JP7248410B2 - 化合物半導体装置、化合物半導体基板、および化合物半導体装置の製造方法 - Google Patents
化合物半導体装置、化合物半導体基板、および化合物半導体装置の製造方法 Download PDFInfo
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- JP7248410B2 JP7248410B2 JP2018206717A JP2018206717A JP7248410B2 JP 7248410 B2 JP7248410 B2 JP 7248410B2 JP 2018206717 A JP2018206717 A JP 2018206717A JP 2018206717 A JP2018206717 A JP 2018206717A JP 7248410 B2 JP7248410 B2 JP 7248410B2
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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Description
1a Si基板の上面
1b Si基板の下面
3 SiC(炭化ケイ素)層(結晶層の一例)
3b SiC層の下面
5 AlN(窒化アルミニウム)バッファー層(Gaを含まない窒化物層の一例)
7 AlGaN(窒化アルミニウムガリウム)バッファー層7
9 GaN(窒化ガリウム)層
9a GaN層の凸部
10 Ga(ガリウム)窒化物層(ワイドギャップ半導体層の一例)
11 AlGaN層
13 ソース電極(第1の電極の一例)
15 ドレイン電極(第2の電極の一例)
17 ゲート電極(第3の電極の一例)
19 絶縁層
19a 絶縁層の開口部
21 穴(穴の一例)
22 分離溝
23 金属層(金属層の一例)
100 化合物半導体装置(化合物半導体装置の一例)
101 化合物半導体基板(化合物半導体基板の一例)
101a 中間体構造
RG1,RG2 素子分離領域
Claims (12)
- 化合物半導体装置であって、
平面的に見た場合に穴を取り囲む形状を有するSi基板と、
前記Si基板の上面に形成され、かつ前記穴を覆う、共有結合性の結晶層と、
前記結晶層の上面側に形成されたGaを含むワイドギャップ半導体層と、
前記ワイドギャップ半導体層の上面側に形成された第1、第2、および第3の電極とを備え、
前記第1の電極と前記第2の電極との間に流れる電流は、前記第3の電極に印加される電圧によって制御可能であり、
前記Si基板の上面に対して直交する方向から見て前記第1、第2、および第3の電極と重なる領域には、前記Si基板は存在せず、
前記ワイドギャップ半導体層の上面から前記Si基板に達する分離領域であって、前記化合物半導体装置と、前記化合物半導体装置と隣接する他の化合物半導体装置とを電気的に分離する分離領域をさらに備えた、化合物半導体装置。 - 前記結晶層は、ダイヤモンド構造、2H六方晶、3C立方晶、4H六方晶、6H六方晶、および15R菱面体晶のうち少なくともいずれかの結晶構造を有する、請求項1に記載の化合物半導体装置。
- 前記結晶層は、Cを含む結晶層またはBNよりなる、請求項1または2に記載の化合物半導体装置。
- 前記結晶層は、3C-SiCよりなる、請求項3に記載の化合物半導体装置。
- 前記結晶層の上面は(111)面である、請求項4に記載の化合物半導体装置。
- 前記結晶層は、N型のドーパントである窒素およびリン、P型のドーパントであるAlおよびB、ならびに半絶縁性を発現させるドーパントである遷移金属のうち少なくともいずれか1種類を不純物として含むSiCよりなり、かつ前記N型のドーパントの濃度を濃度N(個/cm3)、前記P型のドーパントの濃度を濃度P(個/cm3)、前記半絶縁性を発現させるドーパントの濃度を濃度I(個/cm3)とした場合に、前記濃度N、P、およびIの間に下記式(1)~(3)のいずれかの関係が成り立つ、請求項4または5に記載の化合物半導体装置
|N-P|≦1×1016 ・・・(1)
N+P<I<1×1021 ・・・(2)
1×1018≦|N-P|≦1×1021 かつ I<N+P ・・・(3) - 前記結晶層は、100Ω・cm以上または100mΩ・cm以下の比抵抗を有する、請求項1~6のいずれかに記載の化合物半導体装置。
- 前記穴の底部に形成された金属層をさらに備えた、請求項1~7のいずれかに記載の化合物半導体装置。
- 前記金属層と前記第1の電極とは電気的に接続される、請求項8に記載の化合物半導体装置。
- 前記結晶層と前記ワイドギャップ半導体層との間に形成された、Gaを含まない窒化物層をさらに備えた、請求項1~9のいずれかに記載の化合物半導体装置。
- 平面的に見た場合に複数の穴を取り囲む形状を有するSi基板と、
前記Si基板の上面に形成され、かつ前記複数の穴を覆う、共有結合性の結晶層とを備え、
前記複数の穴の各々の底部に露出した前記結晶層は破損しておらず、
前記結晶層の上面側に形成されたGaを含むワイドギャップ半導体層と、
前記複数の穴の各々に対応して前記ワイドギャップ半導体層の上面側に形成された第1、第2、および第3の電極とをさらに備え、
前記第1の電極と前記第2の電極との間に流れる電流は、前記第3の電極に印加される電圧によって制御可能であり、
前記Si基板の上面に対して直交する方向から見て前記第1、第2、および第3の電極と重なる領域には、前記Si基板は存在しない、化合物半導体基板。 - Si基板の上面に共有結合性の結晶層を形成する工程と、
前記結晶層の上面側にGaを含むワイドギャップ半導体層を形成する工程と、
前記Si基板の下面に穴を形成し、前記穴の底部に前記結晶層を露出させる工程と、
前記ワイドギャップ半導体層の上面側に第1、第2、および第3の電極を形成する工程とを備え、
前記第1の電極と前記第2の電極との間に流れる電流は、前記第3の電極に印加される電圧によって制御可能であり、
前記結晶層を露出させる工程は、前記Si基板の一部をエッチングする工程を含み、
前記結晶層を露出させる工程は、前記ワイドギャップ半導体層を形成する工程よりも後に行われる、化合物半導体装置の製造方法。
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CN201980072627.9A CN112997283A (zh) | 2018-11-01 | 2019-10-30 | 化合物半导体装置、化合物半导体基板以及化合物半导体装置的制造方法 |
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