JP2020150157A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2020150157A JP2020150157A JP2019047140A JP2019047140A JP2020150157A JP 2020150157 A JP2020150157 A JP 2020150157A JP 2019047140 A JP2019047140 A JP 2019047140A JP 2019047140 A JP2019047140 A JP 2019047140A JP 2020150157 A JP2020150157 A JP 2020150157A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- electrode
- semiconductor
- region
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 285
- 239000012535 impurity Substances 0.000 claims description 29
- 230000007423 decrease Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 145
- 239000000969 carrier Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Abstract
Description
前記半導体層は、前記第1電極の上に設けられている。前記半導体層は、第1導電形の第1半導体領域と、第2導電形の第2半導体領域と、第2導電形の第3半導体領域と、第1導電形の第4半導体領域と、を有する。前記第1半導体領域は、前記第1電極と電気的に接続されている。前記第2半導体領域は、前記第1半導体領域の上に設けられている。前記第3半導体領域は、前記第1電極から前記半導体層へ向かう第1方向に垂直な第1面に沿って前記第2半導体領域の周りに設けられ、前記第2半導体領域と接し、前記第2半導体領域よりも低い第2導電形の不純物濃度を有する。前記第4半導体領域は、前記第1面に沿って前記第3半導体領域の周りに設けられ、前記第3半導体領域から離れ、前記第1半導体領域よりも高い第1導電形の不純物濃度を有する。前記第2電極は、前記第2半導体領域の上に設けられた第1電極部分と、前記第1面に沿って前記第1電極部分の周りに設けられた第2電極部分と、を有し、前記第2半導体領域と電気的に接続されている。前記第3電極は、前記第1面に沿って前記第2電極の周りに設けられ、前記第2電極から離れ、前記第4半導体領域と電気的に接続されている。前記半絶縁層は、前記第2半導体領域と前記第4半導体領域との間において前記半導体層の前記第1半導体領域と接する第1下面を有し、前記第2電極及び前記第3電極と電気的に接続されている。前記第1絶縁層は、前記第1方向において前記半導体層と前記第2電極部分との間に設けられ、少なくとも一部が前記半導体層と接する第2下面を有し、前記第2電極から前記第3電極へ向かう径方向における前記第2下面の第1端部が前記第3半導体領域の上に位置する。
図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
以下の説明及び図面において、n+、n、n−及びp+、p、p−の表記は、不純物濃度の相対的な高低を表す。すなわち、「+」が付されている表記は、「+」及び「−」のいずれも付されていない表記よりも不純物濃度が相対的に高く、「−」が付されている表記は、いずれも付されていない表記よりも不純物濃度が相対的に低いことを示す。これらの表記は、それぞれの領域にp形不純物とn形不純物の両方が含まれている場合には、それらの不純物が補償しあった後の正味の不純物濃度の相対的な高低を表す。
以下で説明する各実施形態について、各半導体領域のp形とn形を反転させて各実施形態を実施してもよい。
図2は、図1のII−II断面図である。
なお、図1では、半絶縁層30、第1絶縁層31、第2絶縁層32、第3絶縁層33、及び封止部50が省略されている。
図3に表したように、半絶縁層30は、X方向及びY方向に沿う第1下面S1を有する。第1下面S1は、n−形半導体領域11と接する。図3の例では、第1下面S1は、さらに、p−形ガードリング領域15a及びp−形ガードリング領域15bと接している。第1絶縁層31は、X方向及びY方向に沿う第2下面S2を有する。第2下面S2の少なくとも一部は、半導体層10のp形半導体領域12及びp−形リサーフ領域13と接する。上部電極22からEQPR電極23に向かう径方向における第2下面S2の第1端部E1は、p−形リサーフ領域13の上に設けられている。例えば、第1端部E1は、Z方向においてp−形リサーフ領域13から離れている。第1端部E1とp−形リサーフ領域13との間には、半絶縁層30の一部が設けられている。
半導体層10は、半導体材料として、シリコン、炭化シリコン、窒化ガリウム、またはガリウムヒ素を含む。半導体材料としてシリコンが用いられる場合、n形不純物として、ヒ素、リン、またはアンチモンを用いることができる。p形不純物として、ボロンを用いることができる。
下部電極21、上部電極22、及びEQPR電極23は、アルミニウムなどの金属を含む。
半絶縁層30は、窒化シリコンを含む。第1絶縁層31及び第2絶縁層32は、酸化シリコンを含む。第3絶縁層33は、窒化シリコンを含む。
封止部50は、ポリイミドなどの絶縁性樹脂を含む。
半絶縁層30における窒素の含有量を、C1Nとする。半絶縁層30におけるシリコンの含有量を、C1Siとする。第3絶縁層33における窒素の含有量を、C2Nとする。第3絶縁層33におけるシリコンの含有量を、C2Siとする。割合C1Si/C1Nは、0.75(化学量論比)よりも大きい。割合C1Si/C1Nから0.75を減じた値は、割合C2Si/C2Nから0.75を減じた値よりも大きい。上述した抵抗率を実現するためには、割合C1Si/C1Nは、1.0以上1.5以下であることが望ましい。割合C2Si/C2Nは、0.7以上0.95以下であることが望ましい。
