JP2019186316A - トランジスタの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 132
- 230000004888 barrier function Effects 0.000 claims abstract description 122
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 48
- 150000004767 nitrides Chemical class 0.000 claims description 44
- 229910052742 iron Inorganic materials 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000013078 crystal Substances 0.000 abstract description 32
- 230000007547 defect Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 25
- 239000000203 mixture Substances 0.000 description 23
- 239000011777 magnesium Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000011701 zinc Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L29/66007—Multistep manufacturing processes
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
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Abstract
Description
はじめに、本発明の実施の形態1におけるトランジスタの製造方法について図1A〜図1Eを参照して説明する。
次に、本発明の実施の形態2におけるトランジスタの製造方法について図2A〜図2Dを参照して説明する。
Claims (4)
- 第1基板の上に窒化物半導体からなるバッファ層を形成する第1工程と、
窒化物半導体からなる第1バリア層、チャネル層、第2バリア層、第1接合層を、これらの順に主表面をIII族極性面とした状態で前記バッファ層の上に結晶成長する第2工程と、
第2基板の上に窒化物半導体からなる第2接合層を形成する第3工程と、
前記第1接合層と前記第2接合層と向かい合わせた状態で前記第1基板と前記第2基板とを貼り合わせる第4工程と、
前記バッファ層の一部または全部および前記第1基板を除去し、前記第2基板の上に、前記第2バリア層、前記チャネル層、前記第1バリア層が、これらの順に主表面をV族極性面とした状態で前記第2基板の上に形成された状態とする第5工程と、
前記第1基板を除去した後で、前記第2バリア層、前記チャネル層、前記第1バリア層からなるトランジスタを前記第2基板の上に形成する第6工程と
を備え、
前記チャネル層は、前記第1バリア層および前記第2バリア層よりバンドギャップの小さい材料から構成し、
前記チャネル層は、GaN、InGaN、AlGaN、InNの少なくとも1つから構成し、
前記第1バリア層は、AlGaN、InAlN、InAlGaN、AlN、GaNの少なくとも1つから構成し、
前記第2バリア層は、AlGaN、InAlN、InAlGaN、AlN、GaNの少なくとも1つから構成し、
前記第1接合層および前記第2接合層の少なくとも一方は、C、Fe、ZnまたはMgがドープされて高抵抗化またはp型化された窒化物半導体から構成する
ことを特徴とするトランジスタの製造方法。 - 第1基板の上に窒化物半導体からなるバッファ層を形成する第1工程と、
窒化物半導体からなる第1バリア層、チャネル層、第2バリア層、第1接合層を、これらの順に主表面をIII族極性面とした状態で前記バッファ層の上に結晶成長する第2工程と、
前記第1接合層と第2基板と向かい合わせた状態で前記第1基板と前記第2基板とを貼り合わせる第3工程と、
前記バッファ層の一部または全部および前記第1基板を除去し、前記第2基板の上に、前記第2バリア層、前記チャネル層、前記第1バリア層が、これらの順に主表面をV族極性面とした状態で前記第2基板の上に形成された状態とする第4工程と、
前記第1基板を除去した後で、前記第2バリア層、前記チャネル層、前記第1バリア層からなるトランジスタを前記第2基板の上に形成する第5工程と
を備え、
前記チャネル層は、前記第1バリア層および前記第2バリア層よりバンドギャップの小さい材料から構成し、
前記チャネル層は、GaN、InGaN、AlGaN、InNの少なくとも1つから構成し、
前記第1バリア層は、AlGaN、InAlN、InAlGaN、AlN、GaNの少なくとも1つから構成し、
前記第2バリア層は、AlGaN、InAlN、InAlGaN、AlN、GaNの少なくとも1つから構成し、
前記第1接合層は、C、Fe、ZnまたはMgがドープされて高抵抗化またはp型化された窒化物半導体から構成する
ことを特徴とするトランジスタの製造方法。 - 請求項2記載のトランジスタの製造方法において、
前記第1基板と前記第2基板とを貼り合わせる前に、前記第2基板の上に窒化物半導体からなる第2接合層を形成する第6工程をさらに備え、
前記第3工程では、前記第1接合層と前記第2基板と向かい合わせた状態で前記第1基板と前記第2基板とを貼り合わせる
ことを特徴とするトランジスタの製造方法。 - 請求項3記載のトランジスタの製造方法において、
前記第2接合層は、C、Fe、ZnまたはMgがドープされて高抵抗化またはp型化された窒化物半導体から構成する
ことを特徴とするトランジスタの製造方法。
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US16/981,603 US11430875B2 (en) | 2018-04-05 | 2019-03-27 | Method for manufacturing transistor |
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DE112020004851T5 (de) | 2019-10-09 | 2022-07-07 | Denso Corporation | Abschätzungsvorrichtung |
WO2023276275A1 (ja) * | 2021-06-30 | 2023-01-05 | ソニーグループ株式会社 | 半導体装置、半導体モジュール、および無線通信装置 |
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JP2004342810A (ja) * | 2003-05-15 | 2004-12-02 | Fujitsu Ltd | 化合物半導体装置 |
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JP2014022752A (ja) * | 2012-07-23 | 2014-02-03 | Samsung Electronics Co Ltd | 窒化物系半導体素子及びその製造方法 |
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DE112020004851T5 (de) | 2019-10-09 | 2022-07-07 | Denso Corporation | Abschätzungsvorrichtung |
WO2023276275A1 (ja) * | 2021-06-30 | 2023-01-05 | ソニーグループ株式会社 | 半導体装置、半導体モジュール、および無線通信装置 |
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US20210020760A1 (en) | 2021-01-21 |
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