JP5867484B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 38
- 238000002513 implantation Methods 0.000 claims description 11
- 210000000746 body region Anatomy 0.000 description 29
- 238000007667 floating Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000011084 recovery Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
14:アノード領域
14a:高濃度アノード領域
14b:低濃度アノード領域
16:エミッタ領域
18:上部ボディ領域
20:n型フローティング領域
22:下部ボディ領域
30:ゲート電極
32:ゲート絶縁膜
34:絶縁膜
36:上部電極
38:下部電極
40:ドリフト領域
42:ダイオードバッファ領域
43:絶縁膜
44:カソード領域
46:IGBTバッファ領域
48:コレクタ領域
49:凹部
49a:底面
49b:側面
49c:表面
50:ダイオード領域
52:IGBT領域
Claims (1)
- ダイオードとIGBTが形成された半導体基板を有し、
前記半導体基板の表面に段差部が形成されていることで、前記半導体基板に薄部と厚部が形成されており、
前記半導体基板内に、
n型であり、前記薄部の前記表面に露出する範囲に形成されたダイオードのカソード領域と、
n型であり、カソード領域よりもn型不純物濃度が低く、前記薄部において前記カソード領域に対して前記半導体基板の裏面側に隣接する第1バッファ領域と、
p型であり、前記厚部において前記表面に露出する範囲に形成されているIGBTのコレクタ領域と、
n型であり、前記厚部において前記コレクタ領域に対して前記裏面側に隣接する第2バッファ領域と、
n型であり、前記第1バッファ領域及び前記第2バッファ領域よりもn型不純物濃度が低く、前記薄部及び前記厚部において前記第1バッファ領域及び前記第2バッファ領域に対して前記裏面側に隣接するドリフト領域、
が形成されている半導体装置の製造方法であって、
前記半導体基板の前記表面に前記段差部を形成することで、前記薄部及び前記厚部を形成する第1工程と、
前記段差部の側面に絶縁膜を形成する第2工程と、
前記絶縁膜を形成した後に、前記表面のうちの前記薄部と前記厚部に跨る範囲内にn型不純物を注入することによって第1バッファ領域及び第2バッファ領域を形成する第3工程、
を有し、
第3工程におけるn型不純物の注入深さが、段差部の深さよりも浅い製造方法。
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JP2013235779A JP5867484B2 (ja) | 2013-11-14 | 2013-11-14 | 半導体装置の製造方法 |
US14/537,148 US9245950B2 (en) | 2013-11-14 | 2014-11-10 | Method for fabricating an insulated gate bipolar transistor |
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JP2013235779A JP5867484B2 (ja) | 2013-11-14 | 2013-11-14 | 半導体装置の製造方法 |
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JP2015095618A JP2015095618A (ja) | 2015-05-18 |
JP5867484B2 true JP5867484B2 (ja) | 2016-02-24 |
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JP6392133B2 (ja) * | 2015-01-28 | 2018-09-19 | 株式会社東芝 | 半導体装置 |
TWI563570B (en) * | 2015-11-23 | 2016-12-21 | Pfc Device Holdings Ltd | Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT) |
CN106935498B (zh) * | 2015-12-30 | 2019-09-13 | 节能元件控股有限公司 | 绝缘栅双极晶体管的背面场栏的低温氧化层制作方法 |
JP6698487B2 (ja) | 2016-09-26 | 2020-05-27 | 三菱電機株式会社 | 半導体装置 |
US11393812B2 (en) * | 2017-12-28 | 2022-07-19 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JP7124339B2 (ja) * | 2018-02-28 | 2022-08-24 | 富士電機株式会社 | 半導体装置 |
JP7070303B2 (ja) * | 2018-10-04 | 2022-05-18 | 三菱電機株式会社 | 半導体装置 |
CN113644137B (zh) * | 2020-11-30 | 2024-01-30 | 湖南大学 | 一种大功率快恢复二极管结构 |
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US5258077A (en) * | 1991-09-13 | 1993-11-02 | Solec International, Inc. | High efficiency silicon solar cells and method of fabrication |
JP4167313B2 (ja) | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
JP4761644B2 (ja) | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
TWI288447B (en) * | 2005-04-12 | 2007-10-11 | Siliconware Precision Industries Co Ltd | Conductive bump structure for semiconductor device and fabrication method thereof |
JP2007184486A (ja) | 2006-01-10 | 2007-07-19 | Denso Corp | 半導体装置 |
WO2008081724A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
JP2010114248A (ja) * | 2008-11-06 | 2010-05-20 | Toyota Central R&D Labs Inc | 半導体装置 |
JP5920383B2 (ja) * | 2014-03-03 | 2016-05-18 | トヨタ自動車株式会社 | 半導体装置を製造する方法及び半導体装置 |
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US20150132895A1 (en) | 2015-05-14 |
JP2015095618A (ja) | 2015-05-18 |
US9245950B2 (en) | 2016-01-26 |
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