SG63757A1 - Adding impurities to improve the efficiency of allngan quantum well led's - Google Patents

Adding impurities to improve the efficiency of allngan quantum well led's

Info

Publication number
SG63757A1
SG63757A1 SG1997003691A SG1997003691A SG63757A1 SG 63757 A1 SG63757 A1 SG 63757A1 SG 1997003691 A SG1997003691 A SG 1997003691A SG 1997003691 A SG1997003691 A SG 1997003691A SG 63757 A1 SG63757 A1 SG 63757A1
Authority
SG
Singapore
Prior art keywords
allngan
efficiency
improve
quantum well
adding impurities
Prior art date
Application number
SG1997003691A
Inventor
Daniel A Steigerwald
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of SG63757A1 publication Critical patent/SG63757A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
SG1997003691A 1997-03-12 1997-10-08 Adding impurities to improve the efficiency of allngan quantum well led's SG63757A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81509797A 1997-03-12 1997-03-12

Publications (1)

Publication Number Publication Date
SG63757A1 true SG63757A1 (en) 1999-03-30

Family

ID=25216843

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003691A SG63757A1 (en) 1997-03-12 1997-10-08 Adding impurities to improve the efficiency of allngan quantum well led's

Country Status (4)

Country Link
JP (1) JPH10256601A (en)
DE (1) DE19753470A1 (en)
GB (1) GB2323210A (en)
SG (1) SG63757A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1142598C (en) 1997-07-25 2004-03-17 日亚化学工业株式会社 Nitride semiconductor device
EP0996173B1 (en) * 1998-10-23 2015-12-30 Xerox Corporation Semiconductor structures including polycrystalline GaN layers and method of manufacturing
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
JP3719047B2 (en) 1999-06-07 2005-11-24 日亜化学工業株式会社 Nitride semiconductor device
DE10015371A1 (en) * 2000-03-28 2001-10-18 Huga Optotech Inc Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US7230263B2 (en) 2001-04-12 2007-06-12 Nichia Corporation Gallium nitride compound semiconductor element
TWI275220B (en) 2001-11-05 2007-03-01 Nichia Corp Nitride semiconductor device
JP3898537B2 (en) 2002-03-19 2007-03-28 日本電信電話株式会社 Nitride semiconductor thin film forming method and nitride semiconductor light emitting device
WO2004051759A1 (en) * 2002-12-03 2004-06-17 Nec Corporation Semiconductor optical device having quantum well structure and its manufacturing method
RU2306634C1 (en) * 2006-08-08 2007-09-20 Закрытое Акционерное Общество "Светлана - Оптоэлектроника" Light-emitting semiconductor heterostructure
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
CN112366255B (en) * 2020-09-30 2021-12-07 华灿光电（浙江）有限公司 Light emitting diode epitaxial wafer and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832112A (en) * 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd Group iii nitride semiconductor light emitting element
EP0772249B1 (en) * 1995-11-06 2006-05-03 Nichia Corporation Nitride semiconductor device

Also Published As

Publication number Publication date
GB9805086D0 (en) 1998-05-06
GB2323210A (en) 1998-09-16
DE19753470A1 (en) 1998-09-24
JPH10256601A (en) 1998-09-25

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