JP2011146682A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2011146682A JP2011146682A JP2010235063A JP2010235063A JP2011146682A JP 2011146682 A JP2011146682 A JP 2011146682A JP 2010235063 A JP2010235063 A JP 2010235063A JP 2010235063 A JP2010235063 A JP 2010235063A JP 2011146682 A JP2011146682 A JP 2011146682A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 239000012535 impurity Substances 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000002441 reversible effect Effects 0.000 claims description 50
- 239000010410 layer Substances 0.000 description 417
- 238000011084 recovery Methods 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 19
- 230000036961 partial effect Effects 0.000 description 18
- 230000002829 reductive effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000007562 laser obscuration time method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
【解決手段】N+型のカソード層1が、カソード電極100に接合して形成され低不純物濃度のN型のドリフト層2が、カソード層1に接合して形成され、複数のトレンチ4a、4bが、ドリフト層2の上面に所定の間隔を隔てて配列され、埋め込み電極5a、5bが、トレンチ4a、4bの内部に、絶縁膜6a、6bを介してそれぞれ形成され、トレンチ間領域7隣り合うトレンチ間に形成され、高不純物濃度のP+層31および高不純物濃度のN+層32を交互に配列してアノード電極200に接合させたユニバーサルコンタクト層3が、トレンチ間領域7に接合して形成される。トレンチ間領域7の熱平衡状態のポテンシャルが調整されて、ドリフト層2の熱平衡状態のポテンシャルとの差が、使用する半導体材料のバンドギャップに依存するビルトイン電圧よりも低い。
【選択図】 図2
Description
γp=(1+A・ND/NA)−1
と表される。
γp=Jp/(Jp+Jn)
と表すこともできる。
2 ドリフト層
3、3a ユニバーサルコンタクト層
3A アノード層(兼ユニバーサルコンタクト層)
21 低不純物濃度のP層
22 低不純物濃度のN層
23 狭N領域
31 高不純物濃度のP層
32 高不純物濃度のN層
31a ベースコンタクト層
32a ソース層
4a〜4f トレンチ
5、5a〜5f 埋め込み電極
6、6a〜6e 絶縁膜
7、71〜73 トレンチ間領域
8 ベース層
91 MOSFET
92 ダイオード
100 カソード電極
200 アノード電極
300 ゲート電極
400 層間絶縁膜
500 絶縁層
600 半導体層
700 ポリシリコン電極
1000 GaN基板
2000 AlGaN層
Claims (9)
- 主電極にオーミック接続され、熱平衡状態でのポテンシャルが外部から制御される第1の領域と、
前記第1の領域に接合して形成され、熱平衡状態でのポテンシャルが前記第1の領域と異なる第2の領域と
を備えることを特徴とする半導体装置。 - 第1導電型のカソード層と、
前記カソード層に接合して形成された低不純物濃度の第1導電型のドリフト層と、
前記ドリフト層の上面に、所定の間隔を隔てて配列された複数のトレンチと、
前記トレンチ内に絶縁膜を介して形成された埋め込み電極と、
隣り合う前記トレンチ間に形成されるトレンチ間領域と、
前記トレンチ間領域に接合して形成され、高不純物濃度の第1導電型層および高不純物濃度の第2導電型層を交互に配列してアノード電極に接合させたユニバーサルコンタクト層と
を備え、
前記トレンチ間領域の熱平衡状態のポテンシャルφaが、
前記トレンチ間領域の導電型または不純物濃度、前記埋め込み電極の材質、前記トレンチの間隔のいずれか、またはその組み合わせにより調整され、
前記ドリフト層の熱平衡状態のポテンシャルφbとの差(φb−φa)が、使用する半導体材料のバンドギャップに依存するビルトイン電圧よりも低い
ことを特徴とする半導体装置。 - 前記トレンチ間領域が、順方向バイアス時は前記アノード電極から流れる電流の通路となり、逆方向バイアス時は両側面の前記トレンチから延びる空乏層によりピンチオフする
ことを特徴とする請求項2に記載の半導体装置。 - 第1導電型のカソード層と、
前記カソード層に接合して、低不純物濃度の第1導電型層および低不純物濃度の第2導電型層が交互に配列されて形成されたドリフト層と、
前記ドリフト層の前記第1導電型層および前記第2導電型層の配置位置に合わせて形成され、一端が前記低不純物濃度の第1導電型層に接合され他端がアノード電極に接合される高不純物濃度の第1導電型層および一端が前記低不純物濃度の第2導電型層に接合され他端が前記アノード電極に接合される高不純物濃度の第2導電型層が交互に配列されて、アノード電極に対するユニバーサルコンタクトを兼ねるアノード層と
を備えることを特徴とする半導体装置。 - 前記高不純物濃度の第1導電型層の配列方向の幅が前記高不純物濃度の第2導電型層の幅よりも狭く、
前記低不純物濃度の第1導電型層の幅が前記低不純物濃度の第2導電型層の幅と略等しい
ことを特徴とする請求項4に記載の半導体装置。 - 前記高不純物濃度の第1導電型層の配列方向の幅が前記高不純物濃度の第2導電型層の幅と略等しく、
前記アノード層との境界付近の前記低不純物濃度の第1導電型層の配列方向の幅が前記低不純物濃度の第2導電型層の幅よりも狭く、前記境界付近以外の前記低不純物濃度の第1導電型層の配列方向の幅が前記低不純物濃度の第2導電型層の幅と略等しい
ことを特徴とする請求項4に記載の半導体装置。 - 前記アノード層および前記ドリフト層の側面に、酸化膜を挟んで埋め込み電極が形成されている
ことを特徴とする請求項4乃至6のいずれか1項に記載の半導体装置。 - 前記埋め込み電極が、
前記アノード層の表面に接して形成されるアノード電極に接続されている
ことを特徴とする請求項7に記載の半導体装置。 - 前記埋め込み電極が、ゲート電極に接続されている
ことを特徴とする請求項7に記載の半導体装置。
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US9590030B2 (en) | 2017-03-07 |
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