JP6067532B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6067532B2
JP6067532B2 JP2013212623A JP2013212623A JP6067532B2 JP 6067532 B2 JP6067532 B2 JP 6067532B2 JP 2013212623 A JP2013212623 A JP 2013212623A JP 2013212623 A JP2013212623 A JP 2013212623A JP 6067532 B2 JP6067532 B2 JP 6067532B2
Authority
JP
Japan
Prior art keywords
film
insulating film
layer
semiconductor layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013212623A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014072533A5 (enExample
JP2014072533A (ja
Inventor
金子　健太郎
健太郎 金子
俊実 人羅
俊実 人羅
平尾　孝
孝 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Flosfia Inc
Original Assignee
Flosfia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flosfia Inc filed Critical Flosfia Inc
Priority to JP2013212623A priority Critical patent/JP6067532B2/ja
Publication of JP2014072533A publication Critical patent/JP2014072533A/ja
Publication of JP2014072533A5 publication Critical patent/JP2014072533A5/ja
Application granted granted Critical
Publication of JP6067532B2 publication Critical patent/JP6067532B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2013212623A 2013-10-10 2013-10-10 半導体装置 Active JP6067532B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013212623A JP6067532B2 (ja) 2013-10-10 2013-10-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013212623A JP6067532B2 (ja) 2013-10-10 2013-10-10 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013131172A Division JP5397795B1 (ja) 2013-06-21 2013-06-21 半導体装置及びその製造方法、結晶及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016247779A Division JP6281145B2 (ja) 2016-12-21 2016-12-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2014072533A JP2014072533A (ja) 2014-04-21
JP2014072533A5 JP2014072533A5 (enExample) 2015-10-08
JP6067532B2 true JP6067532B2 (ja) 2017-01-25

Family

ID=50747411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013212623A Active JP6067532B2 (ja) 2013-10-10 2013-10-10 半導体装置

Country Status (1)

Country Link
JP (1) JP6067532B2 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9590050B2 (en) * 2014-05-08 2017-03-07 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
JP6230196B2 (ja) * 2014-07-08 2017-11-15 株式会社Flosfia 結晶性半導体膜および半導体装置
JP6281146B2 (ja) 2014-07-22 2018-02-21 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
JP6390052B2 (ja) * 2014-08-29 2018-09-19 高知県公立大学法人 量子井戸構造および半導体装置
JP2016051824A (ja) * 2014-08-29 2016-04-11 高知県公立大学法人 エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法
CN106796891B (zh) 2014-09-02 2020-07-17 株式会社Flosfia 层叠结构体及其制造方法、半导体装置、以及晶体膜
JP6478425B2 (ja) * 2017-07-07 2019-03-06 株式会社Flosfia 結晶性半導体膜および半導体装置
CN109423694B (zh) 2017-08-21 2022-09-09 株式会社Flosfia 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法
CN112368429A (zh) 2018-06-26 2021-02-12 株式会社Flosfia 成膜方法及结晶性层叠结构体
JP7741487B2 (ja) 2018-06-26 2025-09-18 株式会社Flosfia 結晶性酸化物膜
JP7315136B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物半導体
JP7315137B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物膜
JP7124207B2 (ja) 2019-03-28 2022-08-23 日本碍子株式会社 下地基板
JP7176099B2 (ja) * 2019-03-28 2022-11-21 日本碍子株式会社 半導体膜
WO2020194803A1 (ja) 2019-03-28 2020-10-01 日本碍子株式会社 下地基板及びその製造方法
EP3960915A4 (en) 2019-04-24 2022-12-21 NGK Insulators, Ltd. SEMICONDUCTOR FILM
EP3960914A4 (en) 2019-04-24 2022-12-28 NGK Insulators, Ltd. Semiconductor film
WO2021044489A1 (ja) 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN114270531A (zh) 2019-09-03 2022-04-01 株式会社Flosfia 结晶膜、包含结晶膜的半导体装置以及结晶膜的制造方法
WO2021048950A1 (ja) 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
KR102849602B1 (ko) 2019-09-30 2025-08-21 가부시키가이샤 플로스피아 적층 구조체 및 반도체 장치
JP7290740B2 (ja) 2019-09-30 2023-06-13 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
CN114503285A (zh) * 2019-10-03 2022-05-13 株式会社Flosfia 半导体元件
CN114585776B (zh) 2019-11-05 2025-06-03 日本碍子株式会社 氧化镓结晶的制法
WO2021153609A1 (ja) 2020-01-27 2021-08-05 株式会社Flosfia 半導体装置および半導体装置の製造方法
US11694894B2 (en) 2020-04-24 2023-07-04 Flosfia Inc. Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure
US11804519B2 (en) 2020-04-24 2023-10-31 Flosfia Inc. Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure
JP7061214B2 (ja) * 2020-08-06 2022-04-27 信越化学工業株式会社 半導体積層体、半導体素子および半導体素子の製造方法
KR20230048008A (ko) * 2020-08-06 2023-04-10 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 적층체, 반도체 소자 및 반도체 소자의 제조방법
JP7681039B2 (ja) 2020-10-08 2025-05-21 日本碍子株式会社 酸化ガリウム単結晶粒子及びその製法
US20230074175A1 (en) * 2021-09-09 2023-03-09 The Regents Of The University Of Michigan Doped Aluminum-Alloyed Gallium Oxide And Ohmic Contacts
KR20240063901A (ko) 2021-09-22 2024-05-10 신에쓰 가가꾸 고교 가부시끼가이샤 성막방법, 성막장치 및 결정성 산화물막
EP4411021A1 (en) 2021-09-30 2024-08-07 Shin-Etsu Chemical Co., Ltd. Laminated structure, semiconductor device, and method for forming crystalline oxide film
JPWO2023238587A1 (enExample) 2022-06-08 2023-12-14
US12402381B2 (en) 2022-07-12 2025-08-26 Flosfia, Inc. Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083396B2 (ja) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 紫外透明導電膜とその製造方法
US8569754B2 (en) * 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same

