JP6945119B2 - 結晶性積層構造体およびその製造方法 - Google Patents

結晶性積層構造体およびその製造方法 Download PDF

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JP6945119B2
JP6945119B2 JP2014239389A JP2014239389A JP6945119B2 JP 6945119 B2 JP6945119 B2 JP 6945119B2 JP 2014239389 A JP2014239389 A JP 2014239389A JP 2014239389 A JP2014239389 A JP 2014239389A JP 6945119 B2 JP6945119 B2 JP 6945119B2
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laminated structure
crystal
crystalline
crystalline laminated
crystal growth
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JP2016100592A5 (enExample
JP2016100592A (ja
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章夫 高塚
章夫 高塚
真也 織田
真也 織田
俊実 人羅
俊実 人羅
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Flosfia Inc
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  • Crystals, And After-Treatments Of Crystals (AREA)
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JP2014239389A 2014-11-26 2014-11-26 結晶性積層構造体およびその製造方法 Active JP6945119B2 (ja)

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US10128350B2 (en) * 2016-09-22 2018-11-13 Iqe Plc Integrated epitaxial metal electrodes
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
JP7163540B2 (ja) * 2017-08-21 2022-11-01 株式会社Flosfia 結晶膜の製造方法
CN109423694B (zh) 2017-08-21 2022-09-09 株式会社Flosfia 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法
JP7741487B2 (ja) * 2018-06-26 2025-09-18 株式会社Flosfia 結晶性酸化物膜
CN112368429A (zh) * 2018-06-26 2021-02-12 株式会社Flosfia 成膜方法及结晶性层叠结构体
JP6909191B2 (ja) 2018-09-27 2021-07-28 信越化学工業株式会社 積層体、半導体装置及び積層体の製造方法
JP7315136B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物半導体
JP7315137B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物膜
JP2020186153A (ja) 2019-05-15 2020-11-19 トヨタ自動車株式会社 半導体層の成長方法、半導体装置の製造方法、及び、バルク結晶の製造方法
CN114270531A (zh) 2019-09-03 2022-04-01 株式会社Flosfia 结晶膜、包含结晶膜的半导体装置以及结晶膜的制造方法
JP7290740B2 (ja) 2019-09-30 2023-06-13 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
KR102849602B1 (ko) 2019-09-30 2025-08-21 가부시키가이샤 플로스피아 적층 구조체 및 반도체 장치
JP7453609B2 (ja) * 2019-11-19 2024-03-21 株式会社Flosfia 剥離方法および結晶性酸化物膜の製造方法
JP7510123B2 (ja) * 2020-01-27 2024-07-03 株式会社Flosfia 半導体装置
WO2021153609A1 (ja) 2020-01-27 2021-08-05 株式会社Flosfia 半導体装置および半導体装置の製造方法
US11804519B2 (en) 2020-04-24 2023-10-31 Flosfia Inc. Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure
JP7649944B2 (ja) * 2020-04-24 2025-03-24 株式会社Flosfia 結晶性積層構造体の製造方法
US11694894B2 (en) 2020-04-24 2023-07-04 Flosfia Inc. Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure
KR20240063901A (ko) 2021-09-22 2024-05-10 신에쓰 가가꾸 고교 가부시끼가이샤 성막방법, 성막장치 및 결정성 산화물막
JPWO2023238587A1 (enExample) 2022-06-08 2023-12-14
KR102675554B1 (ko) * 2022-06-29 2024-06-14 웨이브로드 주식회사 그룹3족 질화물 반도체 소자용 템플릿
US12402381B2 (en) 2022-07-12 2025-08-26 Flosfia, Inc. Semiconductor device

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JP2000231122A (ja) * 1999-02-12 2000-08-22 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
EP2016614A4 (en) * 2006-04-25 2014-04-09 Univ Singapore METHOD OF A ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL AGGREGATE GALLIUM NITRIDE ORIGIN
DE102010011895B4 (de) * 2010-03-18 2013-07-25 Freiberger Compound Materials Gmbh Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate
KR101932576B1 (ko) * 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8569754B2 (en) * 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
JP5975466B2 (ja) * 2011-09-08 2016-08-23 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶

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