下部電極21に対して上部電極22に内蔵電位以上の正の電圧を印加すると、上部電極22から下部電極21に順方向電流が流れる。上部電極22に対して下部電極21に正の電圧が印加されると、n−形半導体領域11とp形半導体領域12との間の界面から空乏層が広がり、下部電極21と上部電極22との間の通電が抑制される。
図4〜図6は、実施形態に係る半導体装置の製造工程を表す工程断面図である。
半導体基板Subを用意する。半導体基板Subは、n+形半導体領域17と、n+形半導体領域17の上に設けられたn−形半導体領域11と、を有する。n−形半導体領域11の表面に、p形不純物及びn形不純物を順次イオン注入し、図4(a)に表したように、p形半導体領域12、p−形リサーフ領域13、n+形半導体領域14、p−形ガードリング領域15a、及びp−形ガードリング領域15bを形成する。
図7は、参考例に係る半導体装置の一部を表す断面図である。
図7に表した参考例に係る半導体装置100rでは、第2下面S2の第1端部E1が、p−形リサーフ領域13よりも外周側に位置している。第1端部E1は、Z方向においてn−形半導体領域11と直接対向し、n−形半導体領域11の上面と接している。
図8に表した半導体装置110は、MOSFETである。半導体装置110は、半導体装置100に比べて、ゲート電極40、ゲート絶縁層41、及びプラグ45をさらに有する。また、半導体層10は、n+形半導体領域16(第6半導体領域)をさらに有する。
図9に表した半導体装置120は、IGBTである。半導体装置120は、n形半導体領域17に代えてp+形コレクタ領域18及びn形バッファ領域19を有する点で半導体装置110と異なる。
Claims (7)
- 第1電極と、
前記第1電極の上に設けられた半導体層であって、
前記第1電極と電気的に接続された第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられた第2導電形の第2半導体領域と、
前記第1電極から前記半導体層へ向かう第1方向に垂直な第1面に沿って前記第2半導体領域の周りに設けられ、前記第2半導体領域と接し、前記第2半導体領域よりも低い第2導電形の不純物濃度を有する第2導電形の第3半導体領域と、
前記第1面に沿って前記第3半導体領域の周りに設けられ、前記第3半導体領域から離れ、前記第1半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第4半導体領域と、
を有する前記半導体層と、
前記第2半導体領域の上に設けられた第1電極部分と、前記第1面に沿って前記第1電極部分の周りに設けられた第2電極部分と、を有し、前記第2半導体領域と電気的に接続された第2電極と、
前記第1面に沿って前記第2電極の周りに設けられ、前記第2電極から離れ、前記第4半導体領域と電気的に接続された第3電極と、
前記第2半導体領域と前記第4半導体領域との間において前記半導体層の前記第1半導体領域と接する第1下面を有し、前記第2電極及び前記第3電極と電気的に接続された半絶縁層と、
前記第1方向において前記半導体層と前記第2電極部分との間に設けられ、少なくとも一部が前記半導体層と接する第2下面を有し、前記第2電極から前記第3電極へ向かう径方向における前記第2下面の第1端部が前記第3半導体領域の上に位置する第1絶縁層と、
を備えた半導体装置。 - 前記第1端部と前記半導体層との間に前記半絶縁層の一部が設けられた請求項1記載の半導体装置。
- 前記第1面に沿って前記第3半導体領域の周りに設けられ、前記第2半導体領域よりも低い不純物濃度を有する第2導電形の第5半導体領域をさらに備え、
前記第5半導体領域は、前記第3半導体領域と前記第4半導体領域との間に位置し、前記第4半導体領域から離れ、前記半絶縁層の前記第1下面に接する請求項1又は2に記載の半導体装置。 - 前記第2電極部分の前記径方向における第2端部は、前記第1方向において前記第1絶縁層と重なり、
前記第1端部の前記径方向における位置と、前記第2端部の前記径方向における位置と、の間の距離は、15μm以下である請求項1〜3のいずれか1つに記載の半導体装置。 - 前記第1絶縁層は、前記径方向と交差し、且つ前記第1端部で前記第2下面と繋がる側面を有し、
前記第2下面と前記側面との間の角度は、50度以上である請求項1〜4のいずれか1つに記載の半導体装置。 - 前記第1下面及び前記第2下面のそれぞれは、前記第1方向に垂直な第2方向と、前記第1方向及び前記第2方向に垂直な第3方向と、に沿い、
前記第1下面の前記第1方向における位置と、前記第2下面の前記第1方向における位置と、の間の前記第1方向における距離は、50nm以上150nm以下である請求項1〜5のいずれか1つに記載の半導体装置。 - ゲート電極をさらに備え、
前記半導体層は、前記第2半導体領域の上に選択的に設けられた第1導電形の第6半導体領域をさらに有し、
前記第6半導体領域は、前記第2電極と電気的に接続され、
前記ゲート電極は、前記第1半導体領域の一部、前記第2半導体領域、及び前記第6半導体領域とゲート絶縁層を介して対向する請求項1〜6のいずれか1つに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019047140A JP7193387B2 (ja) | 2019-03-14 | 2019-03-14 | 半導体装置 |
CN201910739299.5A CN111697069B (zh) | 2019-03-14 | 2019-08-12 | 半导体装置 |
