JP2013055319A5 - - Google Patents

Download PDF

Info

Publication number
JP2013055319A5
JP2013055319A5 JP2012057736A JP2012057736A JP2013055319A5 JP 2013055319 A5 JP2013055319 A5 JP 2013055319A5 JP 2012057736 A JP2012057736 A JP 2012057736A JP 2012057736 A JP2012057736 A JP 2012057736A JP 2013055319 A5 JP2013055319 A5 JP 2013055319A5
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
buffer layer
plane
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012057736A
Other languages
English (en)
Japanese (ja)
Other versions
JP6005372B2 (ja
JP2013055319A (ja
Filing date
Publication date
Priority claimed from KR1020110087852A external-priority patent/KR101883840B1/ko
Application filed filed Critical
Publication of JP2013055319A publication Critical patent/JP2013055319A/ja
Publication of JP2013055319A5 publication Critical patent/JP2013055319A5/ja
Application granted granted Critical
Publication of JP6005372B2 publication Critical patent/JP6005372B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012057736A 2011-08-31 2012-03-14 発光素子 Expired - Fee Related JP6005372B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0087852 2011-08-31
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Publications (3)

Publication Number Publication Date
JP2013055319A JP2013055319A (ja) 2013-03-21
JP2013055319A5 true JP2013055319A5 (enExample) 2015-04-09
JP6005372B2 JP6005372B2 (ja) 2016-10-12

Family

ID=45528963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012057736A Expired - Fee Related JP6005372B2 (ja) 2011-08-31 2012-03-14 発光素子

Country Status (6)

Country Link
US (1) US8729576B2 (enExample)
EP (1) EP2565940B1 (enExample)
JP (1) JP6005372B2 (enExample)
KR (1) KR101883840B1 (enExample)
CN (1) CN102969420A (enExample)
TW (1) TWI539623B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013192001A1 (en) * 2012-06-18 2013-12-27 The Government Of The U.S.A., As Represented By The Secretary Of The Navy Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures
US10804426B2 (en) * 2014-10-31 2020-10-13 ehux, Inc. Planar surface mount micro-LED for fluidic assembly
JP6646934B2 (ja) * 2015-02-10 2020-02-14 アルパッド株式会社 半導体発光装置及び半導体発光装置の製造方法
CN107851605B (zh) * 2015-07-06 2021-11-26 香港科技大学 半导体器件及其制作方法
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device
CN111477726A (zh) * 2019-05-08 2020-07-31 伊乐视有限公司 用于流体组装的平面表面贴装微型led及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3779766B2 (ja) * 1996-02-29 2006-05-31 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体装置
JP2001294500A (ja) * 2000-02-07 2001-10-23 Japan Energy Corp 窒化ガリウム系化合物半導体結晶の成長方法
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
JP4277617B2 (ja) * 2003-08-08 2009-06-10 日立電線株式会社 半導体発光素子の製造方法
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007103774A (ja) * 2005-10-06 2007-04-19 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
EP1788619A3 (en) * 2005-11-18 2009-09-09 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007165613A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP4888857B2 (ja) * 2006-03-20 2012-02-29 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体薄膜およびｉｉｉ族窒化物半導体発光素子
JP2008042076A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子及びその製造方法
JP4605193B2 (ja) * 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4944738B2 (ja) * 2007-11-13 2012-06-06 古河機械金属株式会社 ＧａＮ半導体基板の製造方法
KR101405693B1 (ko) * 2007-11-26 2014-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
WO2010020077A1 (en) * 2008-08-22 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingaain light-emitting device on a combined substrate
JP2010238954A (ja) * 2009-03-31 2010-10-21 Nec Corp 半導体発光素子、光ピックアップ装置、光源装置および半導体発光素子の製造方法
JP5434573B2 (ja) * 2009-12-24 2014-03-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子

Similar Documents

Publication Publication Date Title
JP2013055319A5 (enExample)
US9246048B2 (en) Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same
CN106057989B (zh) 一种GaN基发光二极管的外延片的制作方法
CN104393130B (zh) 一种GaN基LED外延结构及其制备方法
JP2010539731A5 (enExample)
JP2014170934A5 (enExample)
TWI727247B (zh) 偏振選擇的奈米發光二極體
JP2009123718A5 (enExample)
JP2015065233A5 (enExample)
CN105789394A (zh) 一种GaN基LED外延结构及其制备方法
CN104241468A (zh) 一种高外量子效率GaN基LED外延片及其制作方法
CN103500780A (zh) 一种氮化镓基led外延结构及其制备方法
CN103400913B (zh) 一种用于生长六方相GaN的矩形图形化硅衬底
CN106129207A (zh) 一种氮化镓基发光二极管的外延片及制备方法
TW201222872A (en) Limiting strain relaxation in III-nitride heterostructures by substrate and epitaxial layer patterning
JP6313809B2 (ja) 半導体装置
CN104916745A (zh) GaN基LED外延结构及其制备方法
KR102510589B1 (ko) 반도체 장치 및 이의 제조 방법
WO2016051935A1 (ja) 半導体素子用のエピタキシャル基板およびその製造方法
JP2015061060A5 (enExample)
CN103996766B (zh) 氮化镓基发光二极管及其制备方法
CN106030829A (zh) 一种ⅲ-ⅴ族氮化物半导体外延片、包含该外延片的器件及其制备方法
CN104465930A (zh) 氮化物发光二极管
CN104779331A (zh) 一种具有二维电子气结构的GaN基LED器件及其制备方法
CN105355649B (zh) 一种发光二极管外延片及其制作方法