JP5919703B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5919703B2 JP5919703B2 JP2011213733A JP2011213733A JP5919703B2 JP 5919703 B2 JP5919703 B2 JP 5919703B2 JP 2011213733 A JP2011213733 A JP 2011213733A JP 2011213733 A JP2011213733 A JP 2011213733A JP 5919703 B2 JP5919703 B2 JP 5919703B2
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- 239000004065 semiconductor Substances 0.000 title claims description 137
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 213
- 239000010410 layer Substances 0.000 claims description 200
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 80
- 229910052710 silicon Inorganic materials 0.000 claims description 80
- 239000010703 silicon Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 58
- 150000004767 nitrides Chemical class 0.000 claims description 33
- 239000002346 layers by function Substances 0.000 claims description 32
- 230000000694 effects Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 61
- 230000005684 electric field Effects 0.000 description 27
- 239000013078 crystal Substances 0.000 description 21
- 230000015556 catabolic process Effects 0.000 description 17
- 239000012535 impurity Substances 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明の第1の実施形態に係る半導体装置1は、図1に示すように、シリコン基板10と、シリコン基板10上に隣接するように配置された、不純物としてシリコンがドープされた窒化アルミニウム層(以下において、「SiドープAlN層」という。)20と、SiドープAlN層20上に配置された、複数の窒化物半導体膜31が積層された構造のバッファ層30と、バッファ層30上に配置された、窒化物半導体からなる半導体機能層40とを備える。
本発明の第2の実施形態に係る半導体装置1では、図9に示すように、SiドープAlN層20が、第1の濃度でシリコンがドープされた第1の窒化アルミニウム(AlN)領域201と、第1の濃度よりも低い第2の濃度でシリコンがドープされた第2の窒化アルミニウム(AlN)領域202とを有する。即ち、SiドープAlN層20が、ドープされたSiの濃度が異なる複数の領域が積層された構造を有することが、図1に示した半導体装置1と異なる点である。その他の構成については、第1の実施形態と同様である。
図13に示すように、SiドープAlN層20が、第1のAlN領域201と第2のAlN領域202との間に配置された中間窒化アルミニウム(AlN)領域203を備える構造であってもよい。中間AlN領域203には、第1のAlN領域201のSi濃度よりも低く、且つ第2のAlN領域202のSi濃度よりも高い中間濃度でシリコンがドープされている。
10…シリコン基板
20…SiドープAlN層
20A…AlN層
21…ピット
30…バッファ層
31…窒化物半導体膜
40…半導体機能層
41…キャリア走行層
42…キャリア供給層
43…二次元キャリアガス層
51…ソース電極
52…ドレイン電極
53…ゲート電極
61…アノード電極
62…カソード電極
201…第1のAlN領域
202…第2のAlN領域
203…中間AlN領域
Claims (10)
- シリコン基板と、
前記シリコン基板上に配置された、不純物としてシリコンが全面にドープされた領域を有する窒化アルミニウム層と、
前記窒化アルミニウム層上に配置された、複数の窒化物半導体膜が積層された構造のバッファ層と、
前記バッファ層上に配置された、窒化物半導体からなる半導体機能層と
を備え、
前記窒化アルミニウム層が、
シリコンがドープされた第1の窒化アルミニウム領域と、
前記第1の窒化アルミニウム領域よりもシリコン濃度が低い第2の窒化アルミニウム領域と
を積層した構造であって、複数の前記第1の窒化アルミニウム領域と複数の前記第2の窒化アルミニウム領域とが交互に積層された構造であることを特徴とする半導体装置。 - 前記シリコン基板に接して前記第1の窒化アルミニウム領域が配置されていることを特徴とする請求項1に記載の半導体装置。
- 前記シリコン基板に接して前記第2の窒化アルミニウム領域が配置されていることを特徴とする請求項1に記載の半導体装置。
- 前記窒化アルミニウム層のシリコン濃度が最大の領域におけるシリコン濃度が、1×1018cm-3以上且つ1×1021cm-3以下であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記窒化アルミニウム層の膜厚が20nm以上且つ300nm以下であることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記バッファ層が、互いに組成が異なる複数のAlXGa1-XN(0≦X≦1)膜が隣接して配置された多層膜が周期的に積層された構造を有することを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
- 前記半導体機能層上に互いに離間して配置された第1及び第2の主電極を更に備え、前記半導体機能層が、
キャリア走行層と、
前記キャリア走行層よりもバンドギャップが大きいキャリア供給層と
