JP2015135946A - 窒化物半導体素子及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 150000004767 nitrides Chemical class 0.000 title abstract description 22
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 254
- 239000000203 mixture Substances 0.000 claims abstract description 94
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 41
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 13
- 238000011065 in-situ storage Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 2
- 229910002601 GaN Inorganic materials 0.000 description 83
- 230000008859 change Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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Abstract
Description
120 AlGaN多重層
120_1〜120_n AlGaN層
130 GaNチャネル層
140 AlGaN障壁層
150 SixNy層
Claims (20)
- バッファ層と、
前記バッファ層上に形成されたAlGaN多重層と、
前記AlGaN多重層上に形成されたGaNチャネル層と、
前記GaNチャネル層上に形成されたAlGaN障壁層とを含み、
前記AlGaN多重層のAl組成は、前記AlGaN多重層の積層方向に従って変化することを特徴とする半導体素子。 - 前記AlGaN多重層は、Al組成が異なる複数のAlGaN層を含み、
前記複数のAlGaN層の数は、1〜30であることを特徴とする請求項1に記載の半導体素子。 - 前記AlGaN多重層のAl組成は、1%〜70%であることを特徴とする請求項1に記載の半導体素子。
- 前記AlGaN多重層のAl組成は、前記AlGaN多重層の積層方向に従って増加又は減少することを特徴とする請求項1に記載の半導体素子。
- 前記AlGaN多重層のAl組成は、前記AlGaN多重層の積層方向に従って増加し、特定のAl組成から前記AlGaN多重層の積層方向に従って減少することを特徴とする請求項1に記載の半導体素子。
- 前記AlGaN多重層の厚さは、1nm〜300nmであることを特徴とする請求項1に記載の半導体素子。
- 前記AlGaN障壁層上に形成されたSixNy(0≦x,y≦1)層をさらに含むことを特徴とする請求項1に記載の半導体素子。
- 前記SixNy層のSi組成のxは、0.01〜0.8であることを特徴とする請求項7に記載の半導体素子。
- 前記SixNy層の厚さは、1nm〜100nmであることを特徴とする請求項7に記載の半導体素子。
- 前記SixNy層は、前記AlGaN障壁層上にインサイチュ(In-Situ)で成長したものであることを特徴とする請求項7に記載の半導体素子。
- 前記GaNチャネル層には、Mg、C及びFeの少なくとも1つのドーパントがドーピングされ、
前記少なくとも1つのドーパントの濃度は、3×1017/cm3〜1×1020/cm3であることを特徴とする請求項1に記載の半導体素子。 - 前記AlGaN障壁層の厚さは、5nm〜50nmであり、
前記AlGaN障壁層のAl組成は、10%〜30%であることを特徴とする請求項1に記載の半導体素子。 - 前記バッファ層は、基板上に形成され、
前記基板は、Si、SiC、サファイア及びGaNの少なくとも1つからなることを特徴とする請求項1に記載の半導体素子。 - 基板上にバッファ層を形成する段階と、
前記バッファ層上にAlGaN多重層を形成する段階と、
前記AlGaN多重層上にGaNチャネル層を形成する段階と、
前記GaNチャネル層上にAlGaN障壁層を形成する段階とを含み、
前記AlGaN多重層のAl組成は、前記AlGaN多重層の積層方向に従って増加することを特徴とする半導体素子の製造方法。 - 前記AlGaN多重層は、Al組成が異なる複数のAlGaN層を含み、
前記複数のAlGaN層の数は、1〜30であることを特徴とする請求項14に記載の半導体素子の製造方法。 - 前記AlGaN多重層のAl組成は、前記AlGaN多重層の積層方向に従って1%〜70%増加し、
前記AlGaN多重層の厚さは、1nm〜300nmであることを特徴とする請求項14に記載の半導体素子の製造方法。 - 前記AlGaN障壁層上にSixNy(0≦x,y≦1)層を形成する段階をさらに含むことを特徴とする請求項14に記載の半導体素子の製造方法。
- 前記SixNy層のSi組成のxは、0.01〜0.8であり、
前記SixNy層の厚さは、1nm〜100nmであることを特徴とする請求項17に記載の半導体素子の製造方法。 - 前記SixNy層は、前記AlGaN障壁層上にインサイチュ(In-Situ)で成長したものであることを特徴とする請求項17に記載の半導体素子の製造方法。
- 前記バッファ層、前記AlGaN多重層、前記GaNチャネル層及び前記AlGaN障壁層の少なくとも1つは、有機金属気相成長法(MOCVD)、分子線エピタキシー法(MBE)、ハイドライド気相成長法(HVPE)、プラズマ化学気相成長法(PECVD)、スパッタリング及び原子層堆積法(ALD)の少なくとも1つにより形成されることを特徴とする請求項14に記載の半導体素子の製造方法。
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Cited By (5)
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WO2018051772A1 (ja) * | 2016-09-14 | 2018-03-22 | スタンレー電気株式会社 | Iii族窒化物積層体、及び該積層体を有する半導体デバイス |
WO2018180021A1 (ja) * | 2017-03-31 | 2018-10-04 | 富士通株式会社 | 窒化物半導体装置及びその製造方法 |
JP2018536285A (ja) * | 2015-10-30 | 2018-12-06 | タレス | 最適化された性能及び利得を有する電界効果トランジスタ |
JP2020505767A (ja) * | 2017-01-18 | 2020-02-20 | クロミス,インコーポレイテッド | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
WO2023153154A1 (ja) * | 2022-02-10 | 2023-08-17 | 日本碍子株式会社 | Iii族元素窒化物半導体基板、エピタキシャル基板および機能素子 |
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KR101259126B1 (ko) * | 2011-07-25 | 2013-04-26 | 엘지전자 주식회사 | 질화물계 반도체 이종접합 반도체 소자 및 그 제조방법 |
TWI671801B (zh) * | 2018-08-01 | 2019-09-11 | 環球晶圓股份有限公司 | 磊晶結構 |
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JP2020505767A (ja) * | 2017-01-18 | 2020-02-20 | クロミス,インコーポレイテッド | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
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Also Published As
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US20150200257A1 (en) | 2015-07-16 |
US9252220B2 (en) | 2016-02-02 |
KR20150085724A (ko) | 2015-07-24 |
EP2897173A1 (en) | 2015-07-22 |
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