JP5113330B2 - 窒化ガリウム半導体発光素子 - Google Patents
窒化ガリウム半導体発光素子 Download PDFInfo
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- JP5113330B2 JP5113330B2 JP2005346845A JP2005346845A JP5113330B2 JP 5113330 B2 JP5113330 B2 JP 5113330B2 JP 2005346845 A JP2005346845 A JP 2005346845A JP 2005346845 A JP2005346845 A JP 2005346845A JP 5113330 B2 JP5113330 B2 JP 5113330B2
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- 229910002601 GaN Inorganic materials 0.000 title claims description 145
- 239000004065 semiconductor Substances 0.000 title claims description 102
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 53
- 229910002704 AlGaN Inorganic materials 0.000 claims description 56
- 238000005253 cladding Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052594 sapphire Inorganic materials 0.000 claims description 21
- 239000010980 sapphire Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 28
- 239000013078 crystal Substances 0.000 description 22
- 230000004888 barrier function Effects 0.000 description 13
- 230000010287 polarization Effects 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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- Semiconductor Lasers (AREA)
Description
2 窒化ガリウム半導体結晶
3 GaN基板
4 GaN基板
Claims (5)
- 基板上に少なくともn型半導体層、発光領域、p型半導体層の順に積層された積層構造を備え、前記p型半導体層側に形成されるとともに1019cm−3以下のMgを含むAlGaN半導体層と、該AlGaN半導体層よりも前記n型半導体層が存在する方向に位置し、前記積層構造の一層であるGaN半導体層との第1の界面を有する窒化ガリウム半導体発光素子であって、
前記AlGaN半導体層からなるp型電子ブロック層上にp型クラッド層が積層され、
前記n型半導体層からp型クラッド層までは、成長表面がGaNの窒素極性でもGa極性でもない無極性方向で形成されていることを特徴とする窒化ガリウム半導体発光素子。 - 前記p型クラッド層はAlGaNとGaNの超格子層で構成され、前記p型電子ブロック層のAlXGa1―XN(0<X<1)半導体層と前記p型クラッド層のAlYGa1−YN(0≦Y<1)半導体層(X>Y)との第2の界面が形成されていることを特徴とする請求項1に記載の窒化ガリウム半導体発光素子。
- 前記積層構造が積層される側の前記基板表面はサファイア基板のR面で構成され、前記積層構造における前記成長表面はA面であることを特徴とする請求項1又は請求項2に記載の窒化ガリウム半導体発光素子。
- 前記n型半導体層にはn型超格子層が含まれており、前記n型超格子層はn型GaN層とn型InGaN層を交互に積層した超格子構造からなることを特徴とする請求項1〜請求項3のいずれか1項に記載された窒化ガリウム半導体発光素子。
- 前記p型半導体層にはp型コンタクト層が含まれており、前記p型コンタクト層はp型GaN層からなることを特徴とする請求項1〜請求項4のいずれか1項に記載の窒化ガリウム半導体発光素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346845A JP5113330B2 (ja) | 2005-11-30 | 2005-11-30 | 窒化ガリウム半導体発光素子 |
CN2006800451527A CN101322292B (zh) | 2005-11-30 | 2006-11-29 | 氮化镓半导体发光元件 |
EP06833656A EP1959530A1 (en) | 2005-11-30 | 2006-11-29 | Gallium nitride semiconductor light emitting element |
PCT/JP2006/323853 WO2007063920A1 (ja) | 2005-11-30 | 2006-11-29 | 窒化ガリウム半導体発光素子 |
US12/085,836 US7872269B2 (en) | 2005-11-30 | 2006-11-29 | Gallium nitride semiconductor light emitting element |
KR1020087015914A KR20080075212A (ko) | 2005-11-30 | 2006-11-29 | 질화 갈륨 반도체 발광 소자 |
TW095144430A TW200737632A (en) | 2005-11-30 | 2006-11-30 | Gallium nitride semiconductor light-emitting element |
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JP2005346845A JP5113330B2 (ja) | 2005-11-30 | 2005-11-30 | 窒化ガリウム半導体発光素子 |
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JP2007157766A JP2007157766A (ja) | 2007-06-21 |
JP5113330B2 true JP5113330B2 (ja) | 2013-01-09 |
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JP2005346845A Expired - Fee Related JP5113330B2 (ja) | 2005-11-30 | 2005-11-30 | 窒化ガリウム半導体発光素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7872269B2 (ja) |
EP (1) | EP1959530A1 (ja) |
JP (1) | JP5113330B2 (ja) |
KR (1) | KR20080075212A (ja) |
CN (1) | CN101322292B (ja) |
TW (1) | TW200737632A (ja) |
WO (1) | WO2007063920A1 (ja) |
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2005
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2006
- 2006-11-29 US US12/085,836 patent/US7872269B2/en not_active Expired - Fee Related
- 2006-11-29 WO PCT/JP2006/323853 patent/WO2007063920A1/ja active Application Filing
- 2006-11-29 CN CN2006800451527A patent/CN101322292B/zh not_active Expired - Fee Related
- 2006-11-29 EP EP06833656A patent/EP1959530A1/en not_active Withdrawn
- 2006-11-29 KR KR1020087015914A patent/KR20080075212A/ko not_active Application Discontinuation
- 2006-11-30 TW TW095144430A patent/TW200737632A/zh unknown
Also Published As
Publication number | Publication date |
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JP2007157766A (ja) | 2007-06-21 |
KR20080075212A (ko) | 2008-08-14 |
CN101322292A (zh) | 2008-12-10 |
EP1959530A1 (en) | 2008-08-20 |
TW200737632A (en) | 2007-10-01 |
WO2007063920A1 (ja) | 2007-06-07 |
US7872269B2 (en) | 2011-01-18 |
US20090146160A1 (en) | 2009-06-11 |
CN101322292B (zh) | 2012-04-18 |
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