JP2010539731A5 - - Google Patents

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Publication number
JP2010539731A5
JP2010539731A5 JP2010526007A JP2010526007A JP2010539731A5 JP 2010539731 A5 JP2010539731 A5 JP 2010539731A5 JP 2010526007 A JP2010526007 A JP 2010526007A JP 2010526007 A JP2010526007 A JP 2010526007A JP 2010539731 A5 JP2010539731 A5 JP 2010539731A5
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JP
Japan
Prior art keywords
layer
nitride
emitting diode
type
diode according
Prior art date
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Pending
Application number
JP2010526007A
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English (en)
Japanese (ja)
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JP2010539731A (ja
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Priority claimed from PCT/US2008/077064 external-priority patent/WO2009039402A1/en
Publication of JP2010539731A publication Critical patent/JP2010539731A/ja
Publication of JP2010539731A5 publication Critical patent/JP2010539731A5/ja
Pending legal-status Critical Current

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JP2010526007A 2007-09-19 2008-09-19 パターン化した基板上の（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ装置 Pending JP2010539731A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97367107P 2007-09-19 2007-09-19
PCT/US2008/077064 WO2009039402A1 (en) 2007-09-19 2008-09-19 (al,in,ga,b)n device structures on a patterned substrate

Publications (2)

Publication Number Publication Date
JP2010539731A JP2010539731A (ja) 2010-12-16
JP2010539731A5 true JP2010539731A5 (enExample) 2012-11-01

Family

ID=40453500

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Application Number Title Priority Date Filing Date
JP2010526007A Pending JP2010539731A (ja) 2007-09-19 2008-09-19 パターン化した基板上の（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ装置

Country Status (4)

Country Link
US (2) US8183557B2 (enExample)
JP (1) JP2010539731A (enExample)
KR (1) KR20100064383A (enExample)
WO (1) WO2009039402A1 (enExample)

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