JP6519455B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6519455B2 JP6519455B2 JP2015230229A JP2015230229A JP6519455B2 JP 6519455 B2 JP6519455 B2 JP 6519455B2 JP 2015230229 A JP2015230229 A JP 2015230229A JP 2015230229 A JP2015230229 A JP 2015230229A JP 6519455 B2 JP6519455 B2 JP 6519455B2
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- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims description 28
- 238000002161 passivation Methods 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1602—Diamond
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (6)
- 半導体基板と、
前記半導体基板に形成された素子領域と、
前記素子領域を囲むように前記半導体基板に形成されたプレーナ型の終端領域と、
前記素子領域の一部と前記終端領域を覆うパシベーション膜とを備え、
前記パシベーション膜は、前記終端領域のみで前記半導体基板に直接的に接し、前記素子領域の電極に直接的に接する半絶縁膜を有することを特徴とする半導体装置。 - 前記パシベーション膜は、前記素子領域で前記半導体基板に直接的に接する第1の絶縁膜と、前記第1の絶縁膜と前記半絶縁膜の上に形成された第2の絶縁膜とを有することを特徴とする請求項1に記載の半導体装置。
- 前記第2の絶縁膜はHigh−K膜であることを特徴とする請求項2に記載の半導体装置。
- 前記半絶縁膜の抵抗値は107〜1011[Ω/mm2]であることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記終端領域は、リング状の複数の第2導電型リング層を有するFLR(Field Limiting Ring)構造又はLNFLR(Linearly-narrowed Field Limiting Ring)構造であることを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- 前記半絶縁膜はプラズマCVD膜であることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015230229A JP6519455B2 (ja) | 2015-11-26 | 2015-11-26 | 半導体装置 |
US15/173,749 US20170154955A1 (en) | 2015-11-26 | 2016-06-06 | Semiconductor device |
DE102016218418.0A DE102016218418A1 (de) | 2015-11-26 | 2016-09-26 | Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015230229A JP6519455B2 (ja) | 2015-11-26 | 2015-11-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017098440A JP2017098440A (ja) | 2017-06-01 |
JP6519455B2 true JP6519455B2 (ja) | 2019-05-29 |
Family
ID=58693314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015230229A Active JP6519455B2 (ja) | 2015-11-26 | 2015-11-26 | 半導体装置 |
Country Status (3)
Country | Link |
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US (1) | US20170154955A1 (ja) |
JP (1) | JP6519455B2 (ja) |
DE (1) | DE102016218418A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11824084B2 (en) | 2020-10-22 | 2023-11-21 | Mitsubishi Electric Corporation | Power semiconductor device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6820738B2 (ja) | 2016-12-27 | 2021-01-27 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
CN107579057A (zh) * | 2017-09-14 | 2018-01-12 | 全球能源互联网研究院 | 能进行终端横向耐压测试的igbt版图 |
JP6964566B2 (ja) | 2018-08-17 | 2021-11-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2020136473A (ja) * | 2019-02-19 | 2020-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
JP7193387B2 (ja) * | 2019-03-14 | 2022-12-20 | 株式会社東芝 | 半導体装置 |
JP7227110B2 (ja) | 2019-09-18 | 2023-02-21 | 株式会社東芝 | 半導体装置 |
JP7345354B2 (ja) * | 2019-10-25 | 2023-09-15 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60102770A (ja) * | 1983-11-09 | 1985-06-06 | Toshiba Corp | 半導体装置 |
JPS63209161A (ja) * | 1987-02-26 | 1988-08-30 | Toshiba Corp | 高耐圧プレ−ナ素子 |
JPH0817228B2 (ja) * | 1988-03-11 | 1996-02-21 | サンケン電気株式会社 | 半導体装置の製造方法 |
JP2904545B2 (ja) * | 1990-05-08 | 1999-06-14 | 株式会社東芝 | 高耐圧プレーナ型半導体素子およびその製造方法 |
JP2870553B2 (ja) * | 1990-11-08 | 1999-03-17 | 富士電機株式会社 | 高耐圧半導体装置 |
JPH11330496A (ja) * | 1998-05-07 | 1999-11-30 | Hitachi Ltd | 半導体装置 |
JP2003069045A (ja) * | 2001-08-22 | 2003-03-07 | Mitsubishi Electric Corp | 半導体装置 |
DE102006011697B4 (de) * | 2006-03-14 | 2012-01-26 | Infineon Technologies Austria Ag | Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung |
JP5388487B2 (ja) | 2008-06-18 | 2014-01-15 | 三菱電機株式会社 | 高耐圧半導体装置 |
JP2015230229A (ja) | 2014-06-04 | 2015-12-21 | 株式会社リコー | 非接触レーザスキャニング分光画像取得装置及び分光画像取得方法 |
US9576791B2 (en) * | 2015-06-01 | 2017-02-21 | GM Global Technology Operations LLC | Semiconductor devices including semiconductor structures and methods of fabricating the same |
-
2015
- 2015-11-26 JP JP2015230229A patent/JP6519455B2/ja active Active
-
2016
- 2016-06-06 US US15/173,749 patent/US20170154955A1/en not_active Abandoned
- 2016-09-26 DE DE102016218418.0A patent/DE102016218418A1/de active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11824084B2 (en) | 2020-10-22 | 2023-11-21 | Mitsubishi Electric Corporation | Power semiconductor device |
Also Published As
Publication number | Publication date |
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US20170154955A1 (en) | 2017-06-01 |
DE102016218418A1 (de) | 2017-06-01 |
JP2017098440A (ja) | 2017-06-01 |
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