TW201417149A - 磊晶晶圓 - Google Patents

磊晶晶圓 Download PDF

Info

Publication number
TW201417149A
TW201417149A TW102138096A TW102138096A TW201417149A TW 201417149 A TW201417149 A TW 201417149A TW 102138096 A TW102138096 A TW 102138096A TW 102138096 A TW102138096 A TW 102138096A TW 201417149 A TW201417149 A TW 201417149A
Authority
TW
Taiwan
Prior art keywords
epitaxial
substrate
growth
layer
gas
Prior art date
Application number
TW102138096A
Other languages
English (en)
Chinese (zh)
Inventor
姜石民
金知慧
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120122005A external-priority patent/KR20140055336A/ko
Priority claimed from KR1020120137988A external-priority patent/KR20140070015A/ko
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201417149A publication Critical patent/TW201417149A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
TW102138096A 2012-10-31 2013-10-22 磊晶晶圓 TW201417149A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120122005A KR20140055336A (ko) 2012-10-31 2012-10-31 에피택셜 웨이퍼 및 그 제조 방법
KR1020120137988A KR20140070015A (ko) 2012-11-30 2012-11-30 에피택셜 웨이퍼 및 그 제조 방법

Publications (1)

Publication Number Publication Date
TW201417149A true TW201417149A (zh) 2014-05-01

Family

ID=49488507

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102138096A TW201417149A (zh) 2012-10-31 2013-10-22 磊晶晶圓

Country Status (5)

Country Link
US (1) US20140117381A1 (enExample)
EP (1) EP2728609B1 (enExample)
JP (1) JP2014093526A (enExample)
CN (1) CN103789822A (enExample)
TW (1) TW201417149A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201417150A (zh) * 2012-10-31 2014-05-01 Ｌｇ伊諾特股份有限公司 磊晶晶圓
JP6149931B2 (ja) 2013-07-09 2017-06-21 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
US9957641B2 (en) 2014-08-01 2018-05-01 Sumitomo Electric Industries, Ltd. Epitaxial wafer and method for manufacturing same
US20180233562A1 (en) * 2014-10-01 2018-08-16 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate
EP3260581B1 (en) * 2015-02-18 2024-04-03 Resonac Corporation Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer
US9576894B2 (en) * 2015-06-03 2017-02-21 GlobalFoundries, Inc. Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same
WO2017043165A1 (ja) * 2015-09-11 2017-03-16 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6641814B2 (ja) * 2015-09-11 2020-02-05 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
CN105914272B (zh) * 2016-05-19 2018-10-02 芜湖德豪润达光电科技有限公司 一种发光二极管外延片及其制备方法
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US10192980B2 (en) 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
JP6973600B2 (ja) * 2019-12-24 2021-12-01 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6791348B2 (ja) * 2019-12-24 2020-11-25 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7392526B2 (ja) * 2020-03-10 2023-12-06 住友金属鉱山株式会社 炭化ケイ素単結晶基板の製造方法
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US12557322B2 (en) 2021-05-17 2026-02-17 Wolfspeed, Inc. Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof
CN119028807B (zh) * 2024-08-16 2025-10-24 浙江芯科半导体有限公司 双掺杂提高碳化硅外延片掺杂浓度均匀性的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
JP3230650B2 (ja) * 1996-03-27 2001-11-19 富士電機株式会社 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子
JP4185215B2 (ja) * 1999-05-07 2008-11-26 弘之 松波 ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
WO2003033781A1 (en) * 2001-10-16 2003-04-24 Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Low temperature epitaxial growth of quaternary wide bandgap semiconductors
US6911084B2 (en) * 2001-09-26 2005-06-28 Arizona Board Of Regents Low temperature epitaxial growth of quaternary wide bandgap semiconductors
JP4311140B2 (ja) * 2003-09-12 2009-08-12 住友電気工業株式会社 Ｃｖｄエピタキシャル成長方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP4839646B2 (ja) * 2005-03-18 2011-12-21 住友電気工業株式会社 炭化珪素半導体の製造方法および炭化珪素半導体の製造装置
JP2008311541A (ja) * 2007-06-18 2008-12-25 Fuji Electric Device Technology Co Ltd 炭化珪素半導体基板の製造方法
JP2009088223A (ja) * 2007-09-28 2009-04-23 Hitachi Cable Ltd 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置
JP5024032B2 (ja) * 2007-12-27 2012-09-12 富士電機株式会社 半導体装置の製造装置および半導体装置の製造方法
EP2374146A4 (en) * 2008-12-08 2013-07-17 Alta Devices Inc Multiple stack deposition for epitaxial lift off
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP4880052B2 (ja) * 2010-05-11 2012-02-22 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
WO2013036376A2 (en) * 2011-09-10 2013-03-14 Semisouth Laboratories, Inc. Methods for the epitaxial growth of silicon carbide

Also Published As

Publication number Publication date
EP2728609B1 (en) 2020-03-18
EP2728609A1 (en) 2014-05-07
US20140117381A1 (en) 2014-05-01
JP2014093526A (ja) 2014-05-19
CN103789822A (zh) 2014-05-14

Similar Documents

Publication Publication Date Title
TW201417149A (zh) 磊晶晶圓
CN104584190B (zh) 外延晶片及其制造方法
JP5316612B2 (ja) 炭化珪素半導体エピタキシャル基板の製造方法
US9368345B2 (en) Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device
TW201417150A (zh) 磊晶晶圓
KR20230132455A (ko) 에피택셜 웨이퍼의 제조방법
JP7259906B2 (ja) ヘテロエピタキシャルウェーハの製造方法
US20150311069A1 (en) Method for manufacturing silicon carbide semiconductor substrate
JP2004363510A (ja) 半導体基板の製造方法
KR20140055336A (ko) 에피택셜 웨이퍼 및 그 제조 방법
KR102098209B1 (ko) 에피택셜 웨이퍼 및 그 제조 방법
JP2004281591A (ja) 半導体エピタキシャルウエハとその製法，半導体装置及びその製法
CN115074825A (zh) 碳化硅外延结构、脉冲式生长方法及其应用
KR102131245B1 (ko) 에피택셜 웨이퍼
KR20140070013A (ko) 에피택셜 웨이퍼 및 그 제조 방법
Höchbauer et al. SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
KR20140070015A (ko) 에피택셜 웨이퍼 및 그 제조 방법
KR20140055337A (ko) 에피택셜 웨이퍼 및 그 제조 방법
TW201246288A (en) Method for producing a III/V SI template
KR20140055335A (ko) 에피택셜 웨이퍼 및 그 제조 방법
KR20190026471A (ko) 에피택셜 웨이퍼 및 그 제조 방법
CN106012022A (zh) 一种提高半绝缘氮化镓单晶电阻率均匀性的Fe掺杂方法
JP2014154587A (ja) 炭化珪素半導体基板の製造方法および炭化珪素半導体装置の製造方法
KR102119755B1 (ko) 에피택셜 웨이퍼 및 그 제조 방법
WO2013105230A1 (ja) 炭化珪素半導体薄膜の作製方法