to 280V, and sputtering current is 0.5A.After treating that aura is stable, begin deposition, depositing time is 15min, stops sputter subsequently, closes vacuum system, sedimentary CeO on the Ni-5%W alloy base band that just obtains in sulfidizing
2Film.
Embodiment 2
(1) at first the Ni-5%W alloy base band is placed in the cavity of vacuum-evaporation appts, be evacuated to 5 * 10
-5Pa, heating Ni-5%W alloy base band to temperature is 450 ℃, and continues heating Ni-5%W alloy base band one hour under this condition, and the impurity atoms that is adsorbed on the Ni-5%W alloy base band is removed;
(2) in vacuum cavity, fill Ar gas and H then
2The mixed gas of S, control H
2The dividing potential drop of S gas is 5 * 10
-4Pa.Subsequently with the temperature rise rate of 20 ℃/min heating Ni-5%W alloy base band to 700 ℃, and insulation 10min.Reduce to room temperature with the rate of temperature fall of 20 ℃/min then, take out the Ni-5%W alloy base band.
(3) the cavity of putting into the reaction radio-frequency (RF) sputtering equipment through the Ni-5%W alloy base band of above-mentioned two step sulfidizing, in the reaction radio-frequency (RF) sputtering equipment pure cerium (Ce) target is installed, target-substrate distance is 30mm, is evacuated to 4.5 * 10
-4Pa feeds the mixed gas of argon gas and hydrogen in vacuum cavity, pre-deposition 5min under the atmosphere of argon gas and hydrogen utilizes the reductibility of hydrogen the metallic surface to be cleaned and stoped the formation of NiO.Feed the mixed gas of argon gas, oxygen and water vapour subsequently in vacuum cavity, the operating air pressure of vacuum cavity is transferred to 1Pa, steam partial pressure is 1 * 10
-3Pa, the Ni-5%W alloy base band of handling with 15 ℃/min of temperature rise rate baking to 550 ℃, beginning sputter.Sputtering voltage is increased to 280V, and sputtering current is 0.5A.After treating that aura is stable, begin deposition, depositing time is 10min, stops sputter subsequently, closes vacuum system, sedimentary CeO on the Ni-5%W alloy base band that just obtains in sulfidizing
2Film.
Embodiment 3
(1) at first the Ni-5%W alloy base band is placed in the cavity of vacuum-evaporation appts, be evacuated to 5 * 10
-5Pa, heating Ni-5%W alloy base band to temperature is 650 ℃, and continues heating Ni-5%W alloy base band one hour under this condition, and the impurity atoms that is adsorbed on the Ni-5%W alloy base band is removed;
(2) in vacuum cavity, fill Ar gas and H then
2The mixed gas of S, control H
2The dividing potential drop of S gas is 5 * 10
-4Pa.Subsequently with the temperature rise rate of 40 ℃/min heating Ni-5%W alloy base band to 800 ℃, and insulation 20min.Reduce to room temperature with the rate of temperature fall of 40 ℃/min then, take out the Ni-5%W alloy base band.
(3) the cavity of putting into the reaction radio-frequency (RF) sputtering equipment through the Ni-5%W alloy base band of above-mentioned two step sulfidizing, in the reaction radio-frequency (RF) sputtering equipment pure cerium (Ce) target is installed, target-substrate distance is 35mm, is evacuated to 1.0 * 10
-2Pa feeds the mixed gas of argon gas and hydrogen in vacuum cavity, pre-deposition 10min under the atmosphere of argon gas and hydrogen utilizes the reductibility of hydrogen the metallic surface to be cleaned and stoped the formation of NiO.Feed the mixed gas of argon gas, oxygen and water vapour subsequently in vacuum cavity, the operating air pressure of vacuum cavity is transferred to 100Pa, steam partial pressure is 3 * 10
-3Pa, the Ni-5%W alloy base band of handling with 15 ℃/min of heat-up rate baking to 750 ℃, beginning sputter.Sputtering voltage is increased to 280V, and sputtering current is 0.5A, treat that aura is stable after, begin deposition, depositing time is 20min, stops sputter subsequently, closes vacuum system, sedimentary CeO on the Ni-5%W alloy base band that just obtains in sulfidizing
2Film.
Comparative example 1
Compare with embodiment 1, Ni (100) monocrystalline that comparative example 1 adopts, other processing condition are identical with embodiment 1.
Fig. 1 a is the CeO of comparative example 1 preparation
2The stereoscan photograph of film, the sample surfaces particle for preparing on nickel (100) monocrystalline matrix is fewer, very discontinuous as can be seen, and there is tangible crackle on the surface.And the CeO that on the base band of sulfidizing, prepares
2The very smooth densification of film surface is shown in Fig. 1 b.
Fig. 2 a is the CeO of comparative example 1 preparation
2The XRD of film.The sample for preparing on nickel (100) monocrystalline is about the corresponding CeO of diffraction peak difference of 28.54 °, 33.07 ° and 59.078 ° appearance at 2 θ
2(111), (200) and (222) peak, the CeO for preparing on nickel (100) monocrystalline is described
2CeO is arranged in the process
2(111) and CeO
2The crystal grain of (200) two kinds of orientations is forming core and growing up simultaneously, is not to be c axle oriented growth.And the CeO that on the base band of sulfidizing, prepares
2Be fully that { 001} orientation does not have other diffraction peaks, is highly suitable for CeO
2Preparation has the YBCO superconducting thin film of c axle orientation above the film, shown in Fig. 2 b.