を備えることを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置。 - 複数の前記第1の窒化アルミニウム領域にそれぞれドープされたシリコンの濃度が互いに異なることを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 複数の前記第2の窒化アルミニウム領域にそれぞれドープされたシリコンの濃度が互いに異なることを特徴とする請求項1乃至8のいずれか1項に記載の半導体装置。
- キャリアのトンネル効果によって前記第2の窒化アルミニウム領域の膜厚方向に前記キャリアが移動することを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011213733A JP5919703B2 (ja) | 2011-06-24 | 2011-09-29 | 半導体装置 |
US13/492,151 US8704207B2 (en) | 2011-06-24 | 2012-06-08 | Semiconductor device having nitride semiconductor layer |
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JP2011140256 | 2011-06-24 | ||
JP2011140256 | 2011-06-24 | ||
JP2011213733A JP5919703B2 (ja) | 2011-06-24 | 2011-09-29 | 半導体装置 |
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JP2013030725A JP2013030725A (ja) | 2013-02-07 |
JP5919703B2 true JP5919703B2 (ja) | 2016-05-18 |
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US (1) | US8704207B2 (ja) |
JP (1) | JP5919703B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102738334B (zh) * | 2012-06-19 | 2015-07-08 | 厦门市三安光电科技有限公司 | 具有电流扩展层的发光二极管及其制作方法 |
US9142407B2 (en) | 2013-01-16 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having sets of III-V compound layers and method of forming the same |
JP6226627B2 (ja) * | 2013-08-09 | 2017-11-08 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体エピタキシャル基板およびその製造方法 |
JP6244769B2 (ja) * | 2013-09-19 | 2017-12-13 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
KR20160063360A (ko) * | 2013-09-24 | 2016-06-03 | 실트로닉 아게 | 반도체 웨이퍼 및 반도체 웨이퍼의 제조 방법 |
EP3190608B1 (en) * | 2014-09-02 | 2020-11-25 | Flosfia Inc. | Laminated structure and method for manufacturing same |
CN104538518B (zh) * | 2015-01-12 | 2017-07-14 | 厦门市三安光电科技有限公司 | 氮化物发光二极管 |
CN104600165B (zh) * | 2015-02-06 | 2018-03-23 | 安徽三安光电有限公司 | 一种氮化物发光二极体结构 |
CN106025026B (zh) * | 2016-07-15 | 2018-06-19 | 厦门乾照光电股份有限公司 | 一种用于发光二极管的AlN缓冲层及其制作方法 |
DE102018108604A1 (de) * | 2018-04-11 | 2019-10-17 | Aixtron Se | Nukleationsschicht-Abscheideverfahren |
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US5923690A (en) * | 1996-01-25 | 1999-07-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
GB9913950D0 (en) * | 1999-06-15 | 1999-08-18 | Arima Optoelectronics Corp | Unipolar light emitting devices based on iii-nitride semiconductor superlattices |
JP2003059948A (ja) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
JP2003142729A (ja) * | 2001-11-05 | 2003-05-16 | Sanken Electric Co Ltd | 半導体発光素子 |
JP2006222361A (ja) * | 2005-02-14 | 2006-08-24 | Hitachi Cable Ltd | 窒化物半導体結晶及びその製造方法 |
JP2007250721A (ja) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | 窒化物半導体電界効果トランジスタ構造 |
JP5453780B2 (ja) * | 2008-11-20 | 2014-03-26 | 三菱化学株式会社 | 窒化物半導体 |
JP5706102B2 (ja) * | 2010-05-07 | 2015-04-22 | ローム株式会社 | 窒化物半導体素子 |
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US8704207B2 (en) | 2014-04-22 |
JP2013030725A (ja) | 2013-02-07 |
US20120326160A1 (en) | 2012-12-27 |
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