JP2016081981A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2016081981A
JP2016081981A JP2014209618A JP2014209618A JP2016081981A JP 2016081981 A JP2016081981 A JP 2016081981A JP 2014209618 A JP2014209618 A JP 2014209618A JP 2014209618 A JP2014209618 A JP 2014209618A JP 2016081981 A JP2016081981 A JP 2016081981A
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Japan
Prior art keywords
silicon oxide
type
oxide film
region
film
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Pending
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JP2014209618A
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English (en)
Japanese (ja)
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JP2016081981A5 (enExample
Inventor
二郎 長谷川
Jiro Hasegawa
二郎 長谷川
善章 豊田
Yoshiaki Toyoda
善章 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Ltd
Priority to JP2014209618A priority Critical patent/JP2016081981A/ja
Priority to US14/878,711 priority patent/US20160104614A1/en
Priority to EP15189734.5A priority patent/EP3010045A1/en
Publication of JP2016081981A publication Critical patent/JP2016081981A/ja
Publication of JP2016081981A5 publication Critical patent/JP2016081981A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
JP2014209618A 2014-10-14 2014-10-14 半導体装置及びその製造方法 Pending JP2016081981A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014209618A JP2016081981A (ja) 2014-10-14 2014-10-14 半導体装置及びその製造方法
US14/878,711 US20160104614A1 (en) 2014-10-14 2015-10-08 Semiconductor Device and a Method of Manufacturing Same
EP15189734.5A EP3010045A1 (en) 2014-10-14 2015-10-14 Semiconductor device and a method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014209618A JP2016081981A (ja) 2014-10-14 2014-10-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2016081981A true JP2016081981A (ja) 2016-05-16
JP2016081981A5 JP2016081981A5 (enExample) 2017-03-09

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Country Link
US (1) US20160104614A1 (enExample)
EP (1) EP3010045A1 (enExample)
JP (1) JP2016081981A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426318B2 (en) 2021-07-09 2025-09-23 Toyota Jidosha Kabushiki Kaisha Semiconductor device and method of manufacturing semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6547844B2 (ja) 2015-12-18 2019-07-24 富士電機株式会社 炭化珪素半導体基板、炭化珪素半導体基板の製造方法、半導体装置および半導体装置の製造方法
US9998109B1 (en) * 2017-05-15 2018-06-12 Cree, Inc. Power module with improved reliability

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249770A (ja) * 1994-03-10 1995-09-26 Toshiba Corp 半導体装置及びその製造方法
JPH11103070A (ja) * 1997-08-01 1999-04-13 Sony Corp 薄膜トランジスタ
JP2010161241A (ja) * 2009-01-08 2010-07-22 Toyota Motor Corp 半導体装置および半導体装置の製造方法
JP2010267783A (ja) * 2009-05-14 2010-11-25 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP2011040431A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 半導体装置およびその製造方法
JP2011060939A (ja) * 2009-09-09 2011-03-24 Toshiba Corp 半導体装置の製造方法
WO2013084620A1 (ja) * 2011-12-07 2013-06-13 住友電気工業株式会社 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330496A (ja) 1998-05-07 1999-11-30 Hitachi Ltd 半導体装置
US7625603B2 (en) * 2003-11-14 2009-12-01 Robert Bosch Gmbh Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
JP4189415B2 (ja) * 2006-06-30 2008-12-03 株式会社東芝 半導体装置
KR101190942B1 (ko) * 2008-02-12 2012-10-12 미쓰비시덴키 가부시키가이샤 탄화규소 반도체 장치
IT1392577B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Processo di fabbricazione di un dispositivo elettronico di potenza integrato in un substrato semiconduttore ad ampio intervallo di banda proibita e dispositivo elettronico cosi' ottenuto
JP5439215B2 (ja) * 2010-02-10 2014-03-12 株式会社東芝 半導体装置および半導体装置の製造方法
JP5628765B2 (ja) 2011-08-19 2014-11-19 株式会社日立製作所 半導体装置
US9991399B2 (en) * 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249770A (ja) * 1994-03-10 1995-09-26 Toshiba Corp 半導体装置及びその製造方法
JPH11103070A (ja) * 1997-08-01 1999-04-13 Sony Corp 薄膜トランジスタ
JP2010161241A (ja) * 2009-01-08 2010-07-22 Toyota Motor Corp 半導体装置および半導体装置の製造方法
JP2010267783A (ja) * 2009-05-14 2010-11-25 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP2011040431A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 半導体装置およびその製造方法
JP2011060939A (ja) * 2009-09-09 2011-03-24 Toshiba Corp 半導体装置の製造方法
WO2013084620A1 (ja) * 2011-12-07 2013-06-13 住友電気工業株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426318B2 (en) 2021-07-09 2025-09-23 Toyota Jidosha Kabushiki Kaisha Semiconductor device and method of manufacturing semiconductor device

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US20160104614A1 (en) 2016-04-14
EP3010045A1 (en) 2016-04-20

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