JP2016184613A5 - - Google Patents

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Publication number
JP2016184613A5
JP2016184613A5 JP2015063257A JP2015063257A JP2016184613A5 JP 2016184613 A5 JP2016184613 A5 JP 2016184613A5 JP 2015063257 A JP2015063257 A JP 2015063257A JP 2015063257 A JP2015063257 A JP 2015063257A JP 2016184613 A5 JP2016184613 A5 JP 2016184613A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
concentration distribution
substrate
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JP2015063257A
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English (en)
Japanese (ja)
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JP2016184613A (ja
JP6494361B2 (ja
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Priority to JP2015063257A priority Critical patent/JP6494361B2/ja
Priority claimed from JP2015063257A external-priority patent/JP6494361B2/ja
Priority to US15/080,403 priority patent/US9911868B2/en
Publication of JP2016184613A publication Critical patent/JP2016184613A/ja
Publication of JP2016184613A5 publication Critical patent/JP2016184613A5/ja
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Publication of JP6494361B2 publication Critical patent/JP6494361B2/ja
Expired - Fee Related legal-status Critical Current
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JP2015063257A 2015-03-25 2015-03-25 窒化物半導体デバイス Expired - Fee Related JP6494361B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015063257A JP6494361B2 (ja) 2015-03-25 2015-03-25 窒化物半導体デバイス
US15/080,403 US9911868B2 (en) 2015-03-25 2016-03-24 Nitride semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015063257A JP6494361B2 (ja) 2015-03-25 2015-03-25 窒化物半導体デバイス

Publications (3)

Publication Number Publication Date
JP2016184613A JP2016184613A (ja) 2016-10-20
JP2016184613A5 true JP2016184613A5 (enExample) 2017-08-31
JP6494361B2 JP6494361B2 (ja) 2019-04-03

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JP2015063257A Expired - Fee Related JP6494361B2 (ja) 2015-03-25 2015-03-25 窒化物半導体デバイス

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US (1) US9911868B2 (enExample)
JP (1) JP6494361B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7260224B2 (ja) * 2019-01-18 2023-04-18 ローム株式会社 半導体装置
US10950750B2 (en) * 2019-03-06 2021-03-16 Bolb Inc. Heterostructure and light-emitting device employing the same
US11101378B2 (en) 2019-04-09 2021-08-24 Raytheon Company Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
JP7625361B2 (ja) * 2019-06-28 2025-02-03 株式会社東芝 半導体装置
US11545566B2 (en) * 2019-12-26 2023-01-03 Raytheon Company Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
US11362190B2 (en) 2020-05-22 2022-06-14 Raytheon Company Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
US12009417B2 (en) * 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance
US12446252B2 (en) 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
US12015075B2 (en) 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
JP2023136968A (ja) * 2022-03-17 2023-09-29 株式会社豊田中央研究所 窒化ガリウム基板および窒化ガリウム基板の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4449467B2 (ja) * 2004-01-28 2010-04-14 サンケン電気株式会社 半導体装置
CN101288179B (zh) * 2005-07-27 2010-05-26 英飞凌科技奥地利股份公司 具有漂移区和漂移控制区的半导体器件
JP5064824B2 (ja) * 2006-02-20 2012-10-31 古河電気工業株式会社 半導体素子
JP2009038270A (ja) * 2007-08-03 2009-02-19 Sansha Electric Mfg Co Ltd Ｐｉｎダイオード
JP4677499B2 (ja) * 2008-12-15 2011-04-27 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
JP2010258441A (ja) * 2009-03-31 2010-11-11 Furukawa Electric Co Ltd:The 電界効果トランジスタ
CN105977209B (zh) * 2010-10-20 2019-03-19 富士通株式会社 半导体装置及其制造方法
JP2013197357A (ja) * 2012-03-21 2013-09-30 Hitachi Cable Ltd 窒化物半導体デバイス及びその製造方法
JP2013235873A (ja) * 2012-05-02 2013-11-21 Renesas Electronics Corp 半導体装置およびその製造方法

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