JP2015065233A5 - - Google Patents

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Publication number
JP2015065233A5
JP2015065233A5 JP2013197261A JP2013197261A JP2015065233A5 JP 2015065233 A5 JP2015065233 A5 JP 2015065233A5 JP 2013197261 A JP2013197261 A JP 2013197261A JP 2013197261 A JP2013197261 A JP 2013197261A JP 2015065233 A5 JP2015065233 A5 JP 2015065233A5
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JP
Japan
Prior art keywords
substrate
buffer layer
semiconductor device
main surface
transistor
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JP2013197261A
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English (en)
Japanese (ja)
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JP2015065233A (ja
JP6156015B2 (ja
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Priority claimed from JP2013197261A external-priority patent/JP6156015B2/ja
Priority to JP2013197261A priority Critical patent/JP6156015B2/ja
Priority to US14/295,532 priority patent/US9117896B2/en
Priority to DE102014213565.6A priority patent/DE102014213565B4/de
Priority to KR1020140118362A priority patent/KR101561519B1/ko
Priority to CN201410489794.2A priority patent/CN104465770A/zh
Publication of JP2015065233A publication Critical patent/JP2015065233A/ja
Publication of JP2015065233A5 publication Critical patent/JP2015065233A5/ja
Publication of JP6156015B2 publication Critical patent/JP6156015B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013197261A 2013-09-24 2013-09-24 半導体装置及びその製造方法 Active JP6156015B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013197261A JP6156015B2 (ja) 2013-09-24 2013-09-24 半導体装置及びその製造方法
US14/295,532 US9117896B2 (en) 2013-09-24 2014-06-04 Semiconductor device with improved conductivity
DE102014213565.6A DE102014213565B4 (de) 2013-09-24 2014-07-11 Halbleitervorrichtung und Verfahren zur Herstellung derselben
KR1020140118362A KR101561519B1 (ko) 2013-09-24 2014-09-05 반도체장치 및 그 제조방법
CN201410489794.2A CN104465770A (zh) 2013-09-24 2014-09-23 半导体装置以及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013197261A JP6156015B2 (ja) 2013-09-24 2013-09-24 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015065233A JP2015065233A (ja) 2015-04-09
JP2015065233A5 true JP2015065233A5 (enExample) 2016-09-01
JP6156015B2 JP6156015B2 (ja) 2017-07-05

Family

ID=52623790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013197261A Active JP6156015B2 (ja) 2013-09-24 2013-09-24 半導体装置及びその製造方法

Country Status (5)

Country Link
US (1) US9117896B2 (enExample)
JP (1) JP6156015B2 (enExample)
KR (1) KR101561519B1 (enExample)
CN (1) CN104465770A (enExample)
DE (1) DE102014213565B4 (enExample)

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Publication number Priority date Publication date Assignee Title
DE102016200825A1 (de) * 2016-01-21 2017-07-27 Robert Bosch Gmbh Vorrichtung und Verfahren zur Herstellung eines lateralen HEMTs
US10128364B2 (en) * 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
CN108713253A (zh) * 2016-04-01 2018-10-26 英特尔公司 用于改善的热和rf性能的具有底部填充氮化铝的氮化镓晶体管
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
CN106783993B (zh) * 2017-01-18 2019-08-02 电子科技大学 具有衬底内复合介质层结构的氮化镓异质结场效应管
US11038031B2 (en) * 2017-09-01 2021-06-15 Mitsubishi Electric Corporation Field-effect transistor
WO2019150526A1 (ja) * 2018-02-01 2019-08-08 三菱電機株式会社 半導体装置およびその製造方法
JP7137947B2 (ja) * 2018-03-22 2022-09-15 ローム株式会社 窒化物半導体装置
US11158575B2 (en) 2018-06-05 2021-10-26 Macom Technology Solutions Holdings, Inc. Parasitic capacitance reduction in GaN-on-silicon devices
US11482464B2 (en) * 2018-06-28 2022-10-25 Mitsubishi Electric Corporation Semiconductor device including a diamond substrate and method of manufacturing the semiconductor device
JP7248410B2 (ja) 2018-11-01 2023-03-29 エア・ウォーター株式会社 化合物半導体装置、化合物半導体基板、および化合物半導体装置の製造方法
JP7091555B2 (ja) * 2019-04-01 2022-06-27 ヌヴォトンテクノロジージャパン株式会社 電力増幅装置
DE112019007477T5 (de) * 2019-06-18 2022-03-10 Mitsubishi Electric Corporation Halbleitereinheit und herstelungsverfahren für eine halbleitereinheit
CN116868334A (zh) * 2021-02-26 2023-10-10 华为技术有限公司 一种半导体器件、电子设备及半导体器件的制备方法
JP7632074B2 (ja) * 2021-05-24 2025-02-19 富士通株式会社 半導体装置及び半導体装置の製造方法
US12400927B2 (en) * 2022-06-22 2025-08-26 Globalfoundries U.S. Inc. High-mobility-electron transistors having heat dissipating structures

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274174A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 高周波半導体装置
JP2005243727A (ja) 2004-02-24 2005-09-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5383059B2 (ja) 2008-02-26 2014-01-08 ローム株式会社 電界効果トランジスタ
JP5396784B2 (ja) 2008-09-09 2014-01-22 日本電気株式会社 半導体装置及びその製造方法
JP5487590B2 (ja) * 2008-10-20 2014-05-07 富士通株式会社 半導体装置及びその製造方法
JP2011060912A (ja) * 2009-09-08 2011-03-24 Toshiba Corp 半導体装置
JP5707786B2 (ja) * 2010-08-31 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
US8835986B2 (en) * 2011-06-22 2014-09-16 Imec Method for fabrication of III-nitride device and the III-nitride device thereof
JP5629714B2 (ja) 2012-03-19 2014-11-26 トヨタ自動車株式会社 半導体装置
KR101922123B1 (ko) * 2012-09-28 2018-11-26 삼성전자주식회사 반도체소자 및 그 제조방법

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