CN102810609B - 一种紫外半导体发光器件及其制造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000002310 reflectometry Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 139
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000002344 surface layer Substances 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010412 perfusion Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种紫外半导体发光器件及其制造方法，其结构包括：发光外延层，由n型半导体层、发光层、p型半导体层构成，其一侧为出光面，另一侧为非出光面；隧道结，位于所述发光外延层的非出光面一侧，部分区域开孔露出发光外延层；光学相位匹配层，位于所述露出的发光外延层的表面层上，可透紫外线；反射层，覆盖整个隧道结和光学相位匹配层上。在发光外延层表面制备多层隧道结，并制作图形化结构，降低欧姆接触电阻的同时，减少外延表层对紫外线的吸收，从而提升亮度及降低电阻，以求达到高性能紫外线发光器件的广泛应用。
Description
技术领域
本发明涉及一种半导体发光器件其制造方法，更具体地为一种深紫外半导体发光器件及其制造方法，其发光波长为不大于380 nm。
背景技术
通常，紫外线发光二极管具有多层不同材料结构。材料与厚度的选择影响到LED的发光波长。为提升取光效率，这些多层结构都是选择不同的化学成分组成，以促进光电载流子独立进入复合区（一般是量子阱）。在量子阱一侧掺以施主原子从而提高电子的浓度（N型层），另外一侧掺以受主原子从而提高空穴的浓度（P型层）。
紫外线发光二极管也包括电子接触结构，根据不同器件的性质可选择不同电极结构连接电源。电源可通过接触结构为器件提供电流。接触结构将电流沿着器件表面注入发光区里面并转换成光。在紫外线发光二极管表面可用导电材料做成接触结构。良好的欧姆接触可以降低接触电阻，但是这些结构会阻止光的发射从而降低光通量。如图1所示，为一种现有紫外芯片结构，其表面外延覆盖层的p-GaN层的能带隙为3.4 eV（364 nm），所以会吸收从发光体产生低于364 nm的紫外线。
如图2所示，为一种采用倒装出光方式的发光器件结构，其可解决p-GaN层的吸光问题。在倒装芯片结构中，反射层的反射效率对发光效率起着重要作用。金属反射层的功函数高低与发光外延层的肖特基势垒高度差异，决定着反射层与导电体界面的欧姆接触性能。为了形成低电阻的欧姆接触，P型半导体上的欧姆接触层需要利用功函数高及高紫外线反射的金属。在紫外区域反射率好的金属，一般属于低功函数金属（以铝为例，在紫外区域具有良好的反射率，其功函数为4.28eV，属于低功函数的金属），所以目前的P型欧姆接触金属必需要用铬、镍或钛等高功函数金属作为媒介层，从而改善p型层的欧姆接触，但是铬、钛和镍等在波长380nm以下紫外线的反射率非常差。
发明内容
针对上述问题，本发明提出了一种紫外半导体发光器件及其制造方法，其针对提升波长380nm以下的紫外线发光器件光通量，在发光外延层表面制备多层隧道结，并制作图形化结构，降低欧姆接触电阻的同时，减少外延表层对紫外线的吸收，从而提升亮度及降低电阻，以求达到高性能紫外线发光器件的广泛应用。
根据本发明的第一个方面，一种发光波长为100～380 nm的紫外半导体发光器件，包括：发光外延结构，由n型半导体层、发光层、p型半导体层构成，其一侧为出光面，另一侧为非出光面；隧道结，位于所述发光外延结构的非出光面一侧，部分区域开孔露出发光外延结构；光学相位匹配层，位于所述露出的发光外延结构的表面层上，可透紫外线；反射层，覆盖整个隧道结和光学相位匹配层上。
根据本发明的第二个方面，一种发光波长为100～380 nm的紫外半导体发光器件的制作方法，包含如下步骤：
1）在一生长衬底上制作n型导电层、发光层、p型导电层，构成发光外延结构，其一侧为出光面，另一侧为非出光面；
2）在发光外延结构的非出光面一侧表面上制作隧道结；
3）蚀刻部分区域的隧道结及发光外延结构，露出部分发光外延结构表面；
4）在露出的发光外延结构表面上制作光学相位匹配层；
5）在隧道结和光学相位匹配层上制作反射层。
