JP2017098440A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017098440A JP2017098440A JP2015230229A JP2015230229A JP2017098440A JP 2017098440 A JP2017098440 A JP 2017098440A JP 2015230229 A JP2015230229 A JP 2015230229A JP 2015230229 A JP2015230229 A JP 2015230229A JP 2017098440 A JP2017098440 A JP 2017098440A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/861—Diodes
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/2003—Nitride compounds
Abstract
【解決手段】半導体基板1に素子領域2が形成されている。この素子領域2を囲むように半導体基板1に形成されたプレーナ型の終端領域3が形成されている。パシベーション膜9が終端領域3を覆っている。パシベーション膜9は、半導体基板1に直接的に接する半絶縁膜11を有する。
【選択図】図2
Description
Claims (5)
- 半導体基板と、
前記半導体基板に形成された素子領域と、
前記素子領域を囲むように前記半導体基板に形成されたプレーナ型の終端領域と、
前記終端領域を覆うパシベーション膜とを備え、
前記パシベーション膜は、前記半導体基板に直接的に接する半絶縁膜を有することを特徴とする半導体装置。 - 前記半絶縁膜の抵抗値は107〜1011[Ω/mm2]であることを特徴とする請求項1に記載の半導体装置。
- 前記終端領域は、リング状の複数の第2導電型リング層を有するFLR(Field Limiting Ring)構造又はLNFLR(Linearly-narrowed Field Limiting Ring)構造であることを特徴とする請求項1又は2に記載の半導体装置。
- 前記半絶縁膜はプラズマCVD膜であることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記パシベーション膜は、前記半絶縁膜上に形成されたHigh−K膜を更に有する多層膜であることを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015230229A JP6519455B2 (ja) | 2015-11-26 | 2015-11-26 | 半導体装置 |
US15/173,749 US20170154955A1 (en) | 2015-11-26 | 2016-06-06 | Semiconductor device |
DE102016218418.0A DE102016218418A1 (de) | 2015-11-26 | 2016-09-26 | Halbleitervorrichtung |
Applications Claiming Priority (1)
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---|---|---|---|
JP2015230229A JP6519455B2 (ja) | 2015-11-26 | 2015-11-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2017098440A true JP2017098440A (ja) | 2017-06-01 |
JP6519455B2 JP6519455B2 (ja) | 2019-05-29 |
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JP2015230229A Active JP6519455B2 (ja) | 2015-11-26 | 2015-11-26 | 半導体装置 |
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US (1) | US20170154955A1 (ja) |
JP (1) | JP6519455B2 (ja) |
DE (1) | DE102016218418A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10026803B1 (en) | 2016-12-27 | 2018-07-17 | Mitsubishi Electric Corporation | Semiconductor device, power conversion device, and method of manufacturing semiconductor device |
JP2020136473A (ja) * | 2019-02-19 | 2020-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
JP2020150157A (ja) * | 2019-03-14 | 2020-09-17 | 株式会社東芝 | 半導体装置 |
CN112531010A (zh) * | 2019-09-18 | 2021-03-19 | 株式会社东芝 | 半导体装置 |
US11101133B2 (en) | 2018-08-17 | 2021-08-24 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
CN112531010B (zh) * | 2019-09-18 | 2024-04-26 | 株式会社东芝 | 半导体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107579057A (zh) * | 2017-09-14 | 2018-01-12 | 全球能源互联网研究院 | 能进行终端横向耐压测试的igbt版图 |
JP7345354B2 (ja) * | 2019-10-25 | 2023-09-15 | 三菱電機株式会社 | 半導体装置 |
JP7450516B2 (ja) | 2020-10-22 | 2024-03-15 | 三菱電機株式会社 | 電力用半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60102770A (ja) * | 1983-11-09 | 1985-06-06 | Toshiba Corp | 半導体装置 |
JPS63209161A (ja) * | 1987-02-26 | 1988-08-30 | Toshiba Corp | 高耐圧プレ−ナ素子 |
JPH01231367A (ja) * | 1988-03-11 | 1989-09-14 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
JPH0414266A (ja) * | 1990-05-08 | 1992-01-20 | Toshiba Corp | 高耐圧プレーナ型半導体素子およびその製造方法 |
JPH04212468A (ja) * | 1990-11-08 | 1992-08-04 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
JPH11330496A (ja) * | 1998-05-07 | 1999-11-30 | Hitachi Ltd | 半導体装置 |
JP2003069045A (ja) * | 2001-08-22 | 2003-03-07 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006011697B4 (de) * | 2006-03-14 | 2012-01-26 | Infineon Technologies Austria Ag | Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung |
JP5388487B2 (ja) | 2008-06-18 | 2014-01-15 | 三菱電機株式会社 | 高耐圧半導体装置 |
JP2015230229A (ja) | 2014-06-04 | 2015-12-21 | 株式会社リコー | 非接触レーザスキャニング分光画像取得装置及び分光画像取得方法 |
US9576791B2 (en) * | 2015-06-01 | 2017-02-21 | GM Global Technology Operations LLC | Semiconductor devices including semiconductor structures and methods of fabricating the same |
-
2015
- 2015-11-26 JP JP2015230229A patent/JP6519455B2/ja active Active
-
2016
- 2016-06-06 US US15/173,749 patent/US20170154955A1/en not_active Abandoned
- 2016-09-26 DE DE102016218418.0A patent/DE102016218418A1/de active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60102770A (ja) * | 1983-11-09 | 1985-06-06 | Toshiba Corp | 半導体装置 |
JPS63209161A (ja) * | 1987-02-26 | 1988-08-30 | Toshiba Corp | 高耐圧プレ−ナ素子 |
JPH01231367A (ja) * | 1988-03-11 | 1989-09-14 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
JPH0414266A (ja) * | 1990-05-08 | 1992-01-20 | Toshiba Corp | 高耐圧プレーナ型半導体素子およびその製造方法 |
JPH04212468A (ja) * | 1990-11-08 | 1992-08-04 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
JPH11330496A (ja) * | 1998-05-07 | 1999-11-30 | Hitachi Ltd | 半導体装置 |
JP2003069045A (ja) * | 2001-08-22 | 2003-03-07 | Mitsubishi Electric Corp | 半導体装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10026803B1 (en) | 2016-12-27 | 2018-07-17 | Mitsubishi Electric Corporation | Semiconductor device, power conversion device, and method of manufacturing semiconductor device |
US11101133B2 (en) | 2018-08-17 | 2021-08-24 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
JP2020136473A (ja) * | 2019-02-19 | 2020-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
JP2020150157A (ja) * | 2019-03-14 | 2020-09-17 | 株式会社東芝 | 半導体装置 |
JP7193387B2 (ja) | 2019-03-14 | 2022-12-20 | 株式会社東芝 | 半導体装置 |
CN112531010A (zh) * | 2019-09-18 | 2021-03-19 | 株式会社东芝 | 半导体装置 |
JP2021048232A (ja) * | 2019-09-18 | 2021-03-25 | 株式会社東芝 | 半導体装置 |
US11043554B2 (en) | 2019-09-18 | 2021-06-22 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP7227110B2 (ja) | 2019-09-18 | 2023-02-21 | 株式会社東芝 | 半導体装置 |
CN112531010B (zh) * | 2019-09-18 | 2024-04-26 | 株式会社东芝 | 半导体装置 |
Also Published As
Publication number | Publication date |
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JP6519455B2 (ja) | 2019-05-29 |
US20170154955A1 (en) | 2017-06-01 |
DE102016218418A1 (de) | 2017-06-01 |
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