US16/552,699 US11056557B2 (en) | 2019-03-14 | 2019-08-27 | Semiconductor device including a semi-insulating layer contacting a first region at a first surface of a semiconductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019047140A JP7193387B2 (ja) | 2019-03-14 | 2019-03-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020150157A true JP2020150157A (ja) | 2020-09-17 |
JP7193387B2 JP7193387B2 (ja) | 2022-12-20 |
Family
ID=72424830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019047140A Active JP7193387B2 (ja) | 2019-03-14 | 2019-03-14 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11056557B2 (ja) |
JP (1) | JP7193387B2 (ja) |
CN (1) | CN111697069B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020192481A (ja) * | 2016-09-15 | 2020-12-03 | 株式会社三洋物産 | 遊技機 |
JP2020192479A (ja) * | 2016-09-15 | 2020-12-03 | 株式会社三洋物産 | 遊技機 |
JP7450516B2 (ja) | 2020-10-22 | 2024-03-15 | 三菱電機株式会社 | 電力用半導体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021079879A1 (ja) * | 2019-10-21 | 2021-04-29 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置および個片化方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254707A (ja) * | 1994-11-28 | 1995-10-03 | Toshiba Corp | 半導体装置 |
US20070222023A1 (en) * | 2006-03-14 | 2007-09-27 | Infineon Technologies Austria Ag | Integrated circuit having a semiconductor arrangement and method for producing it |
JP2012182302A (ja) * | 2011-03-01 | 2012-09-20 | Toyota Motor Corp | 半導体装置 |
JP2017098440A (ja) * | 2015-11-26 | 2017-06-01 | 三菱電機株式会社 | 半導体装置 |
JP2018029178A (ja) * | 2016-08-15 | 2018-02-22 | アーベーベー・シュバイツ・アーゲー | パワー半導体デバイスおよびこのようなパワー半導体デバイスの製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8680538B2 (en) * | 2008-02-12 | 2014-03-25 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device |
JP5691259B2 (ja) | 2010-06-22 | 2015-04-01 | 株式会社デンソー | 半導体装置 |
DE112011104713T5 (de) | 2011-01-14 | 2013-10-17 | Mitsubishi Electric Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung |
JP5728339B2 (ja) * | 2011-09-08 | 2015-06-03 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP6119564B2 (ja) * | 2013-11-08 | 2017-04-26 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP6309907B2 (ja) * | 2015-03-11 | 2018-04-11 | 株式会社東芝 | 半導体装置 |
JP6509673B2 (ja) * | 2015-08-10 | 2019-05-08 | 株式会社東芝 | 半導体装置 |
JP2017059600A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2017139292A (ja) | 2016-02-02 | 2017-08-10 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP6710589B2 (ja) * | 2016-06-20 | 2020-06-17 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
-
2019
- 2019-03-14 JP JP2019047140A patent/JP7193387B2/ja active Active
