GB2323210A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- GB2323210A GB2323210A GB9805086A GB9805086A GB2323210A GB 2323210 A GB2323210 A GB 2323210A GB 9805086 A GB9805086 A GB 9805086A GB 9805086 A GB9805086 A GB 9805086A GB 2323210 A GB2323210 A GB 2323210A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitting device
- light
- impurity
- quantum well
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 230000000694 effects Effects 0.000 claims abstract description 4
- 230000006911 nucleation Effects 0.000 claims description 10
- 238000010899 nucleation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000007480 spreading Effects 0.000 claims description 4
- 238000003892 spreading Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000011777 magnesium Substances 0.000 description 8
- 239000000370 acceptor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002602 lanthanoids Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
In a QW LED employing the Al In Ga N material system an intentional impurity is introduced in the quantum well active region to increase the efficiency of the LED (10) and to increase the emission wavelength beyond that of an undoped QW LED. In addition, an intentional impurity similar to that found in an adjacent layer can reduce the uncontrollable or undesirable effects of impurity diffusion.
Description
2323210 1 1 LIGHT EMITTING DEVICE The invention relates to a semi
conductor light-emitting device.
ffighly efficient visible devices (LEDs) have been produced in the redl, orange, and yellow spectral regions by employing the A4Ga,..As and In.3(A4Gaj.JP material systems and Double Heterostructure device sftuctures which employ a "bulk" active region in the thickness range of 0. 1 to 5.0 un in thickness. These highly efficient LEDs use a direct band-to-band transition to produce the light of an appropriate wavelength.
Recently highly efficient blue LEDs, commercialized by Nichia and Toyoda Gosei, employ the AlInGaN materials system in conjunctionwrith a "bulk" active region, 0.05 to 0. 10 pm in thickness, which is "co-doped" with both silicon and zinc. Co-doping has two positive effects. First, the extremely high defect density associated with epitaxial GaN leads to inefficient band-to-band transitions in undoped material, whereas the ZnSi pairs provide an extremely efficient mechanism for light emission. Second, the selection of Zn-Si pairs shifts the wave!ength substantially, from 380 run to 450 rim for the emission from the band-to-band and Zn-Si impurity centers, respectively. The shift in wavelength alone increases the detection efficiency of the human eye by almost a factor of 1000. Such an LED structure is acceptable for the blue spectral region, however, when attempts are made to shift the wavelength into the green spectral region by increasing the mole fraction of indium in the active 2 1/-111 region (x in the formula In,,GaiI..N), the result is an LED of poor color purity, with a "whitish" color. There is a great commercial need for highly efficient, spectrally pure green and blue-green LEDs.
Highly efficient blue and green LEDs have been commercialized which employ the same AlInGaN materials system in conjunction with an extremely thin quantum well (QW) active region, with a thickness of approximately 3 run. These devices employ an undoped QW region and direct band-to-band tramitions to achieve the high efficiency and purer colors. Special processes and techniques are used to eliminate dopant incorporation and diffusion.
The present lay seeks to provide an improved fight device.
According to an aspect of the present invention there is provided a figbtemitting device comprising a substrate; a GaN nucleation layer, positioned on the substrate; a Si-doped GaN current spreading layer positioned over the GaN nucleation layer; a first and second confining layers positioned over the Si-doped GaN current spreading layer wherein the first and second confining layers contain a first and second impurity, respectively; and a thin quantum well active region with a quantum well impurity, interposing the first and second confining layers wherein the quantum well impurity is selected to increase the fight emission vroperties of the light- i '' i g device.
3 In the preferred embodiment, an intentional impurity is introduced in a quantum well (QW) LED active region to increase the efficiency of the LED and to increase the emission wavelength beyond that of an undoped QW LED. In addition, an intentional impurity similar to that found in an adjacent layer can reduce the uncontrollable or undesirable effects of impurity diffusion.
Preferably, a thiii GaN nucleation layer is grown on a sapphire substrate. A thick Si-doped GaN layer is grown over the thin GaN nucleation layer. A first confining layer consisting of GaN: Mg is grown over an n-type GaN layer. A thin In. Gal, N QW active region is grown over the first confining layer. The thin QW active region has been optionally doped. A second confming layer consisting of GaN-based compound is positioned over the thin QW active region. The first and second confming layers are doped, either alone or in combination.