Fig. 3 a is the CeO of comparative example 1 preparation
2The ф of film scanning and (111) utmost point figure, the sample that on nickel (100) monocrystalline matrix, prepares be separated by except four 90 ° diffraction peak in addition the faint peak that do not wait of four intensity appear in the collection of illustrative plates.Its utmost point figure then show except 4 apparent in view spots be CeO
2The diffraction peak of (00l), also have the spot of a lot of satellite points and broadening phenomenon, the CeO for preparing under this condition is described
2Grain orientation in the film is more mixed and disorderly.And the CeO that on the Ni-5%W of sulfidizing alloy base band, prepares
2The CeO of film
2(111) face is concentric ring-shaped and distributes wherein 4 significantly, is CeO without any the spot of satellite point or broadening phenomenon
2The diffraction peak of (00l), show CeO
2Film is c axle orientation fully, shown in Fig. 3 b.
Fig. 4 is the Ni-5%W alloy base band of electron beam sulfidizing of (100) irradiation along the crystal orientation and the RHEED pattern of nickel (100) monocrystalline.Can observe striped significantly from pattern, it is more orderly that the interpret sample surface atom is arranged, and sample surfaces is very smooth (planeness of Ni-monocrystal is than Ni-5%W alloy base band nickel-base strip height, and its diffraction fringe is also more clear).Compare with the RHEED pattern of Ni-monocrystal Fig. 4 a, many two stripe of Ni-5%W alloy base band RHEED pattern are shown in arrow among Fig. 4 b.And these two diffraction fringes are exactly in the centre of Ni diffraction fringe.Electron beam along the crystal orientation＜110〉irradiation the RHEED pattern of nickel (100) monocrystalline then do not have this two diffraction fringes.Can illustrate that based on the above results Ni-5%W alloy base band surface exists the S superstructure of c (2 * 2).At the feasible CeO that is deposited on of the S superstructure of the c (2 * 2) that vulcanizes the base band existence
2Film has good biaxial texture.
Fig. 5 and Fig. 6 are the CeO of embodiment 2 and embodiment 3 preparations
2The XRD of film, CeO
2Have only that { diffraction peak of 001} orientation does not have other diffraction peaks, is c axle orientation fully.
Claims (2)
1. a method of modifying the YBCO coating with the metal base band surface is characterized in that described method selects for use hydrogen sulfide that nickel-tungsten alloy base-band is carried out sulfidizing, and the processing step of described sulfidizing is as follows:
(1) at first described nickel-tungsten alloy base-band is placed in the cavity of vacuum-evaporation appts, be evacuated to 5 * 10
-5Pa, heating described nickel-tungsten alloy base-band to temperature is 450 ℃～650 ℃, and is 5 * 10 at air pressure
-5Pa, temperature are to continue heating one hour under 450 ℃～650 ℃ the condition, remove the impurity atoms that is adsorbed on described nickel-tungsten alloy base-band;
(2) in the cavity of vacuum-evaporation appts, fill Ar gas and H then
2The mixed gas of S gas, control H
2The dividing potential drop of S gas is 5 * 10
-4Pa; Heat described nickel-tungsten alloy base-band to 700～800 ℃ with the temperature rise rate of 20～40 ℃/min subsequently, and be incubated 10～20min;
(3) with the rate of temperature fall of 20～40 ℃/min the cavity of vacuum-evaporation appts is cooled to room temperature, opens described cavity, take out sample, obtain the nickel-tungsten alloy base-band of the S superstructure that the YBCO coating uses with c (2 * 2).
2. modification YBCO coating according to claim 1 is characterized in that with the method on metal base band surface described nickel-tungsten alloy base-band is the Ni-5%W alloy base band.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104890315A (en) * | 2015-05-11 | 2015-09-09 | 河南师范大学 | High-intensity texture copper-nickel/nickel-tungsten alloy double-layered composite base band and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101109063A (en) * | 2007-09-05 | 2008-01-23 | 西北有色金属研究院 | Modifying processing method of vulcanizing surface of metallic base band for coating conductor |
| WO2009096931A1 (en) * | 2008-01-28 | 2009-08-06 | Amit Goyal | Semiconductor-based large-area flexible electronic devices |
| CN102154611A (en) * | 2011-03-09 | 2011-08-17 | 西北有色金属研究院 | Method for performing vulcanizing modification on surface of NiW alloy base band |
-
2011
- 2011-02-21 CN CN2011100409096A patent/CN102127735A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101109063A (en) * | 2007-09-05 | 2008-01-23 | 西北有色金属研究院 | Modifying processing method of vulcanizing surface of metallic base band for coating conductor |
| WO2009096931A1 (en) * | 2008-01-28 | 2009-08-06 | Amit Goyal | Semiconductor-based large-area flexible electronic devices |
| CN102154611A (en) * | 2011-03-09 | 2011-08-17 | 西北有色金属研究院 | Method for performing vulcanizing modification on surface of NiW alloy base band |
Non-Patent Citations (2)
| Title |
|---|
| 《JOURNAL OF MATERIALS RESEARCH》 20130521 C. Cantoni等 Quantification and control of the sulfur c(2×2) superstructure on {100} Ni for optimization of YSZ, CeO2, and SrTiO3 seed layer texture 2552页左栏第10行至倒数第14行 1-2 第17卷, 第10期 * |
| C. CANTONI等: "Quantification and control of the sulfur c(2×2) superstructure on {100}<100> Ni for optimization of YSZ, CeO2, and SrTiO3 seed layer texture", 《JOURNAL OF MATERIALS RESEARCH》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104890315A (en) * | 2015-05-11 | 2015-09-09 | 河南师范大学 | High-intensity texture copper-nickel/nickel-tungsten alloy double-layered composite base band and preparation method thereof |
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Application publication date: 20110720 |