JP2016100592A5 - - Google Patents
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- Publication number
- JP2016100592A5 JP2016100592A5 JP2014239389A JP2014239389A JP2016100592A5 JP 2016100592 A5 JP2016100592 A5 JP 2016100592A5 JP 2014239389 A JP2014239389 A JP 2014239389A JP 2014239389 A JP2014239389 A JP 2014239389A JP 2016100592 A5 JP2016100592 A5 JP 2016100592A5
- Authority
- JP
- Japan
- Prior art keywords
- crystalline
- layer
- structure according
- convex portion
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 239000010431 corundum Substances 0.000 claims 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 2
- 239000003595 mist Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 238000002109 crystal growth method Methods 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014239389A JP6945119B2 (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014239389A JP6945119B2 (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016100592A JP2016100592A (ja) | 2016-05-30 |
| JP2016100592A5 true JP2016100592A5 (enExample) | 2018-02-15 |
| JP6945119B2 JP6945119B2 (ja) | 2021-10-06 |
Family
ID=56077569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014239389A Active JP6945119B2 (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6945119B2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI764930B (zh) * | 2016-09-22 | 2022-05-21 | 英商Ｉｑｅ有限公司 | 集成外延金屬電極 |
| CN109423693B (zh) * | 2017-08-21 | 2022-09-09 | 株式会社Flosfia | 用于制造结晶膜的方法 |
| JP2020001997A (ja) * | 2017-08-21 | 2020-01-09 | 株式会社Flosfia | 結晶膜の製造方法 |
| CN109423690B (zh) * | 2017-08-21 | 2022-09-16 | 株式会社Flosfia | 用于制造结晶膜的方法 |
| WO2020004250A1 (ja) | 2018-06-26 | 2020-01-02 | 株式会社Flosfia | 結晶性酸化物膜 |
| WO2020004249A1 (ja) * | 2018-06-26 | 2020-01-02 | 株式会社Flosfia | 成膜方法および結晶性積層構造体 |
| JP6909191B2 (ja) | 2018-09-27 | 2021-07-28 | 信越化学工業株式会社 | 積層体、半導体装置及び積層体の製造方法 |
| JP7315136B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
| JP7315137B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
| JP2020186153A (ja) | 2019-05-15 | 2020-11-19 | トヨタ自動車株式会社 | 半導体層の成長方法、半導体装置の製造方法、及び、バルク結晶の製造方法 |
| JPWO2021044845A1 (enExample) | 2019-09-03 | 2021-03-11 | ||
| TWI850473B (zh) * | 2019-09-30 | 2024-08-01 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 積層結構體及半導體裝置 |
| CN114423883B (zh) | 2019-09-30 | 2024-03-12 | 日本碍子株式会社 | α－Ga2O3系半导体膜 |
| JP7453609B2 (ja) * | 2019-11-19 | 2024-03-21 | 株式会社Flosfia | 剥離方法および結晶性酸化物膜の製造方法 |
| JP7510123B2 (ja) * | 2020-01-27 | 2024-07-03 | 株式会社Flosfia | 半導体装置 |
| EP4098781A4 (en) | 2020-01-27 | 2024-05-15 | Flosfia Inc. | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
| JP7649944B2 (ja) * | 2020-04-24 | 2025-03-24 | 株式会社Flosfia | 結晶性積層構造体の製造方法 |
| US11804519B2 (en) | 2020-04-24 | 2023-10-31 | Flosfia Inc. | Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure |
| US11694894B2 (en) | 2020-04-24 | 2023-07-04 | Flosfia Inc. | Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure |
| JP7731995B2 (ja) | 2021-09-22 | 2025-09-01 | 信越化学工業株式会社 | 成膜方法及び成膜装置 |
| EP4539108A1 (en) | 2022-06-08 | 2025-04-16 | Shin-Etsu Chemical Co., Ltd. | Film formation method and film formation device |
| KR102675554B1 (ko) * | 2022-06-29 | 2024-06-14 | 웨이브로드 주식회사 | 그룹3족 질화물 반도체 소자용 템플릿 |
| US12402381B2 (en) | 2022-07-12 | 2025-08-26 | Flosfia, Inc. | Semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000231122A (ja) * | 1999-02-12 | 2000-08-22 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
| KR101038069B1 (ko) * | 2006-04-25 | 2011-06-01 | 내셔널 유니버시티 오브 싱가포르 | 에피택셜 측방향 과도성장 질화갈륨 템플릿 상에 성장된 산화아연막의 방법 |
| DE102010011895B4 (de) * | 2010-03-18 | 2013-07-25 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate |
| KR101932576B1 (ko) * | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US8569754B2 (en) * | 2010-11-05 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8809852B2 (en) * | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
| US20140217471A1 (en) * | 2011-09-08 | 2014-08-07 | National Institute of Information and Communicatio ns Technology | Ga2O3 SEMICONDUCTOR ELEMENT |
| JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
-
2014
- 2014-11-26 JP JP2014239389A patent/JP6945119B2/ja active Active
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