---1 4 An embodiment of the present invention as descriffied below, by way of example only, with reference to the accompanying drawings, in which:
Figure 1 ates an embodiment of a light emitting device; and Figure 2 illustrates a flowchart of a preferred method for producing the device shown in Figure 1.
Figure I illustrates a preferred embodiment of a light emitting device 10. A GaN nucleation layer 14 is positioned on a substrate 12, such as a sapphire substrate. A thick n-type GaN layer 16, doped with Si impurities, is formed over the GaN nucleation layer 14. A first confining layer 18 consisting of a GaN-based compound, doped with Mg impurities, is positioned over the thick Si-doped GaN layer 16. A thin INGa,-.,N quantum well (QW) active region 20 is positioned over the first confining layer 18. The thin Q)X active region 20 has been intentionally doped with magnesium (Mg). A second confining layer 22 consisting of AlGaN that is optionally doped with Mg is positioned over the thin QW active region 20. The first and second confining layers are doped with Mg, either alone or in combination. A contacting layer 24 consisting of a GaN-based compound, doped with Mg is positioned over the second confining layer 22.
Me intentional impurity introduced in a quantum well (QW) LED active region increases the efficiency of the LED and increases the emission wavelength beyond that of an undoped QW LED. In addition, adding a similar intentional. impurity to one of the confining layers can reduce the uncontrollable or undesirable effects of impurity diffusion. Alternatively, the layers "confining" the QW active region may include Al, ,Gal.,,N. If improving the internal efficiency of the QW active region is desired, these impurities may be donors or acceptors. If improving the injection efficiency of the QW active region is desired, the impurities are acceptors. Donors may be from Group VI such as oxygen, sulfur, selenium. or tellurium or Group IV such as silicon, germanium, or tin. Acceptors may be from Group IIA, e.g. magnesium, beryllium, or calcium, or Group IIB e.g. zinc or cadmium, or Group IV, e.g. carbon. In addition, rare earth elements from lanthanide group have been shown to be efficient emission centers in other materials and may be highly efficient in the AlInGaN material system.
6 11 1 Ile preferred embodirnent influences the overall efficiency of a fight g diode by four ct methods. Ile overall efficiency of a visible LED may be defined as the product of several individual, independent efficiencies, as:
TIM Tlim X llin X llcxuw X Tidcw The internal efficiency. Tli,,,w, is the fraction of injected minority carriers which emit photons. The injection efficiency, is the fi-action of the current that is transported into the active region. The extraction efficiency, is the fraction of photons which escape the crystal. For visible LEDs, the detector efficiency, Tld.,, ,, is the magnitude of the eye response per unit of radiant power.
The internal efficiency is increased by the impurity-related emission, which is more efficient than the near band-edge emission due to the high density of crystal defects.
The injection efficiency is increased due to the change in minority carrier injection from holes to electrons. This is important for two reasons; first the ratio of the electron concentration in the n-layer, to the hole concentration in the p-layer is significantly greater than 1, favoring electron injection. Second, the electrons in GaNbased material have a much lower effective mass, and a much higher mobility than the holes.
The extraction efficiency can be enhanced, as the impurity-related emission is not as strongly absorbed in the active region as near bandedge light.
The detector efficiency of blue and green LEDs are strongly affected by the emission wavelength, with an increae in wavelength increasing the response of the human eye. The impurity-related emissions in the prefered embodiment shift the emission wavelength longer, resuking in enhanced detection.
Figure 2 illustrates a process flow chart for the device shown in Figure I - In step 40, the first thin GaN nucleation layer is formed directly on the sapphire substrate 7 1 j at a low growth temperature such as 520 C. In steg 50, the GaN:Si layer is formed directly on the nucleation layer at growth temperatures at approximately 1050C, while the thickness may vary between 2 gm to 5 pin in thickness. In step 60, the first confining layer is formed over the GaN:Si layer. In step 70, the Mg-doped InGaN QW active region is formed over the first confining layer at a growth temperature that ranges from 650C to 850C, while the thickness of the QW active region is typically 3 mn in thickness. In step 80, the Mg-doped GaN layer is formed over the QW active region at a growth temperature that ranges from 650C to I I OOC while the thickness may vary between 0. 1 to 1.0:m.
