JP5636254B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5636254B2 JP5636254B2 JP2010235063A JP2010235063A JP5636254B2 JP 5636254 B2 JP5636254 B2 JP 5636254B2 JP 2010235063 A JP2010235063 A JP 2010235063A JP 2010235063 A JP2010235063 A JP 2010235063A JP 5636254 B2 JP5636254 B2 JP 5636254B2
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- 239000004065 semiconductor Substances 0.000 title claims description 132
- 239000012535 impurity Substances 0.000 claims description 55
- 230000002441 reversible effect Effects 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 419
- 238000011084 recovery Methods 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 19
- 230000036961 partial effect Effects 0.000 description 18
- 230000002829 reductive effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000007562 laser obscuration time method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
γp=(1+A・ND/NA)−1
と表される。
γp=Jp/(Jp+Jn)
と表すこともできる。
2 ドリフト層
3、3a ユニバーサルコンタクト層
3A アノード層(兼ユニバーサルコンタクト層)
21 低不純物濃度のP層
22 低不純物濃度のN層
23 狭N領域
31 高不純物濃度のP層
32 高不純物濃度のN層
31a ベースコンタクト層
32a ソース層
4a〜4f トレンチ
5、5a〜5f 埋め込み電極
6、6a〜6e 絶縁膜
7、71〜73 トレンチ間領域
8 ベース層
91 MOSFET
92 ダイオード
100 カソード電極
200 アノード電極
300 ゲート電極
400 層間絶縁膜
500 絶縁層
600 半導体層
700 ポリシリコン電極
1000 GaN基板
2000 AlGaN層
Claims (8)
- 第1導電型のカソード層と、
前記カソード層に接合して形成された第1導電型のドリフト層と、
前記ドリフト層の上面に、所定の間隔を隔てて配列された複数のトレンチと、
前記トレンチ内に絶縁膜を介して形成された埋め込み電極と、
隣り合う前記トレンチ間に形成されるトレンチ間領域と、
前記トレンチ間領域に接合して形成され、前記ドリフト層よりも高い不純物濃度を有する第1導電型層および第2導電型層を交互に配列してアノード電極にオーミック接続させたユニバーサルコンタクト層と
を備え、
前記トレンチ間領域の熱平衡状態のポテンシャルφaと前記ドリフト層の熱平衡状態のポテンシャルφbとの差(φb−φa)が、使用する半導体材料のバンドギャップに依存するビルトイン電圧よりも低い
ことを特徴とする半導体装置。 - 前記トレンチ間領域が、順方向バイアス時は前記アノード電極から流れる電流の通路となり、逆方向バイアス時は両側面の前記トレンチから延びる空乏層によりピンチオフする
ことを特徴とする請求項1に記載の半導体装置。 - 第1導電型のカソード層と、
前記カソード層に接合して、第1の第1導電型層および第1の第2導電型層が交互に配列されて形成されたドリフト層と、
前記第1の第1導電型層および前記第1の第2導電型層の配置位置に合わせて形成され、前記第1の第1導電型層よりも高い不純物濃度を有し、一端が前記第1導電型層に接合され他端がアノード電極に接合される第2の第1導電型層、および前記第1の第2導電型層よりも高い不純物濃度を有し、一端が前記第1の第2導電型層に接合され他端が前記アノード電極に接合される第2の第2導電型層が交互に配列されて、アノード電極にオーミック接続されてユニバーサルコンタクトを兼ねるアノード層と
を備えることを特徴とする半導体装置。 - 前記第2の第1導電型層の配列方向の幅が前記第2の第2導電型層の幅よりも狭く、
前記第1の第1導電型層の幅が前記第1の第2導電型層の幅と略等しい
ことを特徴とする請求項3に記載の半導体装置。 - 前記第2の第1導電型層の配列方向の幅が前記第2の第2導電型層の幅と略等しく、
前記アノード層との境界付近の前記第1の第1導電型層の配列方向の幅が前記第1の第2導電型層の幅よりも狭く、前記境界付近以外の前記第1の第1導電型層の配列方向の幅が前記第1の第2導電型層の幅と略等しい
ことを特徴とする請求項3に記載の半導体装置。 - 前記アノード層および前記ドリフト層の側面に、酸化膜を挟んで埋め込み電極が形成されている
ことを特徴とする請求項3乃至5のいずれか1項に記載の半導体装置。 - 前記埋め込み電極が、
前記アノード層の表面に接して形成されるアノード電極に接続されている
ことを特徴とする請求項6に記載の半導体装置。 - 前記埋め込み電極が、ゲート電極に接続されている
ことを特徴とする請求項6に記載の半導体装置。
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US12/968,188 US8860171B2 (en) | 2009-12-15 | 2010-12-14 | Semiconductor device having diode characteristic |
US14/487,975 US9590030B2 (en) | 2009-12-15 | 2014-09-16 | Semiconductor device having diode characteristic |
US15/416,215 US9768248B2 (en) | 2009-12-15 | 2017-01-26 | Semiconductor device having diode characteristic |
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CN103684002B (zh) * | 2012-09-24 | 2016-12-21 | 通用电气公司 | 能量转换系统 |
JP5939448B2 (ja) * | 2013-04-30 | 2016-06-22 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP6177154B2 (ja) | 2013-07-16 | 2017-08-09 | 株式会社東芝 | 半導体装置 |
EP2966683B1 (en) * | 2013-10-04 | 2020-12-09 | Fuji Electric Co., Ltd. | Semiconductor device |
KR20150076768A (ko) * | 2013-12-27 | 2015-07-07 | 삼성전기주식회사 | 전력 반도체 소자 |
JP2015008328A (ja) * | 2014-09-09 | 2015-01-15 | 株式会社東芝 | 半導体装置 |
JP6255111B2 (ja) * | 2014-09-17 | 2017-12-27 | 株式会社日立製作所 | 半導体装置、インバータモジュール、インバータ、鉄道車両、および半導体装置の製造方法 |
US9881997B2 (en) | 2015-04-02 | 2018-01-30 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
JP6574744B2 (ja) | 2016-09-16 | 2019-09-11 | 株式会社東芝 | 半導体装置 |
JP6678549B2 (ja) * | 2016-09-27 | 2020-04-08 | 株式会社 日立パワーデバイス | 半導体装置およびその製造方法、並びに電力変換システム |
JP6884803B2 (ja) * | 2017-01-17 | 2021-06-09 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6780777B2 (ja) | 2017-05-31 | 2020-11-04 | 富士電機株式会社 | 半導体装置 |
JP7371366B2 (ja) * | 2019-06-27 | 2023-10-31 | 富士通株式会社 | 半導体デバイス、及びこれを用いた無線受信器 |
TW202137333A (zh) * | 2020-03-24 | 2021-10-01 | 立錡科技股份有限公司 | 具有橫向絕緣閘極雙極性電晶體之功率元件及其製造方法 |
US11329150B2 (en) * | 2020-04-14 | 2022-05-10 | Nxp Usa, Inc. | Termination for trench field plate power MOSFET |
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JPH06177404A (ja) * | 1992-12-10 | 1994-06-24 | Hitachi Ltd | 半導体ダイオード |
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KR100363530B1 (ko) * | 1998-07-23 | 2002-12-05 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
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JP4166627B2 (ja) * | 2003-05-30 | 2008-10-15 | 株式会社デンソー | 半導体装置 |
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JP2006332607A (ja) * | 2005-04-28 | 2006-12-07 | Nec Electronics Corp | 半導体装置 |
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JP2009170629A (ja) * | 2008-01-16 | 2009-07-30 | Nec Electronics Corp | 半導体装置の製造方法 |
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JP5762689B2 (ja) * | 2010-02-26 | 2015-08-12 | 株式会社東芝 | 半導体装置 |
JP6177154B2 (ja) * | 2013-07-16 | 2017-08-09 | 株式会社東芝 | 半導体装置 |
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-
2014
- 2014-09-16 US US14/487,975 patent/US9590030B2/en not_active Expired - Fee Related
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US20150001668A1 (en) | 2015-01-01 |
US20170133456A1 (en) | 2017-05-11 |
US9590030B2 (en) | 2017-03-07 |
JP2011146682A (ja) | 2011-07-28 |
US8860171B2 (en) | 2014-10-14 |
US20110140180A1 (en) | 2011-06-16 |
US9768248B2 (en) | 2017-09-19 |
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