DE102017212818B4 - Halbleiteranordnung - Google Patents

Halbleiteranordnung Download PDF

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Publication number
DE102017212818B4
DE102017212818B4 DE102017212818.6A DE102017212818A DE102017212818B4 DE 102017212818 B4 DE102017212818 B4 DE 102017212818B4 DE 102017212818 A DE102017212818 A DE 102017212818A DE 102017212818 B4 DE102017212818 B4 DE 102017212818B4
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DE
Germany
Prior art keywords
semiconductor layer
layer
region
semiconductor
electrode
Prior art date
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Active
Application number
DE102017212818.6A
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German (de)
English (en)
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DE102017212818A1 (de
Inventor
Hidenori Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE102017212818A1 publication Critical patent/DE102017212818A1/de
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE102017212818.6A 2016-09-26 2017-07-26 Halbleiteranordnung Active DE102017212818B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016186769A JP6698487B2 (ja) 2016-09-26 2016-09-26 半導体装置
JP2016-186769 2016-09-26

Publications (2)

Publication Number Publication Date
DE102017212818A1 DE102017212818A1 (de) 2018-03-29
DE102017212818B4 true DE102017212818B4 (de) 2022-06-23

Family

ID=61564416

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102017212818.6A Active DE102017212818B4 (de) 2016-09-26 2017-07-26 Halbleiteranordnung

Country Status (4)

Country Link
US (1) US9960158B2 (enExample)
JP (1) JP6698487B2 (enExample)
CN (2) CN107871779A (enExample)
DE (1) DE102017212818B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7124339B2 (ja) * 2018-02-28 2022-08-24 富士電機株式会社 半導体装置
JP7115124B2 (ja) * 2018-08-03 2022-08-09 株式会社デンソー 半導体装置の製造方法
JP7718052B2 (ja) * 2020-06-17 2025-08-05 富士電機株式会社 半導体装置および半導体装置の製造方法
CN117410326A (zh) * 2023-11-22 2024-01-16 陕西华茂半导体科技有限公司 一种具有软恢复特性的rc-igbt器件及制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184486A (ja) 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP2010114248A (ja) 2008-11-06 2010-05-20 Toyota Central R&D Labs Inc 半導体装置
JP2013110373A (ja) 2011-08-02 2013-06-06 Rohm Co Ltd 半導体装置およびその製造方法
JP5309360B2 (ja) 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
US20150132895A1 (en) 2013-11-14 2015-05-14 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
JP2015211149A (ja) 2014-04-28 2015-11-24 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
US20160211258A1 (en) 2015-01-05 2016-07-21 Maxpower Semiconductor Inc. Reverse-Conducting Gated-Base Bipolar-Conduction Devices and Methods with Reduced Risk of Warping
WO2016129041A1 (ja) 2015-02-09 2016-08-18 三菱電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539360A (en) 1976-07-12 1978-01-27 Fuji System Drink flavor enhancing composition
EP2073271A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
JP5429175B2 (ja) * 2008-09-29 2014-02-26 日本電気株式会社 半導体受光素子およびその製造方法
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
WO2014156849A1 (ja) * 2013-03-25 2014-10-02 富士電機株式会社 半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184486A (ja) 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP5309360B2 (ja) 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
JP2010114248A (ja) 2008-11-06 2010-05-20 Toyota Central R&D Labs Inc 半導体装置
JP2013110373A (ja) 2011-08-02 2013-06-06 Rohm Co Ltd 半導体装置およびその製造方法
US20150132895A1 (en) 2013-11-14 2015-05-14 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
JP2015211149A (ja) 2014-04-28 2015-11-24 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
US20160211258A1 (en) 2015-01-05 2016-07-21 Maxpower Semiconductor Inc. Reverse-Conducting Gated-Base Bipolar-Conduction Devices and Methods with Reduced Risk of Warping
WO2016129041A1 (ja) 2015-02-09 2016-08-18 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
CN115064535A (zh) 2022-09-16
US20180090487A1 (en) 2018-03-29
JP6698487B2 (ja) 2020-05-27
JP2018056163A (ja) 2018-04-05
CN115064535B (zh) 2024-11-15
US9960158B2 (en) 2018-05-01
CN107871779A (zh) 2018-04-03
DE102017212818A1 (de) 2018-03-29

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