These layers may be grown using one of many available techniques such as organometallic vapor phase epitaxy (OMVPE), metal-organic chemical vapor deposition (MOCVD), molecular beam qitaxy (MBE), gas phase MBE (GPMBE), or hydrWe, vapor phase e;ftcy (HVPE).
The disclosures in United States patent appfication, no. 08/8 15, 097, from which this application claims priority, and in the abstract accompanying this application are incorporated herein by reference.
8
Claims (9)
1. A light-emitting device comprising: a substrate; A GaN nucleation layer positioned on the substrate; a Si-doped GaN current spreading layer positioned over the GaN nucleation layer; first and second conlining layers positioned over the Si-doped GaN current spreading layer, wherein the first and second confining layers contain a first and second impurity, respectively: and a thin quantum well active region with a quantum well impurity, interposing the first and second confining layers, wherein the quantum well impurity is selected to increase the light emission properties of the light-emitting device.
2. A light-emitting device according to claim 1, wherein the first impurity is selected to increase the light emission property of the lightemittizig device by improving the injection efficiency.
3. A light-emitting device according to claim 1, wherein the quantum well and first impurities are the same element, wherein the element is selected to effect impurity diflusion in the active region.
4. A fight-emitting device according to claim 1, 2 or 3, wherein the quantum well impurity is a donor element.
5. A light-emitting device according to claiin 1, 2, or 3, wherein the quantum well impurity is an acceptor element.
1I1 9
6. A light emitting device according to claim 5, wherein the acceptor element is selected from a group comprising Group IIA and Group HB elements.
7. A light- g device according to claim 6, wherein the acceptor element is magneshun
8. A light-emitting device substantially as hereinbefore described with reference to and as ated in the accompanying drawings.
9. A method of producing a fight-emitting device substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81509797A | 1997-03-12 | 1997-03-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9805086D0 GB9805086D0 (en) | 1998-05-06 |
| GB2323210A true GB2323210A (en) | 1998-09-16 |
Family
ID=25216843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9805086A Withdrawn GB2323210A (en) | 1997-03-12 | 1998-03-10 | Light emitting device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH10256601A (en) |
| DE (1) | DE19753470A1 (en) |
| GB (1) | GB2323210A (en) |
| SG (1) | SG63757A1 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1189289A1 (en) * | 1999-06-07 | 2002-03-20 | Nichia Corporation | Nitride semiconductor device |
| US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| WO2004051759A1 (en) * | 2002-12-03 | 2004-06-17 | Nec Corporation | Semiconductor optical device having quantum well structure and its manufacturing method |
| US6835956B1 (en) | 1999-02-09 | 2004-12-28 | Nichia Corporation | Nitride semiconductor device and manufacturing method thereof |
| US7230263B2 (en) | 2001-04-12 | 2007-06-12 | Nichia Corporation | Gallium nitride compound semiconductor element |
| US7358522B2 (en) | 2001-11-05 | 2008-04-15 | Nichia Corporation | Semiconductor device |
| EP2071638A1 (en) * | 2006-08-08 | 2009-06-17 | "Svetlana-Optoelektronika" | Semiconductor light-emitting heterostructure |
| US7977687B2 (en) | 2008-05-09 | 2011-07-12 | National Chiao Tung University | Light emitter device |
| US8592841B2 (en) | 1997-07-25 | 2013-11-26 | Nichia Corporation | Nitride semiconductor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0996173B1 (en) * | 1998-10-23 | 2015-12-30 | Xerox Corporation | Semiconductor structures including polycrystalline GaN layers and method of manufacturing |
| DE10015371A1 (en) * | 2000-03-28 | 2001-10-18 | Huga Optotech Inc | Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate |
| JP3898537B2 (en) | 2002-03-19 | 2007-03-28 | 日本電信電話株式会社 | Nitride semiconductor thin film forming method and nitride semiconductor light emitting device |
| CN112366255B (en) * | 2020-09-30 | 2021-12-07 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832112A (en) * | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element |
| EP0772249A2 (en) * | 1995-11-06 | 1997-05-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
-
1997
- 1997-10-08 SG SG1997003691A patent/SG63757A1/en unknown
- 1997-12-02 DE DE1997153470 patent/DE19753470A1/en active Pending
-
1998
- 1998-02-19 JP JP3692498A patent/JPH10256601A/en active Pending
- 1998-03-10 GB GB9805086A patent/GB2323210A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832112A (en) * | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element |
| US5652438A (en) * | 1994-07-20 | 1997-07-29 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
| EP0772249A2 (en) * | 1995-11-06 | 1997-05-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| Inspec abstract number A9716-4255P-014 & Materials Science &Engineering B, Vol B43, no 1-3, p 265-8 * |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8592841B2 (en) | 1997-07-25 | 2013-11-26 | Nichia Corporation | Nitride semiconductor device |
| US6835956B1 (en) | 1999-02-09 | 2004-12-28 | Nichia Corporation | Nitride semiconductor device and manufacturing method thereof |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| EP1189289A4 (en) * | 1999-06-07 | 2008-01-16 | Nichia Corp | Nitride semiconductor device |
| USRE45672E1 (en) | 1999-06-07 | 2015-09-22 | Nichia Corporation | Nitride semiconductor device |
| EP2309556A3 (en) * | 1999-06-07 | 2012-04-04 | Nichia Corporation | Nitride semiconductor device |
| USRE42008E1 (en) | 1999-06-07 | 2010-12-28 | Nichia Corporation | Nitride semiconductor device |
| EP1189289A1 (en) * | 1999-06-07 | 2002-03-20 | Nichia Corporation | Nitride semiconductor device |
| US7646009B2 (en) | 2000-07-07 | 2010-01-12 | Nichia Corporation | Nitride semiconductor device |
| US8309948B2 (en) | 2000-07-07 | 2012-11-13 | Nichia Corporation | Nitride semiconductor device |
| US9444011B2 (en) | 2000-07-07 | 2016-09-13 | Nichia Corporation | Nitride semiconductor device |
| US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| US9130121B2 (en) | 2000-07-07 | 2015-09-08 | Nichia Corporation | Nitride semiconductor device |
| US7750337B2 (en) | 2000-07-07 | 2010-07-06 | Nichia Corporation | Nitride semiconductor device |
| US7119378B2 (en) | 2000-07-07 | 2006-10-10 | Nichia Corporation | Nitride semiconductor device |
| US8698126B2 (en) | 2000-07-07 | 2014-04-15 | Nichia Corporation | Nitride semiconductor device |
| US6838693B2 (en) | 2000-07-07 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
| US7230263B2 (en) | 2001-04-12 | 2007-06-12 | Nichia Corporation | Gallium nitride compound semiconductor element |
| US7667226B2 (en) | 2001-11-05 | 2010-02-23 | Nichia Corporation | Semiconductor device |
| US7358522B2 (en) | 2001-11-05 | 2008-04-15 | Nichia Corporation | Semiconductor device |
| WO2004051759A1 (en) * | 2002-12-03 | 2004-06-17 | Nec Corporation | Semiconductor optical device having quantum well structure and its manufacturing method |
| US7479448B2 (en) | 2002-12-03 | 2009-01-20 | Nec Corporation | Method of manufacturing a light emitting device with a doped active layer |
| EP2071638A4 (en) * | 2006-08-08 | 2014-07-16 | Svetlana Optoelektronika | Semiconductor light-emitting heterostructure |
| EP2071638A1 (en) * | 2006-08-08 | 2009-06-17 | "Svetlana-Optoelektronika" | Semiconductor light-emitting heterostructure |
| US7977687B2 (en) | 2008-05-09 | 2011-07-12 | National Chiao Tung University | Light emitter device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10256601A (en) | 1998-09-25 |
| GB9805086D0 (en) | 1998-05-06 |
| SG63757A1 (en) | 1999-03-30 |
| DE19753470A1 (en) | 1998-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |