KR100902109B1 - 질화 갈륨계 화합물 반도체 소자 - Google Patents
질화 갈륨계 화합물 반도체 소자 Download PDFInfo
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- KR100902109B1 KR100902109B1 KR1020037013157A KR20037013157A KR100902109B1 KR 100902109 B1 KR100902109 B1 KR 100902109B1 KR 1020037013157 A KR1020037013157 A KR 1020037013157A KR 20037013157 A KR20037013157 A KR 20037013157A KR 100902109 B1 KR100902109 B1 KR 100902109B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 106
- -1 Gallium nitride compound Chemical class 0.000 title claims description 62
- 239000012535 impurity Substances 0.000 claims abstract description 119
- 238000005253 cladding Methods 0.000 claims abstract description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 511
- 239000010408 film Substances 0.000 description 82
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 52
- 150000004767 nitrides Chemical class 0.000 description 49
- 239000007789 gas Substances 0.000 description 48
- 239000011777 magnesium Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 32
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 28
- 229910021529 ammonia Inorganic materials 0.000 description 26
- 230000010355 oscillation Effects 0.000 description 22
- 230000001681 protective effect Effects 0.000 description 19
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 12
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 9
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Ceramic Products (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Abstract
Description
Claims (12)
- In를 포함하며 n형 불순물을 도프한 n형 질화 갈륨계 화합물 반도체로 이루어진 활성층과, Al를 포함하며 p형 불순물을 도프한 p형 질화 갈륨계 화합물 반도체로 이루어진 p형 클래드층을 가지는 질화 갈륨계 화합물 반도체 소자에 있어서,상기 활성층과 상기 p형 클래드층의 사이에, 상기 활성층보다 저농도의 n형 불순물과 상기 p형 클래드층보다 저농도의 p형 불순물을 포함하는 질화 갈륨계 화합물 반도체로 이루어진 제 1 캡층과 Al를 포함하며 p형 불순물을 도프한 p형 질화 갈륨계 화합물 반도체로 이루어진 제 2 캡층을, 상기 제 1 캡층이 상기 활성층과 상기 제 2 캡층 사이에 위치하도록 적층한 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층은 상기 활성층에 접하여 형성되고, 또한 상기 제 2 캡층은 제 1 캡층에 접하여 형성되어 있는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층의 n형 불순물 및 p형 불순물의 농도가 1.0 ×1017cm-3이하이고, 상기 제 2 캡층의 p형 불순물의 농도가 8.0 ×1018 ~ 2.0 ×1019cm-3인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층의 불순물은 상기 활성층으로부터의 열확산에 의한 n형 불순물과 상기 제 2 캡층으로부터의 열확산에 의한 p형 불순물을 포함하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층의 막두께가, 상기 활성층에 도프된 n형 불순물이 상기 제 1 캡층의 성장온도에서 상기 제 1 캡층 내에서 나타내는 열확산 길이와 상기 제 2 캡층에 도프된 p형 불순물이 상기 제 2 캡층의 성장온도에서 상기 제 1 캡층 내에서 나타내는 열확산 길이의 합계 길이 이하인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층이 GaN층, InxGa1-xN층(0<x<1) 및 AlyGa1-yN층(0<y<1)으로 이루어진 군(群)으로부터 선택된 1층 또는 이들의 적층체로 이루어지는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층이 GaN층으로 이루어지고, 막두께가 15~100Å인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층이 InxGa1-xN층(0<x<1)으로 이루어지고, 막두께가 15~150Å인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 1 캡층이 AlyGa1-yN층(0<y<1)으로 이루어지고, 막두께가 15~50Å인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 제 2 캡층의 막두께가 15~500Å인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 활성층이 In를 포함하는 질화 갈륨계 화합물 반도체로 이루어진 우물층과, n형 불순물을 첨가한 질화 갈륨계 화합물 반도체로 이루어진 장벽층을 교대로 적층하여 구성되고, 상기 제 1 캡층이 상기 장벽층보다 저농도의 n형 불순물을 포함하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
- 제 1 항에 있어서,상기 활성층이 질화 갈륨계 화합물 반도체로 이루어진 우물층과 질화 갈륨계 화합물 반도체로 이루어진 장벽층을 교대로 적층하여 이루어지며, 상기 활성층에 포함되는 우물층 또는 장벽층 중, n형 불순물을 첨가한 층으로서 가장 제 1 캡층에 가까운 층의 n형 불순물 농도는 5.0 ×1017 ~ 1.0 ×1019cm-3인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 소자.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2001114025 | 2001-04-12 | ||
JPJP-P-2001-00114025 | 2001-04-12 | ||
PCT/JP2002/003475 WO2002084831A1 (en) | 2001-04-12 | 2002-04-08 | Gallium nitride compound semiconductor element |
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KR20040018348A KR20040018348A (ko) | 2004-03-03 |
KR100902109B1 true KR100902109B1 (ko) | 2009-06-09 |
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KR1020037013157A KR100902109B1 (ko) | 2001-04-12 | 2002-04-08 | 질화 갈륨계 화합물 반도체 소자 |
Country Status (9)
Country | Link |
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US (1) | US7230263B2 (ko) |
EP (1) | EP1387453B1 (ko) |
JP (1) | JP4032803B2 (ko) |
KR (1) | KR100902109B1 (ko) |
CN (1) | CN1252883C (ko) |
AT (1) | ATE448589T1 (ko) |
CA (1) | CA2444273C (ko) |
DE (1) | DE60234330D1 (ko) |
WO (1) | WO2002084831A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101408610B1 (ko) * | 2009-12-21 | 2014-06-17 | 가부시끼가이샤 도시바 | 질화물 반도체 발광 소자 및 그 제조 방법 |
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Also Published As
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JP2002374043A (ja) | 2002-12-26 |
EP1387453A4 (en) | 2008-10-22 |
CA2444273A1 (en) | 2002-10-24 |
CN1252883C (zh) | 2006-04-19 |
WO2002084831A1 (en) | 2002-10-24 |
KR20040018348A (ko) | 2004-03-03 |
US20040124500A1 (en) | 2004-07-01 |
JP4032803B2 (ja) | 2008-01-16 |
CN1502154A (zh) | 2004-06-02 |
ATE448589T1 (de) | 2009-11-15 |
EP1387453A1 (en) | 2004-02-04 |
DE60234330D1 (de) | 2009-12-24 |
EP1387453B1 (en) | 2009-11-11 |
US7230263B2 (en) | 2007-06-12 |
CA2444273C (en) | 2012-05-22 |
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