JP2015025200A5 - 酸化物半導体膜 - Google Patents

酸化物半導体膜 Download PDF

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JP2015025200A5
JP2015025200A5 JP2014123974A JP2014123974A JP2015025200A5 JP 2015025200 A5 JP2015025200 A5 JP 2015025200A5 JP 2014123974 A JP2014123974 A JP 2014123974A JP 2014123974 A JP2014123974 A JP 2014123974A JP 2015025200 A5 JP2015025200 A5 JP 2015025200A5
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oxide semiconductor
semiconductor film
oxides
crystalline
planar
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  1. 基板上の酸化物半導体膜であって、
    前記酸化物半導体膜は、複数の平板状の結晶性Ｉｎ−Ｇａ−Ｚｎ酸化物を有し、
    前記複数の平板状の結晶性Ｉｎ−Ｇａ−Ｚｎ酸化物は、それぞれの厚さが０．５ｎｍ以上０．９ｎｍ以下であり、
    前記複数の平板状の結晶性Ｉｎ−Ｇａ−Ｚｎ酸化物は、それぞれの向きが不規則に配置されており、
    透過型電子顕微鏡によって、結晶粒界が確認されないことを特徴とする酸化物半導体膜。
JP2014123974A 2013-06-19 2014-06-17 酸化物半導体膜およびその作製方法 Withdrawn JP2015025200A (ja)

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JP2014123974A JP2015025200A (ja) 2013-06-19 2014-06-17 酸化物半導体膜およびその作製方法

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JP2013128481 2013-06-19
JP2013128481 2013-06-19
JP2014123974A JP2015025200A (ja) 2013-06-19 2014-06-17 酸化物半導体膜およびその作製方法

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JP2015025200A5 true JP2015025200A5 (ja) 2017-07-20

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US (2) US9287352B2 (ja)
JP (1) JP2015025200A (ja)
CN (1) CN105324509A (ja)
TW (1) TWI652822B (ja)
WO (1) WO2014203984A1 (ja)

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