JP2014110277A5 - - Google Patents
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- JP2014110277A5 JP2014110277A5 JP2012262817A JP2012262817A JP2014110277A5 JP 2014110277 A5 JP2014110277 A5 JP 2014110277A5 JP 2012262817 A JP2012262817 A JP 2012262817A JP 2012262817 A JP2012262817 A JP 2012262817A JP 2014110277 A5 JP2014110277 A5 JP 2014110277A5
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- 230000001681 protective effect Effects 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012262817A JP5943819B2 (ja) | 2012-11-30 | 2012-11-30 | 半導体素子、半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012262817A JP5943819B2 (ja) | 2012-11-30 | 2012-11-30 | 半導体素子、半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014110277A JP2014110277A (ja) | 2014-06-12 |
| JP2014110277A5 true JP2014110277A5 (enExample) | 2014-11-20 |
| JP5943819B2 JP5943819B2 (ja) | 2016-07-05 |
Family
ID=51030755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012262817A Active JP5943819B2 (ja) | 2012-11-30 | 2012-11-30 | 半導体素子、半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5943819B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6457663B2 (ja) * | 2016-01-05 | 2019-01-23 | 株式会社日立製作所 | 半導体装置 |
| JP6647151B2 (ja) * | 2016-06-15 | 2020-02-14 | 株式会社 日立パワーデバイス | 半導体装置およびその製造方法並びに半導体モジュールおよび電力変換装置 |
| DE112017003653B4 (de) * | 2016-07-20 | 2024-11-21 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleitereinheit und verfahren zur herstellung derselben |
| JP7113220B2 (ja) * | 2018-02-06 | 2022-08-05 | パナソニックＩｐマネジメント株式会社 | 半導体素子およびその製造方法 |
| US11387156B2 (en) * | 2018-07-11 | 2022-07-12 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device including a resin covering a silicon carbide semiconductor chip |
| CN113678261B (zh) * | 2019-04-09 | 2025-02-07 | 三菱电机株式会社 | 半导体装置及半导体模块 |
| CN110176434A (zh) * | 2019-06-26 | 2019-08-27 | 无锡明祥电子有限公司 | 一种半导体芯片边缘和框架的绝缘封装方法及绝缘隔片 |
| CN115050834A (zh) * | 2022-05-31 | 2022-09-13 | 上海积塔半导体有限公司 | 一种mosfet单元结构及其制备方法 |
| CN115312586B (zh) * | 2022-09-01 | 2023-10-17 | 江苏长晶科技股份有限公司 | 一种碳化硅功率器件 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6870201B1 (en) * | 1997-11-03 | 2005-03-22 | Infineon Technologies Ag | High voltage resistant edge structure for semiconductor components |
| US8471267B2 (en) * | 2009-09-03 | 2013-06-25 | Panasonic Corporation | Semiconductor device and method for producing same |
| JP2012156153A (ja) * | 2011-01-21 | 2012-08-16 | Kansai Electric Power Co Inc:The | 半導体装置 |
| JP2012191038A (ja) * | 2011-03-11 | 2012-10-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
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2012
- 2012-11-30 JP JP2012262817A patent/JP5943819B2/ja active Active