DE102014213565B4 - Halbleitervorrichtung und Verfahren zur Herstellung derselben - Google Patents

Halbleitervorrichtung und Verfahren zur Herstellung derselben Download PDF

Info

Publication number
DE102014213565B4
DE102014213565B4 DE102014213565.6A DE102014213565A DE102014213565B4 DE 102014213565 B4 DE102014213565 B4 DE 102014213565B4 DE 102014213565 A DE102014213565 A DE 102014213565A DE 102014213565 B4 DE102014213565 B4 DE 102014213565B4
Authority
DE
Germany
Prior art keywords
substrate
semiconductor device
hole
buffer layer
filler material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102014213565.6A
Other languages
German (de)
English (en)
Other versions
DE102014213565A1 (de
Inventor
c/o Mitsubishi Electric Corp. Okazaki Hiroyuki
c/o Mitsubishi Electric Corp. Kamo Yoshitaka
c/o Mitsubishi Electric Corp. Nogami Yoichi
c/o Mitsubishi Electric Corp. Koyama Hidetoshi
c/o Mitsubishi Electric Corp. Miyakuni Shinichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102014213565A1 publication Critical patent/DE102014213565A1/de
Application granted granted Critical
Publication of DE102014213565B4 publication Critical patent/DE102014213565B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE102014213565.6A 2013-09-24 2014-07-11 Halbleitervorrichtung und Verfahren zur Herstellung derselben Active DE102014213565B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013197261A JP6156015B2 (ja) 2013-09-24 2013-09-24 半導体装置及びその製造方法
JP2013-197261 2013-09-24

Publications (2)

Publication Number Publication Date
DE102014213565A1 DE102014213565A1 (de) 2015-03-26
DE102014213565B4 true DE102014213565B4 (de) 2021-02-04

Family

ID=52623790

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014213565.6A Active DE102014213565B4 (de) 2013-09-24 2014-07-11 Halbleitervorrichtung und Verfahren zur Herstellung derselben

Country Status (5)

Country Link
US (1) US9117896B2 (enExample)
JP (1) JP6156015B2 (enExample)
KR (1) KR101561519B1 (enExample)
CN (1) CN104465770A (enExample)
DE (1) DE102014213565B4 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016200825A1 (de) * 2016-01-21 2017-07-27 Robert Bosch Gmbh Vorrichtung und Verfahren zur Herstellung eines lateralen HEMTs
US10128364B2 (en) * 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
WO2017171870A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Gallium nitride transistor with underfill aluminum nitride for improved thermal and rf performance
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
CN106783993B (zh) * 2017-01-18 2019-08-02 电子科技大学 具有衬底内复合介质层结构的氮化镓异质结场效应管
JP6809615B2 (ja) * 2017-09-01 2021-01-06 三菱電機株式会社 電界効果トランジスタ
KR102327745B1 (ko) 2018-02-01 2021-11-17 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그의 제조 방법
JP7137947B2 (ja) * 2018-03-22 2022-09-15 ローム株式会社 窒化物半導体装置
US11158575B2 (en) * 2018-06-05 2021-10-26 Macom Technology Solutions Holdings, Inc. Parasitic capacitance reduction in GaN-on-silicon devices
US11482464B2 (en) * 2018-06-28 2022-10-25 Mitsubishi Electric Corporation Semiconductor device including a diamond substrate and method of manufacturing the semiconductor device
JP7248410B2 (ja) * 2018-11-01 2023-03-29 エア・ウォーター株式会社 化合物半導体装置、化合物半導体基板、および化合物半導体装置の製造方法
JP7091555B2 (ja) * 2019-04-01 2022-06-27 ヌヴォトンテクノロジージャパン株式会社 電力増幅装置
CN113939918A (zh) * 2019-06-18 2022-01-14 三菱电机株式会社 半导体装置及其制造方法
WO2022178870A1 (zh) * 2021-02-26 2022-09-01 华为技术有限公司 一种半导体器件、电子设备及半导体器件的制备方法
JP7632074B2 (ja) * 2021-05-24 2025-02-19 富士通株式会社 半導体装置及び半導体装置の製造方法
US12400927B2 (en) * 2022-06-22 2025-08-26 Globalfoundries U.S. Inc. High-mobility-electron transistors having heat dissipating structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206142A (ja) * 2008-02-26 2009-09-10 Rohm Co Ltd 電界効果トランジスタ
JP2010067662A (ja) * 2008-09-09 2010-03-25 Nec Corp 半導体装置及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274174A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 高周波半導体装置
JP2005243727A (ja) 2004-02-24 2005-09-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5487590B2 (ja) * 2008-10-20 2014-05-07 富士通株式会社 半導体装置及びその製造方法
JP2011060912A (ja) * 2009-09-08 2011-03-24 Toshiba Corp 半導体装置
JP5707786B2 (ja) * 2010-08-31 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
US8835986B2 (en) * 2011-06-22 2014-09-16 Imec Method for fabrication of III-nitride device and the III-nitride device thereof
JP5629714B2 (ja) 2012-03-19 2014-11-26 トヨタ自動車株式会社 半導体装置
KR101922123B1 (ko) * 2012-09-28 2018-11-26 삼성전자주식회사 반도체소자 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206142A (ja) * 2008-02-26 2009-09-10 Rohm Co Ltd 電界効果トランジスタ
JP2010067662A (ja) * 2008-09-09 2010-03-25 Nec Corp 半導体装置及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP 2010- 067 662 A (Maschinenübersetzung), AIPN (online) JPO [abgerufen am 7.10.2016] *

