JP2016081981A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016081981A5 JP2016081981A5 JP2014209618A JP2014209618A JP2016081981A5 JP 2016081981 A5 JP2016081981 A5 JP 2016081981A5 JP 2014209618 A JP2014209618 A JP 2014209618A JP 2014209618 A JP2014209618 A JP 2014209618A JP 2016081981 A5 JP2016081981 A5 JP 2016081981A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- semiconductor device
- film
- termination region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014209618A JP2016081981A (ja) | 2014-10-14 | 2014-10-14 | 半導体装置及びその製造方法 |
| US14/878,711 US20160104614A1 (en) | 2014-10-14 | 2015-10-08 | Semiconductor Device and a Method of Manufacturing Same |
| EP15189734.5A EP3010045A1 (en) | 2014-10-14 | 2015-10-14 | Semiconductor device and a method of manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014209618A JP2016081981A (ja) | 2014-10-14 | 2014-10-14 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016081981A JP2016081981A (ja) | 2016-05-16 |
| JP2016081981A5 true JP2016081981A5 (enExample) | 2017-03-09 |
Family
ID=54329411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014209618A Pending JP2016081981A (ja) | 2014-10-14 | 2014-10-14 | 半導体装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20160104614A1 (enExample) |
| EP (1) | EP3010045A1 (enExample) |
| JP (1) | JP2016081981A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6547844B2 (ja) * | 2015-12-18 | 2019-07-24 | 富士電機株式会社 | 炭化珪素半導体基板、炭化珪素半導体基板の製造方法、半導体装置および半導体装置の製造方法 |
| US9998109B1 (en) | 2017-05-15 | 2018-06-12 | Cree, Inc. | Power module with improved reliability |
| CN115602703B (zh) | 2021-07-09 | 2025-09-23 | 丰田自动车株式会社 | 半导体装置以及半导体装置的制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07249770A (ja) * | 1994-03-10 | 1995-09-26 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH11103070A (ja) * | 1997-08-01 | 1999-04-13 | Sony Corp | 薄膜トランジスタ |
| JPH11330496A (ja) | 1998-05-07 | 1999-11-30 | Hitachi Ltd | 半導体装置 |
| US7625603B2 (en) * | 2003-11-14 | 2009-12-01 | Robert Bosch Gmbh | Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics |
| US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
| JP4189415B2 (ja) * | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
| KR101190942B1 (ko) * | 2008-02-12 | 2012-10-12 | 미쓰비시덴키 가부시키가이샤 | 탄화규소 반도체 장치 |
| IT1392577B1 (it) * | 2008-12-30 | 2012-03-09 | St Microelectronics Rousset | Processo di fabbricazione di un dispositivo elettronico di potenza integrato in un substrato semiconduttore ad ampio intervallo di banda proibita e dispositivo elettronico cosi' ottenuto |
| JP2010161241A (ja) * | 2009-01-08 | 2010-07-22 | Toyota Motor Corp | 半導体装置および半導体装置の製造方法 |
| JP5223773B2 (ja) * | 2009-05-14 | 2013-06-26 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
| JP2011040431A (ja) * | 2009-08-06 | 2011-02-24 | Panasonic Corp | 半導体装置およびその製造方法 |
| JP5443908B2 (ja) * | 2009-09-09 | 2014-03-19 | 株式会社東芝 | 半導体装置の製造方法 |
| JP5439215B2 (ja) * | 2010-02-10 | 2014-03-12 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP5628765B2 (ja) | 2011-08-19 | 2014-11-19 | 株式会社日立製作所 | 半導体装置 |
| JP2013120822A (ja) * | 2011-12-07 | 2013-06-17 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| US9991399B2 (en) * | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
-
2014
- 2014-10-14 JP JP2014209618A patent/JP2016081981A/ja active Pending
-
2015
- 2015-10-08 US US14/878,711 patent/US20160104614A1/en not_active Abandoned
- 2015-10-14 EP EP15189734.5A patent/EP3010045A1/en not_active Withdrawn