JP2014208571A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014208571A5 JP2014208571A5 JP2014031212A JP2014031212A JP2014208571A5 JP 2014208571 A5 JP2014208571 A5 JP 2014208571A5 JP 2014031212 A JP2014031212 A JP 2014031212A JP 2014031212 A JP2014031212 A JP 2014031212A JP 2014208571 A5 JP2014208571 A5 JP 2014208571A5
- Authority
- JP
- Japan
- Prior art keywords
- gallium nitride
- crystal
- nitride crystal
- manufacturing
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 22
- 229910002601 GaN Inorganic materials 0.000 claims 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 230000009036 growth inhibition Effects 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical group 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014031212A JP6337502B2 (ja) | 2013-02-22 | 2014-02-21 | 周期表第１３族金属窒化物結晶およびその製造方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013033534 | 2013-02-22 | ||
| JP2013033534 | 2013-02-22 | ||
| JP2013033533 | 2013-02-22 | ||
| JP2013033533 | 2013-02-22 | ||
| JP2013064732 | 2013-03-26 | ||
| JP2013064732 | 2013-03-26 | ||
| JP2014031212A JP6337502B2 (ja) | 2013-02-22 | 2014-02-21 | 周期表第１３族金属窒化物結晶およびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018088328A Division JP6593487B2 (ja) | 2013-02-22 | 2018-05-01 | 周期表第１３族金属窒化物結晶およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014208571A JP2014208571A (ja) | 2014-11-06 |
| JP2014208571A5 true JP2014208571A5 (enExample) | 2017-01-19 |
| JP6337502B2 JP6337502B2 (ja) | 2018-06-06 |
Family
ID=51391326
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014031212A Active JP6337502B2 (ja) | 2013-02-22 | 2014-02-21 | 周期表第１３族金属窒化物結晶およびその製造方法 |
| JP2018088328A Active JP6593487B2 (ja) | 2013-02-22 | 2018-05-01 | 周期表第１３族金属窒化物結晶およびその製造方法 |
| JP2019169413A Active JP6915662B2 (ja) | 2013-02-22 | 2019-09-18 | 窒化ガリウム結晶および窒化ガリウム基板 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018088328A Active JP6593487B2 (ja) | 2013-02-22 | 2018-05-01 | 周期表第１３族金属窒化物結晶およびその製造方法 |
| JP2019169413A Active JP6915662B2 (ja) | 2013-02-22 | 2019-09-18 | 窒化ガリウム結晶および窒化ガリウム基板 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US9890474B2 (enExample) |
| JP (3) | JP6337502B2 (enExample) |
| WO (1) | WO2014129544A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL229568B1 (pl) * | 2013-05-30 | 2018-07-31 | Ammono Spolka Akcyjna | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
| JP6260125B2 (ja) * | 2013-07-08 | 2018-01-17 | 富士通株式会社 | 分析装置、分析方法、成膜装置及び成膜方法 |
| WO2016125890A1 (ja) | 2015-02-06 | 2016-08-11 | 三菱化学株式会社 | ＧａＮ単結晶およびＧａＮ単結晶製造方法 |
| JP6760285B2 (ja) | 2015-07-14 | 2020-09-23 | 三菱ケミカル株式会社 | 非極性または半極性ＧａＮウエハ |
| JP2017088430A (ja) * | 2015-11-05 | 2017-05-25 | 三菱化学株式会社 | ＧａＮウエハ |
| KR102426231B1 (ko) | 2016-08-08 | 2022-07-29 | 미쯔비시 케미컬 주식회사 | 도전성 C면 GaN 기판 |
| JP6759831B2 (ja) * | 2016-08-08 | 2020-09-23 | 三菱ケミカル株式会社 | Ｃ面ＧａＮ基板 |
| WO2018030312A1 (ja) * | 2016-08-08 | 2018-02-15 | 三菱ケミカル株式会社 | ＧａＮ結晶成長方法およびＣ面ＧａＮ基板 |
| WO2022181755A1 (ja) * | 2021-02-25 | 2022-09-01 | 三菱ケミカル株式会社 | 窒化ガリウム結晶、窒化ガリウム基板及び窒化ガリウム基板の製造方法 |
| CN116981794B (zh) * | 2021-03-30 | 2025-11-04 | 日本碍子株式会社 | 溅射靶 |
| EP4394094A4 (en) * | 2021-08-25 | 2025-08-20 | Mitsubishi Chem Corp | GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL |
| JP2024545415A (ja) * | 2021-12-01 | 2024-12-06 | エスエルティー テクノロジーズ インコーポレイテッド | 酸素勾配を有する第ｉｉｉ族窒化物基板、その製造方法、並びにその使用方法 |
| EP4502252A4 (en) | 2022-03-31 | 2025-09-03 | Mitsubishi Chem Corp | GAN CRYSTAL AND GAN SLICE |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3876518B2 (ja) | 1998-03-05 | 2007-01-31 | 日亜化学工業株式会社 | 窒化物半導体基板の製造方法および窒化物半導体基板 |
| JP3788104B2 (ja) * | 1998-05-28 | 2006-06-21 | 住友電気工業株式会社 | 窒化ガリウム単結晶基板及びその製造方法 |
| TW428331B (en) | 1998-05-28 | 2001-04-01 | Sumitomo Electric Industries | Gallium nitride single crystal substrate and method of producing the same |
| JP4016062B2 (ja) * | 1998-07-31 | 2007-12-05 | シャープ株式会社 | 窒化物半導体構造とその製造方法および発光素子 |
| CA2464083C (en) * | 2001-10-26 | 2011-08-02 | Ammono Sp. Z O.O. | Substrate for epitaxy |