Also Published As

Publication number Publication date
CN104465770A (zh) 2015-03-25
JP6156015B2 (ja) 2017-07-05
JP2015065233A (ja) 2015-04-09
US9117896B2 (en) 2015-08-25
DE102014213565A1 (de) 2015-03-26
KR20150033538A (ko) 2015-04-01
US20150084103A1 (en) 2015-03-26
KR101561519B1 (ko) 2015-10-19

Similar Documents

Publication Publication Date Title
DE102014213565B4 (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
DE112014003481B4 (de) GaN-TRANSISTOREN MIT POLYSILIZIUMSCHICHTEN ZUR BILDUNG VON ZUSÄTZLICHEN KOMPONENTEN UND VERFAHREN ZU DEREN HERSTELLUNG
DE112006001893B4 (de) Normalerweise abgeschaltetes Gruppe-III-Nitrid-Halbleiter-Bauteil und Verfahren zur Herstellung desselben
DE102010047708B4 (de) Gruppe-III-V-Halbleiterbauteil mit Zwischenschichten zur Verspannungsentlastung und Verfahren zu dessen Herstellung
DE102009018054A1 (de) Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
DE102007038384A1 (de) Halbleitervorrichtung und zugehöriges Herstellungsverfahren
WO2014202409A1 (de) Transistor und verfahren zur herstellung eines transistors
DE102013108698B4 (de) III-Nitrid-Vorrichtung mit hoher Durchbruchspannung und Verfahren
DE112013001611T5 (de) Direktwachstum von Diamant in Durchkontakten auf der Rückseite von GaN HEMT Bauteilen
DE102012004085B4 (de) MOSFET-Vorrichtung mit dickem Grabenbodenoxid
DE102014209931A1 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
DE102014102467B4 (de) Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
DE102014107560A1 (de) Halbleiterbauelement und Verfahren
DE102016207054B4 (de) Feldeffekttransistor
DE102017215354B4 (de) Halbleiter und verfahren zum herstellen von halbleiterbauelementen
DE102014118834A1 (de) Halbleiterbauelement und Verfahren
DE102014104103A1 (de) Verfahren und Substrat für dicke III-N-Epitaxieschichten
DE102011088732B4 (de) Verfahren zum Herstellen eines Stöpsels in einem Halbleiterkörper
DE102017200167A1 (de) Halbleitervorrichtung und Verfahren der Fertigung derselben
DE112015005901T5 (de) Siliciumcarbid-Halbleiteranordnung und Verfahren zur Herstellung derselben
DE102019121417B4 (de) Halbleitervorrichtung und Hochspannungsvorrichtung mit einer zwischen zwei HEMT-Vorrichtungen als Diode geschalteten Transistorvorrichtung und Verfahren zum Ausbilden derselben
DE102014116834B4 (de) Halbleitereinzelchip aufweisend eine Maskierungsstruktur, die Teil von Chip-Vereinzelung-Schnittfugengebieten ist und diese definiert, Verfahren zum Ausbildung eines Halbleiterchips sowie zugehöriger Wafer
DE112018007145T5 (de) Halbleitereinheit
DE102015111838B4 (de) Halbleiterbauelement und Herstellungsverfahren dafür
DE102016217862B4 (de) Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R084 Declaration of willingness to licence
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029778000

Ipc: H10D0030470000