JP2016100593A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016100593A5 JP2016100593A5 JP2014239390A JP2014239390A JP2016100593A5 JP 2016100593 A5 JP2016100593 A5 JP 2016100593A5 JP 2014239390 A JP2014239390 A JP 2014239390A JP 2014239390 A JP2014239390 A JP 2014239390A JP 2016100593 A5 JP2016100593 A5 JP 2016100593A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystalline
- structure according
- void
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000011800 void material Substances 0.000 claims 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000003595 mist Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 239000010431 corundum Substances 0.000 claims 2
- 238000000407 epitaxy Methods 0.000 claims 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014239390A JP2016100593A (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体 |
| JP2019164176A JP7344426B2 (ja) | 2014-11-26 | 2019-09-10 | 結晶性積層構造体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014239390A JP2016100593A (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019164176A Division JP7344426B2 (ja) | 2014-11-26 | 2019-09-10 | 結晶性積層構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016100593A JP2016100593A (ja) | 2016-05-30 |
| JP2016100593A5 true JP2016100593A5 (enExample) | 2018-01-11 |
Family
ID=56077553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014239390A Pending JP2016100593A (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2016100593A (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017199535A1 (ja) | 2016-05-19 | 2017-11-23 | オリンパス株式会社 | 生体観察システム |
| JP6904517B2 (ja) * | 2016-06-30 | 2021-07-14 | 株式会社Flosfia | 結晶性酸化物半導体膜およびその製造方法 |
| JP7358719B2 (ja) * | 2017-05-09 | 2023-10-11 | 株式会社Flosfia | サーミスタ膜およびその成膜方法 |
| JP2019034883A (ja) * | 2017-08-21 | 2019-03-07 | 株式会社Flosfia | 結晶膜の製造方法 |
| CN109423694B (zh) | 2017-08-21 | 2022-09-09 | 株式会社Flosfia | 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法 |
| WO2019208616A1 (ja) * | 2018-04-27 | 2019-10-31 | 株式会社Flosfia | サーミスタ膜、サーミスタ膜を有するサーミスタ素子、およびサーミスタ膜の成膜方法 |
| US11488821B2 (en) | 2018-06-26 | 2022-11-01 | Flosfia Inc. | Film forming method and crystalline multilayer structure |
| WO2020004250A1 (ja) | 2018-06-26 | 2020-01-02 | 株式会社Flosfia | 結晶性酸化物膜 |
| JP7315137B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
| JP7315136B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
| JP7124207B2 (ja) * | 2019-03-28 | 2022-08-23 | 日本碍子株式会社 | 下地基板 |
| WO2020195497A1 (ja) * | 2019-03-28 | 2020-10-01 | 日本碍子株式会社 | 半導体膜 |
| WO2020261356A1 (ja) * | 2019-06-25 | 2020-12-30 | 日本碍子株式会社 | 半導体膜 |
| WO2021044845A1 (ja) * | 2019-09-03 | 2021-03-11 | 株式会社Flosfia | 結晶膜、結晶膜を含む半導体装置、及び結晶膜の製造方法 |
| WO2021064803A1 (ja) * | 2019-09-30 | 2021-04-08 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| JP7290740B2 (ja) | 2019-09-30 | 2023-06-13 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| TWI850473B (zh) | 2019-09-30 | 2024-08-01 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 積層結構體及半導體裝置 |
| CN115023816A (zh) | 2020-01-27 | 2022-09-06 | 株式会社Flosfia | 半导体装置和半导体装置的制造方法 |
| US11804519B2 (en) | 2020-04-24 | 2023-10-31 | Flosfia Inc. | Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure |
| US11694894B2 (en) | 2020-04-24 | 2023-07-04 | Flosfia Inc. | Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure |
| JP7598113B2 (ja) * | 2020-09-14 | 2024-12-11 | 株式会社Flosfia | 結晶膜の成長方法および結晶性酸化物膜 |
| US20240395548A1 (en) | 2021-09-22 | 2024-11-28 | Shin-Etsu Chemical Co., Ltd. | Film-forming method, film-forming apparatus, and crystalline oxide film |
| WO2023238587A1 (ja) | 2022-06-08 | 2023-12-14 | 信越化学工業株式会社 | 成膜方法、及び成膜装置 |
| US12402381B2 (en) | 2022-07-12 | 2025-08-26 | Flosfia, Inc. | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3471685B2 (ja) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材及びその製造方法 |
| JP5347835B2 (ja) * | 2009-08-25 | 2013-11-20 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
| DE102010011895B4 (de) * | 2010-03-18 | 2013-07-25 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate |
| JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
-
2014
- 2014-11-26 JP JP2014239390A patent/JP2016100593A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016100593A5 (enExample) | ||
| JP2016100592A5 (enExample) | ||
| JP2016098166A5 (enExample) | ||
| EA201890238A1 (ru) | Способ выращивания нанопроволок или нанопирамидок на графитовых подложках | |
| WO2015156871A3 (en) | Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer | |
| JP2019528225A5 (enExample) | ||
| WO2014144698A3 (en) | Large-area, laterally-grown epitaxial semiconductor layers | |
| WO2013049417A3 (en) | Light emitting devices having dislocation density maintaining buffer layers | |
| JP2015079946A5 (enExample) | ||
| JP2016001738A5 (enExample) | ||
| EP2543752A4 (en) | SUBSTRATE WITH INTERNAL REFORM FOR EPITACTIC GROWTH, INTERNAL REFORMING SUBSTRATE AND A MULTILAYER FILM, SEMICONDUCTOR ELEMENT, MASS SUBSTRATE SUBSTRATE, AND METHOD OF MANUFACTURING THEREOF | |
| MY186812A (en) | Iii-n devices in si trenches | |
| EP2770545A3 (en) | Growth substrate, nitride semiconductor device and method of manufacturing the same | |
| JP2014090169A5 (enExample) | ||
| MY190040A (en) | Wafer producing method | |
| JP2016518713A5 (enExample) | ||
| TW201613103A (en) | Self aligned replacement fin formation | |
| GB201210134D0 (en) | Selective sidewall growth of semiconductor material | |
| JP2014208571A5 (enExample) | ||
| GB202100192D0 (en) | Method for producing gan layered substrate | |
| SG11201805382SA (en) | Method of manufacturing a monocrystalline layer, in particular a piezoelectric layer | |
| GB201407297D0 (en) | A method of preparing a substrate for nanowire growth, And a method of fabricating an array of semiconductor nanostructures | |
| WO2012058262A3 (en) | Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers | |
| GB2529953A (en) | Nanostructures and nanofeatures with Si (111) planes on Si (100) wafers for III-N epitaxy | |
| JP2017538288A5 (enExample) |