JP2013123047A - エンハンスメントモードiii−窒化物デバイスおよびその製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 68
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 202
- 230000004888 barrier function Effects 0.000 description 19
- 229910002704 AlGaN Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
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- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical group [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】それぞれの層がIII−窒化物材料を含む、基板上の層のスタック201’と、III窒化物層の上層203を覆い、これと接続する高温シリコン窒化物を含むパッシベーション層301とを含む基板を提供する工程であって、HTシリコン窒化物はMOCVDまたはLPVCDまたは他の均等な技術により、450℃より高い温度で形成される工程と、ゲート領域のみにおいて、パッシベーション層を除去することにより、リセスゲート領域を形成し、これにより下にある上層203を露出させる工程と、少なくともリセスゲート領域の中にpドープGaN層302を形成して、これによりリセスゲート領域を少なくとも部分的に充填する工程と、ゲートコンタクトおよびソース/ドレインコンタクトを形成する工程と、を含む方法。
【選択図】図2
Description
AlGaNに対して選択的なp−GaNのエッチングは、困難であるとともに、ゲートとドレインとの間の表面をプラズマエッチングに晒す。この領域は、このエッチング工程後にはパッシベートされず、表面をパッシベートするために高温誘電体堆積を用いることを困難にする。結果として、このデバイス構造はドレインラグの影響を受ける。「ドレインラグ(drain-lag)」の文言は、ドレイン−ソース電圧のパルスが与えられた場合の、ドレイン電流の遅い過渡応答を記載するのに用いられる。
また、記載や請求の範囲中の、上、下、上に、下に等の用語は、記載目的のために使用され、相対的な位置を示すものではない。そのように使用される用語は、適当な状況下で入替え可能であり、ここに記載された発明の具体例は、ここに記載や図示されたものと異なる位置でも操作できる。
更に、「好ましくは」と述べられた多くの具体例は、本発明の範囲を限定するよりもむしろ、本発明が実行される例示的方法として解釈されるべきである。
Claims (15)
- エンハンスメントモードIII−窒化物HEMTの製造方法であって、
a.それぞれの層がIII−窒化物材料を含む、基板上の層のスタックと、III窒化物層の上層(203、204)を覆い、これと接続する高温(HT)シリコン窒化物を含むパッシベーション層(301)と、を含む基板(101)を提供する工程であって、HTシリコン窒化物はMOCVDまたはLPVCDまたは他の均等な技術により、450℃より高い温度、より好適には550℃より高い温度、更に好適には700℃より高い温度で形成される工程と、
b.ゲート領域のみにおいて、パッシベーション層を実質的に完全に除去することにより、リセスゲート領域を形成し、これにより下にある上層を露出させる工程と、
c.少なくともリセスゲート領域の中にpドープGaN層を形成して、これによりリセスゲート領域を少なくとも部分的に充填する工程と、
d.ゲート領域中にゲートコンタクトを形成し、パッシベーション層を通るソース/ドレインコンタクトを形成する工程と、を含む製造方法。 - パッシベーション層は、III−窒化物層のスタックとともにその場で形成される請求項1に記載の方法。
- pドープGaN層は、リセスゲート領域中にのみ選択エピタキシャル成長で形成される請求項1または2に記載の方法。
- pドープGaN層は、リセスゲート領域の中と、およびパッシベーション層の上の双方に非選択的堆積で形成され、続く工程においてパッシベーション層から選択的に除去される請求項1または2に記載の方法。
- パッシベーション層の上に形成されたpドープGaN層は、多結晶材料である請求項4に記載の方法。
- パッシベーション層の膜厚は、5nmと300nmの間である請求項1〜5のいずれかに記載の方法。
- リセスゲート領域中のp−GaN層の膜厚は、5nmと300nmとの間である請求項1〜6のいずれかに記載の方法。
- p−GaN層のドーピング濃度は、1×1017cm−3より高い請求項1〜7のいずれかに記載の方法。
- pドーパントは、Mg、Be、Zrまたはそれらの組合せを含む請求項1〜8のいずれかに記載の方法。
- エンハンスメントモードIII−窒化物HEMTであって、
それぞれの層がIII−窒化物材料を含む、基板上の層のスタックと、III−窒化物層のスタックの上層(203、204)を覆い、これと接続する高温(HT)シリコン窒化物を含むパッシベーション層(301)と、を含む基板(101)と、
III−窒化物層のスタックの上層(203、204)が底部に露出する、パッシベーション層を通るリセスゲート領域と、
リセスゲート領域を少なくとも部分的に充填するpドープGaN層であって、pドープGaN層は、リセスゲート領域中のIII−窒化物層のスタックの上層を覆い、これと接続するpドープGaN層と、
パッシベーション層を通るように形成されたソース/ドレインコンタクトと、を含み、
リセスゲート領域およびソース/ドレインコンタクトを除く全ての場所で、パッシベーション層はIII−窒化物層のスタックの上層を覆うデバイス。 - パッシベーション層は、MOICVDまたはLPCVDで形成され、約3〜8%のH含有量と約2.9〜3.1g/cm3の密度を有する高温(HT)シリコン窒化物を含む請求項10に記載のデバイス。
- パッシベーション層の膜厚は、5nmと300nmの間である請求項10または11に記載のデバイス。
- リセスゲート領域中のp−GaN層の膜厚は、5nmと300nmとの間である請求項10〜12のいずれかに記載のデバイス。
- p−GaN層のドーピング濃度は、1×1017cm−3より高い請求項10〜13のいずれかに記載のデバイス。
- pドーパントは、Mg、Be、Zrまたはそれらの組合せを含む請求項10〜14のいずれかに記載のデバイス。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015135946A (ja) * | 2014-01-16 | 2015-07-27 | エルジー エレクトロニクス インコーポレイティド | 窒化物半導体素子及びその製造方法 |
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Also Published As
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US20150318374A1 (en) | 2015-11-05 |
EP2602827B1 (en) | 2016-02-03 |
US20130153923A1 (en) | 2013-06-20 |
EP2602827A2 (en) | 2013-06-12 |
EP2602827A3 (en) | 2013-08-21 |
US9425281B2 (en) | 2016-08-23 |
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