- 2019-08-12 CN CN201910739299.5A patent/CN111697069B/zh active Active
- 2019-08-27 US US16/552,699 patent/US11056557B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254707A (ja) * | 1994-11-28 | 1995-10-03 | Toshiba Corp | 半導体装置 |
US20070222023A1 (en) * | 2006-03-14 | 2007-09-27 | Infineon Technologies Austria Ag | Integrated circuit having a semiconductor arrangement and method for producing it |
JP2012182302A (ja) * | 2011-03-01 | 2012-09-20 | Toyota Motor Corp | 半導体装置 |
JP2017098440A (ja) * | 2015-11-26 | 2017-06-01 | 三菱電機株式会社 | 半導体装置 |
JP2018029178A (ja) * | 2016-08-15 | 2018-02-22 | アーベーベー・シュバイツ・アーゲー | パワー半導体デバイスおよびこのようなパワー半導体デバイスの製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020192481A (ja) * | 2016-09-15 | 2020-12-03 | 株式会社三洋物産 | 遊技機 |
JP2020192479A (ja) * | 2016-09-15 | 2020-12-03 | 株式会社三洋物産 | 遊技機 |
JP7450516B2 (ja) | 2020-10-22 | 2024-03-15 | 三菱電機株式会社 | 電力用半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7193387B2 (ja) | 2022-12-20 |
CN111697069B (zh) | 2023-09-08 |
CN111697069A (zh) | 2020-09-22 |
US20200295128A1 (en) | 2020-09-17 |
US11056557B2 (en) | 2021-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10784256B2 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP7193387B2 (ja) | 半導体装置 | |
JP4492735B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
US20160027906A1 (en) | Semiconductor device and method for fabricating semiconductor device | |
JP2017162909A (ja) | 半導体装置 | |
JP6378220B2 (ja) | 半導体装置 | |
US10978367B2 (en) | Semiconductor device and method for manufacturing the same | |
US10236339B2 (en) | Semiconductor device | |
JP6958093B2 (ja) | 半導体装置 | |
US10181519B2 (en) | Power semiconductor device | |
JP2006173437A (ja) | 半導体装置 | |
CN108110003B (zh) | 碳化硅半导体装置 | |
JP2011204935A (ja) | 半導体装置とその製造方法 | |
JP5233158B2 (ja) | 炭化珪素半導体装置 | |
JP2020025050A (ja) | 半導体装置 | |
JP2017103456A (ja) | 半導体装置 | |
JP7024273B2 (ja) | 半導体装置 | |
JP2018093177A (ja) | 炭化珪素半導体装置 | |
CN112713124A (zh) | 半导体装置 | |
JP7055725B2 (ja) | 半導体装置 | |
JP7422799B2 (ja) | パワー半導体デバイス、パッケージ構造および電子デバイス | |
TW201635474A (zh) | 半導體裝置 | |
JP6970068B2 (ja) | 半導体装置 | |
JP2013134998A (ja) | 半導体装置およびその製造方法 | |
GB2602637A (en) | Semiconductor device and method for designing thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210715 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220720 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220914 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221111 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7193387 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |