JP5943819B2 - 半導体素子、半導体装置 - Google Patents

半導体素子、半導体装置 Download PDF

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Publication number
JP5943819B2
JP5943819B2 JP2012262817A JP2012262817A JP5943819B2 JP 5943819 B2 JP5943819 B2 JP 5943819B2 JP 2012262817 A JP2012262817 A JP 2012262817A JP 2012262817 A JP2012262817 A JP 2012262817A JP 5943819 B2 JP5943819 B2 JP 5943819B2
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Japan
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region
ring
semiconductor element
protective film
semiconductor
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JP2012262817A
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Japanese (ja)
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JP2014110277A5 (enExample
JP2014110277A (ja
Inventor
善夫 藤井
善夫 藤井
川上　剛史
剛史 川上
洪平 海老原
洪平 海老原
中田　修平
修平 中田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2012262817A priority Critical patent/JP5943819B2/ja
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Publication of JP2014110277A5 publication Critical patent/JP2014110277A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012262817A 2012-11-30 2012-11-30 半導体素子、半導体装置 Active JP5943819B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012262817A JP5943819B2 (ja) 2012-11-30 2012-11-30 半導体素子、半導体装置

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Application Number Priority Date Filing Date Title
JP2012262817A JP5943819B2 (ja) 2012-11-30 2012-11-30 半導体素子、半導体装置

Publications (3)

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JP2014110277A JP2014110277A (ja) 2014-06-12
JP2014110277A5 JP2014110277A5 (enExample) 2014-11-20
JP5943819B2 true JP5943819B2 (ja) 2016-07-05

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JP (1) JP5943819B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3401954B1 (en) * 2016-01-05 2020-05-06 Hitachi, Ltd. Semiconductor device
JP6647151B2 (ja) * 2016-06-15 2020-02-14 株式会社 日立パワーデバイス 半導体装置およびその製造方法並びに半導体モジュールおよび電力変換装置
WO2018016165A1 (ja) * 2016-07-20 2018-01-25 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP7113220B2 (ja) * 2018-02-06 2022-08-05 パナソニックＩｐマネジメント株式会社 半導体素子およびその製造方法
US11387156B2 (en) * 2018-07-11 2022-07-12 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device including a resin covering a silicon carbide semiconductor chip
CN113678261B (zh) * 2019-04-09 2025-02-07 三菱电机株式会社 半导体装置及半导体模块
CN110176434A (zh) * 2019-06-26 2019-08-27 无锡明祥电子有限公司 一种半导体芯片边缘和框架的绝缘封装方法及绝缘隔片
CN115050834A (zh) * 2022-05-31 2022-09-13 上海积塔半导体有限公司 一种mosfet单元结构及其制备方法
CN115312586B (zh) * 2022-09-01 2023-10-17 江苏长晶科技股份有限公司 一种碳化硅功率器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3628613B2 (ja) * 1997-11-03 2005-03-16 インフィネオン テクノロジース アクチエンゲゼルシャフト 半導体構成素子のための耐高圧縁部構造
US8471267B2 (en) * 2009-09-03 2013-06-25 Panasonic Corporation Semiconductor device and method for producing same
JP2012156153A (ja) * 2011-01-21 2012-08-16 Kansai Electric Power Co Inc:The 半導体装置
JP2012191038A (ja) * 2011-03-11 2012-10-04 Mitsubishi Electric Corp 半導体装置の製造方法

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