Also Published As

Publication number Publication date
JP2014072533A (ja) 2014-04-21

Similar Documents

Publication Publication Date Title
JP6067532B2 (ja) 半導体装置
JP5343224B1 (ja) 半導体装置および結晶
JP5397795B1 (ja) 半導体装置及びその製造方法、結晶及びその製造方法
JP5528612B1 (ja) 半導体装置
JP5311765B2 (ja) 半導体エピタキシャル結晶基板およびその製造方法
US9752255B2 (en) Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material
US20100178234A1 (en) Multilayer substrate and method for producing the same, diamond film and method for producing the same
JP7078947B2 (ja) ダイヤモンド製膜用下地基板及びそれを用いたダイヤモンド基板の製造方法
JP2016081946A (ja) 半導体構造および半導体装置
CN105734530A (zh) 在石墨烯上基于磁控溅射氮化铝的氮化镓生长方法
EP2296169B1 (en) Method for manufacturing nitrogen compound semiconductor substrate, nitrogen compound semiconductor substrate, method for manufacturing single crystal sic substrate, and single crystal sic substrate
JP6281145B2 (ja) 半導体装置
JP7176099B2 (ja) 半導体膜
WO2022181163A1 (ja) 窒化物半導体基板およびその製造方法
CN105140106B (zh) 一种在零偏角衬底上外延碳化硅的方法
CN118660994A (zh) 衬底基板及单晶金刚石层叠基板以及它们的制造方法
Shin et al. Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si (1 0 0) substrates
Jayaprasad et al. Radical enhanced growth of GaN on Si with the buffer layer of GaN at a low temperature of 600° C
JP4595592B2 (ja) 単結晶成長方法
TWI876488B (zh) 形成石墨烯層結構的方法及石墨烯基板
Sun et al. GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications
KR20240100360A (ko) 하지기판 및 단결정 다이아몬드 적층기판 그리고 그들의 제조방법
KR20250058009A (ko) 베이스 기판 및 단결정 다이아몬드 적층 기판 그리고 그들의 제조 방법
Kwon et al. The Influence of AlN Buffer Layer Thickness on the Growth of GaN on a Si (111) Substrate with an Ultrathin Al Layer
JP2012124530A (ja) 半導体エピタキシャル結晶基板及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150824

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150824

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160719

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160809

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161122

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161221

R150 Certificate of patent or registration of utility model

Ref document number: 6067532

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250