JP2016100593A5 - - Google Patents
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- JP2016100593A5 JP2016100593A5 JP2014239390A JP2014239390A JP2016100593A5 JP 2016100593 A5 JP2016100593 A5 JP 2016100593A5 JP 2014239390 A JP2014239390 A JP 2014239390A JP 2014239390 A JP2014239390 A JP 2014239390A JP 2016100593 A5 JP2016100593 A5 JP 2016100593A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystalline
- structure according
- void
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000013078 crystal Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000011800 void material Substances 0.000 claims 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000003595 mist Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 239000010431 corundum Substances 0.000 claims 2
- 238000000407 epitaxy Methods 0.000 claims 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014239390A JP2016100593A (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体 |
| JP2019164176A JP7344426B2 (ja) | 2014-11-26 | 2019-09-10 | 結晶性積層構造体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014239390A JP2016100593A (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019164176A Division JP7344426B2 (ja) | 2014-11-26 | 2019-09-10 | 結晶性積層構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016100593A JP2016100593A (ja) | 2016-05-30 |
| JP2016100593A5 true JP2016100593A5 (enExample) | 2018-01-11 |
Family
ID=56077553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014239390A Pending JP2016100593A (ja) | 2014-11-26 | 2014-11-26 | 結晶性積層構造体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2016100593A (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108778088B (zh) | 2016-05-19 | 2021-03-19 | 奥林巴斯株式会社 | 活体观察系统 |
| JP6904517B2 (ja) * | 2016-06-30 | 2021-07-14 | 株式会社Flosfia | 結晶性酸化物半導体膜およびその製造方法 |
| US10989609B2 (en) * | 2017-05-09 | 2021-04-27 | Flosfia Inc. | Thermistor film and method of depositing the same |
| CN109423690B (zh) * | 2017-08-21 | 2022-09-16 | 株式会社Flosfia | 用于制造结晶膜的方法 |
| CN109423694B (zh) | 2017-08-21 | 2022-09-09 | 株式会社Flosfia | 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法 |
| WO2019208616A1 (ja) * | 2018-04-27 | 2019-10-31 | 株式会社Flosfia | サーミスタ膜、サーミスタ膜を有するサーミスタ素子、およびサーミスタ膜の成膜方法 |
| JP7741487B2 (ja) * | 2018-06-26 | 2025-09-18 | 株式会社Flosfia | 結晶性酸化物膜 |
| CN112368429A (zh) * | 2018-06-26 | 2021-02-12 | 株式会社Flosfia | 成膜方法及结晶性层叠结构体 |
| JP7315136B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
| JP7315137B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
| JP7124207B2 (ja) | 2019-03-28 | 2022-08-23 | 日本碍子株式会社 | 下地基板 |
| WO2020195497A1 (ja) * | 2019-03-28 | 2020-10-01 | 日本碍子株式会社 | 半導体膜 |
| WO2020261356A1 (ja) * | 2019-06-25 | 2020-12-30 | 日本碍子株式会社 | 半導体膜 |
| CN114270531A (zh) * | 2019-09-03 | 2022-04-01 | 株式会社Flosfia | 结晶膜、包含结晶膜的半导体装置以及结晶膜的制造方法 |
| JP7290740B2 (ja) | 2019-09-30 | 2023-06-13 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| JP7221410B2 (ja) * | 2019-09-30 | 2023-02-13 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| KR102849602B1 (ko) | 2019-09-30 | 2025-08-21 | 가부시키가이샤 플로스피아 | 적층 구조체 및 반도체 장치 |
| WO2021153609A1 (ja) | 2020-01-27 | 2021-08-05 | 株式会社Flosfia | 半導体装置および半導体装置の製造方法 |
| US11804519B2 (en) | 2020-04-24 | 2023-10-31 | Flosfia Inc. | Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure |
| US11694894B2 (en) | 2020-04-24 | 2023-07-04 | Flosfia Inc. | Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure |
| JP7598113B2 (ja) * | 2020-09-14 | 2024-12-11 | 株式会社Flosfia | 結晶膜の成長方法および結晶性酸化物膜 |
| KR20240063901A (ko) | 2021-09-22 | 2024-05-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 성막방법, 성막장치 및 결정성 산화물막 |
| JPWO2023238587A1 (enExample) | 2022-06-08 | 2023-12-14 | ||
| US12402381B2 (en) | 2022-07-12 | 2025-08-26 | Flosfia, Inc. | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3471685B2 (ja) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材及びその製造方法 |
| JP5347835B2 (ja) * | 2009-08-25 | 2013-11-20 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
| DE102010011895B4 (de) * | 2010-03-18 | 2013-07-25 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate |
| JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
-
2014
- 2014-11-26 JP JP2014239390A patent/JP2016100593A/ja active Pending
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