JP2018056163A5 - - Google Patents

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Publication number
JP2018056163A5
JP2018056163A5 JP2016186769A JP2016186769A JP2018056163A5 JP 2018056163 A5 JP2018056163 A5 JP 2018056163A5 JP 2016186769 A JP2016186769 A JP 2016186769A JP 2016186769 A JP2016186769 A JP 2016186769A JP 2018056163 A5 JP2018056163 A5 JP 2018056163A5
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semiconductor device
type electrode
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JP2016186769A
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English (en)
Japanese (ja)
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JP6698487B2 (ja
JP2018056163A (ja
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Priority claimed from JP2016186769A external-priority patent/JP6698487B2/ja
Priority to JP2016186769A priority Critical patent/JP6698487B2/ja
Priority to US15/480,593 priority patent/US9960158B2/en
Priority to DE102017212818.6A priority patent/DE102017212818B4/de
Priority to CN201710881263.1A priority patent/CN107871779A/zh
Priority to CN202210629378.2A priority patent/CN115064535B/zh
Publication of JP2018056163A publication Critical patent/JP2018056163A/ja
Publication of JP2018056163A5 publication Critical patent/JP2018056163A5/ja
Publication of JP6698487B2 publication Critical patent/JP6698487B2/ja
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JP2016186769A 2016-09-26 2016-09-26 半導体装置 Active JP6698487B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016186769A JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置
US15/480,593 US9960158B2 (en) 2016-09-26 2017-04-06 Semiconductor device
DE102017212818.6A DE102017212818B4 (de) 2016-09-26 2017-07-26 Halbleiteranordnung
CN202210629378.2A CN115064535B (zh) 2016-09-26 2017-09-26 半导体装置
CN201710881263.1A CN107871779A (zh) 2016-09-26 2017-09-26 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016186769A JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置

Publications (3)

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JP2018056163A JP2018056163A (ja) 2018-04-05
JP2018056163A5 true JP2018056163A5 (enExample) 2018-12-06
JP6698487B2 JP6698487B2 (ja) 2020-05-27

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JP2016186769A Active JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置

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US (1) US9960158B2 (enExample)
JP (1) JP6698487B2 (enExample)
CN (2) CN107871779A (enExample)
DE (1) DE102017212818B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7124339B2 (ja) * 2018-02-28 2022-08-24 富士電機株式会社 半導体装置
JP7115124B2 (ja) * 2018-08-03 2022-08-09 株式会社デンソー 半導体装置の製造方法
JP7718052B2 (ja) * 2020-06-17 2025-08-05 富士電機株式会社 半導体装置および半導体装置の製造方法
CN117410326A (zh) * 2023-11-22 2024-01-16 陕西华茂半导体科技有限公司 一种具有软恢复特性的rc-igbt器件及制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539360A (en) 1976-07-12 1978-01-27 Fuji System Drink flavor enhancing composition
JP2007184486A (ja) 2006-01-10 2007-07-19 Denso Corp 半導体装置
EP2073271A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
JP5309360B2 (ja) 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
JP5429175B2 (ja) * 2008-09-29 2014-02-26 日本電気株式会社 半導体受光素子およびその製造方法
JP2010114248A (ja) 2008-11-06 2010-05-20 Toyota Central R&D Labs Inc 半導体装置
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
JP5995435B2 (ja) 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
WO2014156849A1 (ja) * 2013-03-25 2014-10-02 富士電機株式会社 半導体装置
JP5867484B2 (ja) * 2013-11-14 2016-02-24 トヨタ自動車株式会社 半導体装置の製造方法
JP6181597B2 (ja) 2014-04-28 2017-08-16 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
WO2016112047A1 (en) * 2015-01-05 2016-07-14 Maxpower Semiconductor, Inc. Reverse-conducting gated-base bipolar-conduction devices and methods with reduced risk of warping
WO2016129041A1 (ja) * 2015-02-09 2016-08-18 三菱電機株式会社 半導体装置

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