JP2016184613A5 - - Google Patents
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- Publication number
- JP2016184613A5 JP2016184613A5 JP2015063257A JP2015063257A JP2016184613A5 JP 2016184613 A5 JP2016184613 A5 JP 2016184613A5 JP 2015063257 A JP2015063257 A JP 2015063257A JP 2015063257 A JP2015063257 A JP 2015063257A JP 2016184613 A5 JP2016184613 A5 JP 2016184613A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- layer
- concentration distribution
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 39
- 150000004767 nitrides Chemical class 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000691 measurement method Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 230000005684 electric field Effects 0.000 claims 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015063257A JP6494361B2 (ja) | 2015-03-25 | 2015-03-25 | 窒化物半導体デバイス |
| US15/080,403 US9911868B2 (en) | 2015-03-25 | 2016-03-24 | Nitride semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015063257A JP6494361B2 (ja) | 2015-03-25 | 2015-03-25 | 窒化物半導体デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016184613A JP2016184613A (ja) | 2016-10-20 |
| JP2016184613A5 true JP2016184613A5 (enExample) | 2017-08-31 |
| JP6494361B2 JP6494361B2 (ja) | 2019-04-03 |
Family
ID=56976563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015063257A Active JP6494361B2 (ja) | 2015-03-25 | 2015-03-25 | 窒化物半導体デバイス |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9911868B2 (enExample) |
| JP (1) | JP6494361B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7260224B2 (ja) * | 2019-01-18 | 2023-04-18 | ローム株式会社 | 半導体装置 |
| US10950750B2 (en) * | 2019-03-06 | 2021-03-16 | Bolb Inc. | Heterostructure and light-emitting device employing the same |
| US11101378B2 (en) | 2019-04-09 | 2021-08-24 | Raytheon Company | Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors |
| JP7625361B2 (ja) * | 2019-06-28 | 2025-02-03 | 株式会社東芝 | 半導体装置 |
| US11545566B2 (en) * | 2019-12-26 | 2023-01-03 | Raytheon Company | Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement |
| US11362190B2 (en) | 2020-05-22 | 2022-06-14 | Raytheon Company | Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers |
| US12446252B2 (en) | 2021-05-20 | 2025-10-14 | Macom Technology Solutions Holdings, Inc. | Transistors including semiconductor surface modification and related fabrication methods |
| US12009417B2 (en) * | 2021-05-20 | 2024-06-11 | Macom Technology Solutions Holdings, Inc. | High electron mobility transistors having improved performance |
| US12015075B2 (en) | 2021-05-20 | 2024-06-18 | Macom Technology Solutions Holdings, Inc. | Methods of manufacturing high electron mobility transistors having a modified interface region |
| JP2023136968A (ja) * | 2022-03-17 | 2023-09-29 | 株式会社豊田中央研究所 | 窒化ガリウム基板および窒化ガリウム基板の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449467B2 (ja) * | 2004-01-28 | 2010-04-14 | サンケン電気株式会社 | 半導体装置 |
| WO2007012490A2 (de) * | 2005-07-27 | 2007-02-01 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einer driftzone und einer driftsteuerzone |
| JP5064824B2 (ja) * | 2006-02-20 | 2012-10-31 | 古河電気工業株式会社 | 半導体素子 |
| JP2009038270A (ja) * | 2007-08-03 | 2009-02-19 | Sansha Electric Mfg Co Ltd | Ｐｉｎダイオード |
| JP4677499B2 (ja) * | 2008-12-15 | 2011-04-27 | Ｄｏｗａエレクトロニクス株式会社 | 電子デバイス用エピタキシャル基板およびその製造方法 |
| JP5697012B2 (ja) * | 2009-03-31 | 2015-04-08 | 古河電気工業株式会社 | 溝の形成方法、および電界効果トランジスタの製造方法 |
| CN105977209B (zh) * | 2010-10-20 | 2019-03-19 | 富士通株式会社 | 半导体装置及其制造方法 |
| JP2013197357A (ja) * | 2012-03-21 | 2013-09-30 | Hitachi Cable Ltd | 窒化物半導体デバイス及びその製造方法 |
| JP2013235873A (ja) * | 2012-05-02 | 2013-11-21 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
-
2015
- 2015-03-25 JP JP2015063257A patent/JP6494361B2/ja active Active
-
2016
- 2016-03-24 US US15/080,403 patent/US9911868B2/en active Active
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