TW201417149A - 磊晶晶圓 - Google Patents

磊晶晶圓 Download PDF

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Publication number
TW201417149A
TW201417149A TW102138096A TW102138096A TW201417149A TW 201417149 A TW201417149 A TW 201417149A TW 102138096 A TW102138096 A TW 102138096A TW 102138096 A TW102138096 A TW 102138096A TW 201417149 A TW201417149 A TW 201417149A
Authority
TW
Taiwan
Prior art keywords
epitaxial
substrate
growth
layer
gas
Prior art date
Application number
TW102138096A
Other languages
English (en)
Chinese (zh)
Inventor
姜石民
金知慧
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120122005A external-priority patent/KR20140055336A/ko
Priority claimed from KR1020120137988A external-priority patent/KR20140070015A/ko
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201417149A publication Critical patent/TW201417149A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P14/24—
    • H10P14/2904—
    • H10P14/3208—
    • H10P14/3408—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
TW102138096A 2012-10-31 2013-10-22 磊晶晶圓 TW201417149A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120122005A KR20140055336A (ko) 2012-10-31 2012-10-31 에피택셜 웨이퍼 및 그 제조 방법
KR1020120137988A KR20140070015A (ko) 2012-11-30 2012-11-30 에피택셜 웨이퍼 및 그 제조 방법

Publications (1)

Publication Number Publication Date
TW201417149A true TW201417149A (zh) 2014-05-01

Family

ID=49488507

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102138096A TW201417149A (zh) 2012-10-31 2013-10-22 磊晶晶圓

Country Status (5)

Country Link
US (1) US20140117381A1 (enExample)
EP (1) EP2728609B1 (enExample)
JP (1) JP2014093526A (enExample)
CN (1) CN103789822A (enExample)
TW (1) TW201417149A (enExample)

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TW201417150A (zh) * 2012-10-31 2014-05-01 Ｌｇ伊諾特股份有限公司 磊晶晶圓
CN105008598B (zh) 2013-07-09 2018-01-19 富士电机株式会社 碳化硅半导体装置的制造方法以及碳化硅半导体装置
DE112015003559B4 (de) * 2014-08-01 2024-08-22 Sumitomo Electric Industries, Ltd. Epitaxialer Wafer
CN106715767A (zh) * 2014-10-01 2017-05-24 住友电气工业株式会社 碳化硅外延基板
CN107002282A (zh) * 2015-02-18 2017-08-01 新日铁住金株式会社 外延碳化硅单晶晶片的制造方法以及外延碳化硅单晶晶片
US9576894B2 (en) * 2015-06-03 2017-02-21 GlobalFoundries, Inc. Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same
JP6641814B2 (ja) * 2015-09-11 2020-02-05 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
US10865501B2 (en) * 2015-09-11 2020-12-15 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
CN105914272B (zh) * 2016-05-19 2018-10-02 芜湖德豪润达光电科技有限公司 一种发光二极管外延片及其制备方法
US11430882B2 (en) * 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10192980B2 (en) 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
JP6791348B2 (ja) * 2019-12-24 2020-11-25 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6973600B2 (ja) * 2019-12-24 2021-12-01 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7392526B2 (ja) * 2020-03-10 2023-12-06 住友金属鉱山株式会社 炭化ケイ素単結晶基板の製造方法
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
CN119028807B (zh) * 2024-08-16 2025-10-24 浙江芯科半导体有限公司 双掺杂提高碳化硅外延片掺杂浓度均匀性的方法

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US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
JP3230650B2 (ja) * 1996-03-27 2001-11-19 富士電機株式会社 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子
JP4185215B2 (ja) * 1999-05-07 2008-11-26 弘之 松波 ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US6911084B2 (en) * 2001-09-26 2005-06-28 Arizona Board Of Regents Low temperature epitaxial growth of quaternary wide bandgap semiconductors
KR20040058206A (ko) * 2001-10-16 2004-07-03 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 4원 광 밴드갭 반도체의 저온 에피택셜 성장
JP4311140B2 (ja) * 2003-09-12 2009-08-12 住友電気工業株式会社 Ｃｖｄエピタキシャル成長方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP4839646B2 (ja) * 2005-03-18 2011-12-21 住友電気工業株式会社 炭化珪素半導体の製造方法および炭化珪素半導体の製造装置
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JP2009088223A (ja) * 2007-09-28 2009-04-23 Hitachi Cable Ltd 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置
JP5024032B2 (ja) * 2007-12-27 2012-09-12 富士電機株式会社 半導体装置の製造装置および半導体装置の製造方法
EP2374146A4 (en) * 2008-12-08 2013-07-17 Alta Devices Inc Multiple stack deposition for epitaxial lift off
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP4880052B2 (ja) * 2010-05-11 2012-02-22 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
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Also Published As

Publication number Publication date
EP2728609A1 (en) 2014-05-07
EP2728609B1 (en) 2020-03-18
US20140117381A1 (en) 2014-05-01
CN103789822A (zh) 2014-05-14
JP2014093526A (ja) 2014-05-19

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