TWI539623B - 發光元件 - Google Patents

發光元件 Download PDF

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Publication number
TWI539623B
TWI539623B TW101104335A TW101104335A TWI539623B TW I539623 B TWI539623 B TW I539623B TW 101104335 A TW101104335 A TW 101104335A TW 101104335 A TW101104335 A TW 101104335A TW I539623 B TWI539623 B TW I539623B
Authority
TW
Taiwan
Prior art keywords
light
buffer layer
emitting element
plane
nitride
Prior art date
Application number
TW101104335A
Other languages
English (en)
Chinese (zh)
Other versions
TW201310696A (zh
Inventor
沈希宰
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201310696A publication Critical patent/TW201310696A/zh
Application granted granted Critical
Publication of TWI539623B publication Critical patent/TWI539623B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
TW101104335A 2011-08-31 2012-02-10 發光元件 TWI539623B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Publications (2)

Publication Number Publication Date
TW201310696A TW201310696A (zh) 2013-03-01
TWI539623B true TWI539623B (zh) 2016-06-21

Family

ID=45528963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101104335A TWI539623B (zh) 2011-08-31 2012-02-10 發光元件

Country Status (6)

Country Link
US (1) US8729576B2 (enExample)
EP (1) EP2565940B1 (enExample)
JP (1) JP6005372B2 (enExample)
KR (1) KR101883840B1 (enExample)
CN (1) CN102969420A (enExample)
TW (1) TWI539623B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2862199A4 (en) * 2012-06-18 2016-02-24 Government Of The U S A As Represented By The Secretary Of The Navy PLASMA-SUPPORTED ATOMIC LAYER EPITAXIS OF CUBIC AND HEXAGONAL INN FILMS AND ALLOYS THEREOF WITH AIN AT LOW TEMPERATURES
US10804426B2 (en) * 2014-10-31 2020-10-13 ehux, Inc. Planar surface mount micro-LED for fluidic assembly
JP6646934B2 (ja) * 2015-02-10 2020-02-14 アルパッド株式会社 半導体発光装置及び半導体発光装置の製造方法
WO2017005188A1 (en) * 2015-07-06 2017-01-12 The Hong Kong University Of Science And Technology Semiconductor device and method of forming the same
US10665750B2 (en) * 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
CN111477726A (zh) * 2019-05-08 2020-07-31 伊乐视有限公司 用于流体组装的平面表面贴装微型led及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3779766B2 (ja) * 1996-02-29 2006-05-31 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体装置
JP2001294500A (ja) * 2000-02-07 2001-10-23 Japan Energy Corp 窒化ガリウム系化合物半導体結晶の成長方法
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
JP4277617B2 (ja) * 2003-08-08 2009-06-10 日立電線株式会社 半導体発光素子の製造方法
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007103774A (ja) * 2005-10-06 2007-04-19 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
EP1788619A3 (en) * 2005-11-18 2009-09-09 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007165613A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP4888857B2 (ja) * 2006-03-20 2012-02-29 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体薄膜およびｉｉｉ族窒化物半導体発光素子
JP2008042076A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子及びその製造方法
JP4605193B2 (ja) * 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4944738B2 (ja) * 2007-11-13 2012-06-06 古河機械金属株式会社 ＧａＮ半導体基板の製造方法
KR101405693B1 (ko) * 2007-11-26 2014-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN102067335A (zh) * 2008-08-22 2011-05-18 晶能光电（江西）有限公司 一种在复合衬底上制备InGaAlN发光器件的方法
JP2010238954A (ja) * 2009-03-31 2010-10-21 Nec Corp 半導体発光素子、光ピックアップ装置、光源装置および半導体発光素子の製造方法
JP5434573B2 (ja) * 2009-12-24 2014-03-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子

Also Published As

Publication number Publication date
JP2013055319A (ja) 2013-03-21
EP2565940A2 (en) 2013-03-06
US8729576B2 (en) 2014-05-20
KR101883840B1 (ko) 2018-08-01
JP6005372B2 (ja) 2016-10-12
TW201310696A (zh) 2013-03-01
EP2565940A3 (en) 2015-02-11
CN102969420A (zh) 2013-03-13
US20120138957A1 (en) 2012-06-07
KR20130024411A (ko) 2013-03-08
EP2565940B1 (en) 2016-07-06

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