| JP4229624B2 (ja) | 2002-03-19 | 2009-02-25 | 三菱化学株式会社 | 窒化物単結晶の製造方法 |
| AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
| US7638815B2 (en) | 2002-12-27 | 2009-12-29 | Momentive Performance Materials Inc. | Crystalline composition, wafer, and semi-conductor structure |
| JP5356933B2 (ja) | 2004-03-10 | 2013-12-04 | 三菱化学株式会社 | 窒化物結晶の製造装置 |
| WO2005121415A1 (en) | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | Bulk mono-crystalline gallium-containing nitride and its application |
| EP1759408A1 (en) | 2004-06-11 | 2007-03-07 | AMMONO Sp.z o.o. | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. |
| PL371405A1 (pl) | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
| JP5260831B2 (ja) * | 2006-01-05 | 2013-08-14 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板の製造方法および半導体装置の製造方法 |
| WO2008143166A1 (ja) | 2007-05-17 | 2008-11-27 | Mitsubishi Chemical Corporation | Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス |
| KR20100108351A (ko) * | 2007-11-27 | 2010-10-06 | 가꼬호징 조찌가꾸잉 | Ｉｉｉ족 질화물 구조체 및 ｉｉｉ족 질화물 구조체의 제조방법 |
| US20120000415A1 (en) * | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
| US9404197B2 (en) * | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| JP5104830B2 (ja) | 2008-09-08 | 2012-12-19 | 住友電気工業株式会社 | 基板 |
| US9589792B2 (en) * | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
| US8253162B2 (en) | 2010-04-27 | 2012-08-28 | Sumitomo Electric Industries, Ltd. | GaN substrate and light-emitting device |
| JP5821164B2 (ja) | 2010-04-27 | 2015-11-24 | 住友電気工業株式会社 | ＧａＮ基板および発光デバイス |
| JP2011230966A (ja) | 2010-04-28 | 2011-11-17 | Mitsubishi Chemicals Corp | 第１３族金属窒化物結晶の製造方法 |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| JP6020440B2 (ja) | 2011-03-22 | 2016-11-02 | 三菱化学株式会社 | 窒化物結晶の製造方法 |
| JP5437533B2 (ja) * | 2011-04-12 | 2014-03-12 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
| JP2013035711A (ja) * | 2011-08-05 | 2013-02-21 | Mitsubishi Chemicals Corp | 六角棒状ＧａＮ系半導体結晶およびその製造方法 |
| JP5870887B2 (ja) | 2011-09-30 | 2016-03-01 | 三菱化学株式会社 | 窒化物単結晶のアニール処理方法 |
| JP6137197B2 (ja) | 2012-12-17 | 2017-05-31 | 三菱化学株式会社 | 窒化ガリウム基板、および、窒化物半導体結晶の製造方法 |
-
2014
- 2014-02-20 WO PCT/JP2014/054037 patent/WO2014129544A1/ja not_active Ceased
- 2014-02-21 JP JP2014031212A patent/JP6337502B2/ja active Active
-
2015
- 2015-08-21 US US14/832,348 patent/US9890474B2/en active Active
-
2017
- 2017-12-14 US US15/841,985 patent/US10309038B2/en active Active
-
2018
- 2018-05-01 JP JP2018088328A patent/JP6593487B2/ja active Active
-
2019
- 2019-03-08 US US16/296,899 patent/US10995421B2/en active Active
- 2019-09-18 JP JP2019169413A patent/JP6915662B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014208571A5 (enExample) | ||
| JP2016100593A5 (enExample) | ||
| EA201890238A1 (ru) | Способ выращивания нанопроволок или нанопирамидок на графитовых подложках | |
| JP2011073958A5 (enExample) | ||
| JP2016100592A5 (enExample) | ||
| JP2012142629A5 (enExample) | ||
| JP2011063504A5 (enExample) | ||
| JP2014090169A5 (enExample) | ||
| JP2013212952A5 (enExample) | ||
| JP2014236093A5 (enExample) | ||
| WO2014144698A3 (en) | Large-area, laterally-grown epitaxial semiconductor layers | |
| JP6405889B2 (ja) | ＧａＮ基板の製造方法 | |
| GB2529347A (en) | Making a defect free fin based device in lateral epitaxy overgrowth region | |
| JP2015214448A5 (enExample) | ||
| JP2007055850A (ja) | ＺｎＯ系化合物半導体結晶の製造方法、及び、ＺｎＯ系化合物半導体基板 | |
| CN104157750A (zh) | 发光二极管外延生长方法 | |
| Li et al. | Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD | |
| WO2013114218A3 (en) | High-throughput continuous gas-phase synthesis of nanowires with tunable properties | |
| JP2015061060A5 (enExample) | ||
| JP2013055319A5 (enExample) | ||
| TWI534861B (zh) | A template for epitaxial growth and a method for producing the same, and a nitride semiconductor device | |
| JP2013173655A (ja) | 半導体結晶材料およびこれを用いた半導体素子 | |
| WO2013070369A3 (en) | Patterned layer design for group iii nitride layer growth | |
| JP2010245444A5 (enExample) | ||
| JP2015059078A5 (enExample) |