在本发明的一些优先实施例中，所述反射层的材料为低功函数材料，其与隧道结形成欧姆接触。进一步地，所述反射层的功函数值范围为4.0-5.0 eV，对于低于波长380 nm的光波的反射率不少于70%。
本发明利用隧道效应原理，在发光外延层上制作隧道结，将隧道结的上层转为高掺杂浓度的导电层，并在所述的隧道结制作适合全角度反射光的图形结构。部分隧道结与低功函数反射金属形成欧姆接触，采用图形化分布设计从而充分降低欧姆接触电阻，同时将部分隧道结蚀刻掉至出光导电层区域，减少紫外线的吸收，并在曝露的出光导电表面层制作光学相位匹配层，采用高效透紫外线的材料作为光学相位匹配层，进一步提高紫外线反射效率。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
图1为一种传统正装结构的紫外半导体发光器件的结构剖示图。
图2为一种现有倒装结构的紫外半导体发光器件的结构剖示图。
图3示意了各种金属在紫外波段内的光反射率。
图4～图12为本发明第一实施例之一种覆晶式紫外半导体发光器件的制备方法的各个步骤的结构剖示图。
图13为本发明第二实施例之一种垂直式紫外半导体发光器件的结构剖示图。
图中各标号表示：
100：衬底；111：n型半导体接触层；112：发光层；113：p型半导体接触层；114：p型覆盖层；131：p电极；132：n电极；120：支撑基板；121，122：金属层；200，300，400，500：生长衬底；210，310：发光外延层；211，311：n型半导体接触层；212，312：发光层；213，313：p型半导体接触层；220，320：隧道结；221：p++ AlxGa1-xN层；222：p++ AlxGa1-xN层；230：开口结构；240，340：光学相位匹配层；250，350：反射层；261，361：p电极；262，362：n电极；270，370：支撑基板；271，272，371：金属层。
具体实施方式
下面将结合示意图对本发明的LED器件结构及其制备方法进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
以下各实施例公开了一种紫外半导体发光器件及其制作方法。该发光器件包括：由n型半导体层、发光层、p型半导体层构成的发光外延结构，以n型半导体层一侧为出光面、p型半导体层一侧为非出光面；位于p型半导体层上的隧道结，其由高p掺杂掺导电层和n掺杂掺导电层构成，部分区域开孔露出发光外延结构；光学相位匹配层，位于所露出的发光外延结构的表面层上，可透紫外线；反射层，覆盖整个隧道结和光学相位匹配层上。
通过在发光外延层与反射层之间插入隧道结结构，确保了反射层对于紫外光的高反射率的同时，降低了欧姆接触电阻。而在隧道结的部分区域开孔露出发光外延结构，并制作光学相位匹配层，一方面减少了外延表层对紫外线的吸收，从而提升亮度及降低电阻。
发光外延层为III- V族材料，可为由Al，Ga，N，P，In组成的二元或三元化合物，例如AlN、GaN、AlGaN等。在一些优选实施例中，选用AlGaN为发光外延层的材料，其中Al成分不低于40%。AlGaN组合的能带隙由Al的摩尔分数控制，Al摩尔分数越高，能带隙越大，从而产出的紫外线发光波长越短。在多层AlGaN发光外延层内提升Al的摩尔分数可以发出较短的紫外波，同时提高发光层的导电性，其有利于提升紫外半导体发光器件性能。
隧道结位于发光外延层上面，由高p掺杂掺导电层和n掺杂掺导电层构成，掺杂浓度为1019～1020cm-3。在隧道结部分区域开孔露出发光外延层的表层，形成图形化结构，较优地，侧面具有立体坡度，坡度在10°～ 85°之间。隧道结可以为带状或岛屿状，对于带状结构，其顶部的横截面可以为梯形、三角形、弧形等，对于岛屿状结构，具体可为圆台、梯形台、锥形或半球状等。
光学相位匹配层位于隧道结开口区域的发光外延层的表层上，光学厚度为1/4发光波长的奇倍数，选为透紫外线良好的绝缘材料，首选金刚石薄膜、AlN薄膜或者SiO2薄膜。为了保证反射层与外延层的欧姆接触，光学相匹配层的面积不宜过大，一般控制在发光层面积的50%以内。
反射层覆盖整个隧道结和光学相位匹配层。为了保证反射层对紫外线的反射率，材料选用低功函数材料。在一些优选实施例中，反射层的功函数值范围为4.0-5.0 eV，对于低于波长380 nm的光波的反射率不少于70%，如Al、Ag或其组合。
上面发光器件的制造方法，主要包括下面步骤：
1）在生长衬底上外延生长n型导电层、发光层、p型导电层，构成发光外延层，其一侧为出光面，另一侧为非出光面；
