JP2014093526A5 - - Google Patents
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- Publication number
- JP2014093526A5 JP2014093526A5 JP2013225125A JP2013225125A JP2014093526A5 JP 2014093526 A5 JP2014093526 A5 JP 2014093526A5 JP 2013225125 A JP2013225125 A JP 2013225125A JP 2013225125 A JP2013225125 A JP 2013225125A JP 2014093526 A5 JP2014093526 A5 JP 2014093526A5
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial
- epitaxial layer
- wafer according
- epitaxial wafer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims 3
- 230000007547 defect Effects 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120122005A KR20140055336A (ko) | 2012-10-31 | 2012-10-31 | 에피택셜 웨이퍼 및 그 제조 방법 |
| KR10-2012-0122005 | 2012-10-31 | ||
| KR10-2012-0137988 | 2012-11-30 | ||
| KR1020120137988A KR20140070015A (ko) | 2012-11-30 | 2012-11-30 | 에피택셜 웨이퍼 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014093526A JP2014093526A (ja) | 2014-05-19 |
| JP2014093526A5 true JP2014093526A5 (enExample) | 2016-12-15 |
Family
ID=49488507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013225125A Pending JP2014093526A (ja) | 2012-10-31 | 2013-10-30 | エピタキシャルウエハ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140117381A1 (enExample) |
| EP (1) | EP2728609B1 (enExample) |
| JP (1) | JP2014093526A (enExample) |
| CN (1) | CN103789822A (enExample) |
| TW (1) | TW201417149A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201417150A (zh) * | 2012-10-31 | 2014-05-01 | Lg Innotek Co Ltd | 磊晶晶圓 |
| JP6149931B2 (ja) * | 2013-07-09 | 2017-06-21 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
| WO2016017502A1 (ja) * | 2014-08-01 | 2016-02-04 | 住友電気工業株式会社 | エピタキシャルウエハおよびその製造方法 |
| CN106715767A (zh) * | 2014-10-01 | 2017-05-24 | 住友电气工业株式会社 | 碳化硅外延基板 |
| KR102136000B1 (ko) * | 2015-02-18 | 2020-07-20 | 쇼와 덴코 가부시키가이샤 | 에피택셜 탄화 규소 단결정 웨이퍼의 제조 방법 및 에피택셜 탄화 규소 단결정 웨이퍼 |
| US9576894B2 (en) * | 2015-06-03 | 2017-02-21 | GlobalFoundries, Inc. | Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same |
| JP6468291B2 (ja) * | 2015-09-11 | 2019-02-13 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
| JP6641814B2 (ja) * | 2015-09-11 | 2020-02-05 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| CN105914272B (zh) * | 2016-05-19 | 2018-10-02 | 芜湖德豪润达光电科技有限公司 | 一种发光二极管外延片及其制备方法 |
| US10192980B2 (en) | 2016-06-24 | 2019-01-29 | Cree, Inc. | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
| US11430882B2 (en) | 2016-06-24 | 2022-08-30 | Wolfspeed, Inc. | Gallium nitride high-electron mobility transistors with p-type layers and process for making the same |
| US12484244B2 (en) | 2016-06-24 | 2025-11-25 | Wolfspeed, Inc. | Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same |
| US10892356B2 (en) | 2016-06-24 | 2021-01-12 | Cree, Inc. | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
| US10840334B2 (en) | 2016-06-24 | 2020-11-17 | Cree, Inc. | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
| JP6973600B2 (ja) * | 2019-12-24 | 2021-12-01 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP6791348B2 (ja) * | 2019-12-24 | 2020-11-25 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP7392526B2 (ja) * | 2020-03-10 | 2023-12-06 | 住友金属鉱山株式会社 | 炭化ケイ素単結晶基板の製造方法 |
| US11929428B2 (en) | 2021-05-17 | 2024-03-12 | Wolfspeed, Inc. | Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same |
| US12402346B2 (en) | 2021-05-17 | 2025-08-26 | Wolfspeed, Inc. | Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof |
| CN119028807B (zh) * | 2024-08-16 | 2025-10-24 | 浙江芯科半导体有限公司 | 双掺杂提高碳化硅外延片掺杂浓度均匀性的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270554A (en) * | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
| JP3230650B2 (ja) * | 1996-03-27 | 2001-11-19 | 富士電機株式会社 | 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子 |
| JP4185215B2 (ja) * | 1999-05-07 | 2008-11-26 | 弘之 松波 | ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法 |
| US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
| WO2003033781A1 (en) * | 2001-10-16 | 2003-04-24 | Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University | Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| US6911084B2 (en) * | 2001-09-26 | 2005-06-28 | Arizona Board Of Regents | Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| JP4311140B2 (ja) * | 2003-09-12 | 2009-08-12 | 住友電気工業株式会社 | Ｃｖｄエピタキシャル成長方法 |
| EP1619276B1 (en) * | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
| JP4839646B2 (ja) * | 2005-03-18 | 2011-12-21 | 住友電気工業株式会社 | 炭化珪素半導体の製造方法および炭化珪素半導体の製造装置 |
| JP2008311541A (ja) * | 2007-06-18 | 2008-12-25 | Fuji Electric Device Technology Co Ltd | 炭化珪素半導体基板の製造方法 |
| JP2009088223A (ja) * | 2007-09-28 | 2009-04-23 | Hitachi Cable Ltd | 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置 |
| JP5024032B2 (ja) * | 2007-12-27 | 2012-09-12 | 富士電機株式会社 | 半導体装置の製造装置および半導体装置の製造方法 |
| KR20110099029A (ko) * | 2008-12-08 | 2011-09-05 | 알타 디바이씨즈, 인크. | 에피택셜 리프트 오프를 위한 다중 스택 증착 |
| JP4887418B2 (ja) * | 2009-12-14 | 2012-02-29 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| JP4880052B2 (ja) * | 2010-05-11 | 2012-02-22 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
| US20130062628A1 (en) * | 2011-09-10 | 2013-03-14 | Semisouth Laboratories, Inc. | Methods for the epitaxial growth of silicon carbide |
-
2013
- 2013-10-22 TW TW102138096A patent/TW201417149A/zh unknown
- 2013-10-29 CN CN201310520811.XA patent/CN103789822A/zh active Pending
- 2013-10-30 JP JP2013225125A patent/JP2014093526A/ja active Pending
- 2013-10-31 EP EP13191058.0A patent/EP2728609B1/en active Active
- 2013-10-31 US US14/068,134 patent/US20140117381A1/en not_active Abandoned
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