KR101883840B1 - 발광소자 - Google Patents

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Publication number
KR101883840B1
KR101883840B1 KR1020110087852A KR20110087852A KR101883840B1 KR 101883840 B1 KR101883840 B1 KR 101883840B1 KR 1020110087852 A KR1020110087852 A KR 1020110087852A KR 20110087852 A KR20110087852 A KR 20110087852A KR 101883840 B1 KR101883840 B1 KR 101883840B1
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KR
South Korea
Prior art keywords
plane
buffer layer
light emitting
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110087852A
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English (en)
Korean (ko)
Other versions
KR20130024411A (ko
Inventor
심희재
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110087852A priority Critical patent/KR101883840B1/ko
Priority to EP12151755.1A priority patent/EP2565940B1/en
Priority to US13/363,096 priority patent/US8729576B2/en
Priority to CN2012100281805A priority patent/CN102969420A/zh
Priority to TW101104335A priority patent/TWI539623B/zh
Priority to JP2012057736A priority patent/JP6005372B2/ja
Publication of KR20130024411A publication Critical patent/KR20130024411A/ko
Application granted granted Critical
Publication of KR101883840B1 publication Critical patent/KR101883840B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
KR1020110087852A 2011-08-31 2011-08-31 발광소자 Expired - Fee Related KR101883840B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자
EP12151755.1A EP2565940B1 (en) 2011-08-31 2012-01-19 Light emitting device
US13/363,096 US8729576B2 (en) 2011-08-31 2012-01-31 Light emitting device
CN2012100281805A CN102969420A (zh) 2011-08-31 2012-02-03 发光装置
TW101104335A TWI539623B (zh) 2011-08-31 2012-02-10 發光元件
JP2012057736A JP6005372B2 (ja) 2011-08-31 2012-03-14 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Publications (2)

Publication Number Publication Date
KR20130024411A KR20130024411A (ko) 2013-03-08
KR101883840B1 true KR101883840B1 (ko) 2018-08-01

Family

ID=45528963

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110087852A Expired - Fee Related KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Country Status (6)

Country Link
US (1) US8729576B2 (enExample)
EP (1) EP2565940B1 (enExample)
JP (1) JP6005372B2 (enExample)
KR (1) KR101883840B1 (enExample)
CN (1) CN102969420A (enExample)
TW (1) TWI539623B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9773666B2 (en) * 2012-06-18 2017-09-26 The United States Of America, As Represented By The Secretary Of The Navy Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
US10804426B2 (en) * 2014-10-31 2020-10-13 ehux, Inc. Planar surface mount micro-LED for fluidic assembly
JP6646934B2 (ja) * 2015-02-10 2020-02-14 アルパッド株式会社 半導体発光装置及び半導体発光装置の製造方法
CN107851605B (zh) * 2015-07-06 2021-11-26 香港科技大学 半导体器件及其制作方法
US10665750B2 (en) * 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
CN111477726A (zh) * 2019-05-08 2020-07-31 伊乐视有限公司 用于流体组装的平面表面贴装微型led及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064113A (ja) * 2003-08-08 2005-03-10 Hitachi Cable Ltd 半導体発光素子及びその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3779766B2 (ja) * 1996-02-29 2006-05-31 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体装置
JP2001294500A (ja) * 2000-02-07 2001-10-23 Japan Energy Corp 窒化ガリウム系化合物半導体結晶の成長方法
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007103774A (ja) * 2005-10-06 2007-04-19 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
EP1788619A3 (en) * 2005-11-18 2009-09-09 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007165613A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP4888857B2 (ja) * 2006-03-20 2012-02-29 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体薄膜およびｉｉｉ族窒化物半導体発光素子
JP2008042076A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子及びその製造方法
JP4605193B2 (ja) * 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4944738B2 (ja) * 2007-11-13 2012-06-06 古河機械金属株式会社 ＧａＮ半導体基板の製造方法
KR101405693B1 (ko) * 2007-11-26 2014-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8435816B2 (en) * 2008-08-22 2013-05-07 Lattice Power (Jiangxi) Corporation Method for fabricating InGaAlN light emitting device on a combined substrate
JP2010238954A (ja) * 2009-03-31 2010-10-21 Nec Corp 半導体発光素子、光ピックアップ装置、光源装置および半導体発光素子の製造方法
JP5434573B2 (ja) * 2009-12-24 2014-03-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064113A (ja) * 2003-08-08 2005-03-10 Hitachi Cable Ltd 半導体発光素子及びその製造方法

Also Published As

Publication number Publication date
KR20130024411A (ko) 2013-03-08
JP2013055319A (ja) 2013-03-21
US20120138957A1 (en) 2012-06-07
JP6005372B2 (ja) 2016-10-12
EP2565940A3 (en) 2015-02-11
EP2565940A2 (en) 2013-03-06
EP2565940B1 (en) 2016-07-06
TW201310696A (zh) 2013-03-01
US8729576B2 (en) 2014-05-20
CN102969420A (zh) 2013-03-13
TWI539623B (zh) 2016-06-21

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