2）在发光外延层的非出光面一侧表面上外延生长高p掺杂掺导电层和n掺杂掺导电层，构成隧道结；
3）蚀刻部分区域的隧道结及发光外延层，露出部分发光外延层表面；
4）在露出的发光外延层表面上制作光学相位匹配层；
5）在隧道结和光学相位匹配层上制作反射层。
其中，生长衬底为可为单晶或多晶材料，在本发明的一些实施例中，生长衬底选用透紫外线良好的透明材料，其能带隙不少于3.4eV，如选用AlN或者蓝宝石。在步骤1）、2）中，采用MOCVD在生长衬底上沉积外延层。外延层的结构并不仅限于n型导电层、发光层、p型导电层、隧道结，还可以包括缓冲层、n型电流扩展层等。在步骤3）中，先定义隧道结的图形，利用黄光光刻和干蚀刻方法，在隧道结上制作立体图形，形成一系列的开口结构，其蚀刻深度少于0.5 nm。在步骤4）中，可根据麦克斯韦方程模拟出光学相位匹配层的厚度，在开口结构中的发光外延层的表面上沉积透紫外线良好的绝缘材料层，形成光学相位匹配层。
在一些实施例中，分别在p型导电层和n 型导电层上制作p、n电极；提供支撑基板，其上分布有图案化金属材料层，将其与所述p、n电极粘结；减薄所述生长衬底，构成覆晶式发光器件。在另一些实施例中，在反射层上形成电极键合层；提供支撑基板，采用共晶键合技术将其与电极键合层粘结；移除生长衬底，露出发光外延层，在其上制作电极，构成垂直式发光器件。
下面结合具体实施例和附图对本发明做更详细的说明。
实施例1
图4～图12为一种覆晶式紫外半导体发光器件的制作过程的各个步骤的结构示意图，其具体包含下面步骤。
如图4所示，选用一蓝宝石生衬底100，在其上外延生长n型AlxGa1-xN层211，AlxGa1-xN/n-AlxGa1-xN多量子阱发光层212，p型AlxGa1-xN层213，构成发光外延层210。其中,x≥0.4。在p型AlxGa1-xN层213上沉积多层p++ AlxGa1-xN/n++ AlxGa1-xN,构成隧道结220。
如图5所示，利用黄光光刻和干蚀刻方法，蚀刻部分区域的隧道结220和p型AlxGa1-xN层213，露出p型AlxGa1-xN层213的表层，形成一系列的开口结构230，从而图形化隧道结220，获得立体图形结构。其中开口的形状可为中孔状、也可为带状。定义发光台面及n电极区，蚀刻n电极区的隧道结220、p型AlxGa1-xN层213和多量子阱发光层212，露出n型AlxGa1-xN层211表面。
如图6所示，在开口结构230中露出的露出p型AlxGa1-xN层213表层上沉积一层SiO2作为光学相位匹配层240，厚度为1/4发光波长的奇倍数，面积为发光层面积的20～50%。对于隧道结220的形状，如图6～图10所示，可为带状、岛状、圆台、梯形台、锥形或半球状等。
如图11所示，在隧道结220和光学相位匹配层240上制作Al反射层250。
如图12所示，在Al反射层250上制作p电极261，在n电极区的AlxGa1-xN层211表面上制作n电极262。
如图13所示，提供散热型的支撑基板270，在其表面上形成图案化的金属层271、272，将发光结构成支撑基板270粘结，其中，p电极261与金属层271对应，n电极262与金属层272对应，减薄蓝宝石衬底200，形成覆晶式的发光器件。在本实施例中，Al反射层相对于紫外光具有良好的反射率；图形化的隧道结220在保证了Al与外延层的导电性能的同时，减少了外延层对紫外光的吸收；SiO2光学相位匹配层240一方面用于校正发光层发出的光折射径路，另一方面可增加电流注入密度，改善发光效率。。
实施例2
图13为一种垂直式紫外半导体发光器件的结构示意图，其至下而上包括：p电极361，支撑基板370，金属键合层371，反射层350，图形化隧道结320，光学相位匹配层340，p型AlxGa1-xN层313，AlxGa1-xN/n-AlxGa1-xN多量子阱发光层312，n型AlxGa1-xN层311，n电极362。
在本实施例中，首先在蓝宝石衬底上进行外延生长发光外延层310和隧道结320，接着在隧道结320上制作立体图形，然后制作光学相位匹配层340，然后在隧道结320和光学相位匹配层340上制作反射层350，采用共晶键合技术将前述发光外延层310反转倒置在导电型的支撑基板370上，采用化学蚀刻、研磨或激光剥离的方式移除蓝宝石衬底，在露出的n型AlxGa1-xN层311上制作n电极362。
作为本实施例的一种变型，可不用移除蓝宝石衬底，直接做减薄处理，并制作通孔并在其内灌注导电材料形成导电道通，并在背面制作n电极，从而可形成一个光学支撑结构，其一方面可作为光萃取结构，另一方面，可保证外延结构的完整性。
作为本实施例的另一种变型，可采用透光性的导电基板作为生长衬底，便可不用移除生长衬底，直接在生长衬底的背面制作n电极。
Claims (14)
1.一种发光波长为100～380 nm的紫外半导体发光器件，包括：
发光外延层，由n型半导体层、发光层、p型半导体层构成，其一侧为出光面，另一侧为非出光面；
隧道结，位于所述发光外延层的非出光面一侧，为图形化结构，部分区域开孔露出发光外延层；
光学相位匹配层，位于所述露出的发光外延层的表面层上，可透紫外线；
反射层，覆盖整个隧道结和光学相位匹配层上。
2.根据权利要求1所述的半导体发光器件，其特征在于：所述反射层采用功函数为4.0 ～ 5.0 eV的材料，其与隧道结形成欧姆接触。
3.根据权利要求2所述的半导体发光器件，其特征在于：所述反射层的功函数值范围为4.0 ～ 5.0 eV，对于波长低于380 nm的光波的反射率不少于70%。
4.根据权利要求1所述的半导体发光器件，其特征在于：所述隧道结为图形化结构，侧面具有立体坡度，坡度在10°～ 85°之间。
5.根据权利要求4所述的半导体发光器件，其特征在于：所述图形化结构包括带状、岛状、圆台、梯形台、锥形或半球状。
6.根据权利要求1的所述的半导体发光器件，其特征在于：所述发光外延层为III- V族材料，由Al，Ga，N，P，In组成的二元或三元化合物。
7.根据权利要求6的所述的半导体发光器件，其特征在于：所述发光外延层的材料为AlGaN，其中Al成分不低于40%。
8.根据权利要求1的所述的半导体发光器件，其特征在于：所述光学相位匹配层的材料为绝缘性材料。
9.一种发光波长为100～380 nm的紫外半导体发光器件的制作方法，包含如下步骤：
1）在一生长衬底上制作n型导电层、发光层、p型导电层，构成发光外延层，其一侧为出光面，另一侧为非出光面；
2）在发光外延层的非出光面一侧表面上制作隧道结；
3）图形化所述隧道结：蚀刻部分区域的隧道结及发光外延层，露出部分发光外延层表面；
4）在露出的发光外延层表面上制作光学相位匹配层；
5）在隧道结和光学相位匹配层上制作反射层。
10.根据权利要求9所述的半导体发光器件的制作方法，其特征在于：所述生长衬底为透紫外线良好的透明材料，其能带隙不少于3.4eV。
11.根据权利要求9所述的半导体发光器件的制作方法，其特征在于：所述步骤3）中，利用黄光光刻和干蚀刻方法，在隧道结上制作立体图形，其蚀刻深度少于0.5 nm。
12.根据权利要求9所述的半导体发光器件的制作方法，其特征在于：所述反射层采用功函数为4.0 ～ 5.0 eV的材料，其与隧道结形成欧姆接触。
13.根据权利要求9所述的半导体发光器件的制作方法，还包括步骤：
分别在p型导电层和n 型导电层上制作p、n电极；
提供一支撑基板，其上分布有图案化金属材料层，将其与所述p、n电极粘结；
减薄所述生长衬底，构成覆晶式发光器件。
14.根据权利要求9所述的半导体发光器件的制作方法，还包括步骤：
在反射层上形成一电极键合层；
提供一支撑基板，将其与所述电极键合层粘结；
移除生长衬底，露出发光外延层，在其上制作电极，构成垂直式发光器件。
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| CN102054914A (zh) * | 2010-11-09 | 2011-05-11 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法、发光装置 |
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| JP特开2008-78297A 2008.04.03 * |
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| Publication number | Publication date |
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| US9190557B2 (en) | 2015-11-17 |
| US20150144875A1 (en) | 2015-05-28 |
| WO2014026529A1 (zh) | 2014-02-20 |
| CN102810609A (zh) | 2012-12-05 |
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