JP2015059078A5 - - Google Patents
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- Publication number
- JP2015059078A5 JP2015059078A5 JP2013195717A JP2013195717A JP2015059078A5 JP 2015059078 A5 JP2015059078 A5 JP 2015059078A5 JP 2013195717 A JP2013195717 A JP 2013195717A JP 2013195717 A JP2013195717 A JP 2013195717A JP 2015059078 A5 JP2015059078 A5 JP 2015059078A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal nitride
- nitride crystal
- crystal
- line segment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000013078 crystal Substances 0.000 claims 25
- 229910021482 group 13 metal Inorganic materials 0.000 claims 17
- 150000004767 nitrides Chemical class 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000005259 measurement Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195717A JP6263920B2 (ja) | 2013-09-20 | 2013-09-20 | ＧａＮ基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195717A JP6263920B2 (ja) | 2013-09-20 | 2013-09-20 | ＧａＮ基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017174489A Division JP6455575B2 (ja) | 2017-09-12 | 2017-09-12 | 第１３族金属窒化物基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015059078A JP2015059078A (ja) | 2015-03-30 |
| JP2015059078A5 true JP2015059078A5 (enExample) | 2016-06-09 |
| JP6263920B2 JP6263920B2 (ja) | 2018-01-24 |
Family
ID=52816887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013195717A Active JP6263920B2 (ja) | 2013-09-20 | 2013-09-20 | ＧａＮ基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6263920B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3255181A4 (en) * | 2015-02-06 | 2018-01-10 | Mitsubishi Chemical Corporation | GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL |
| JP6759831B2 (ja) * | 2016-08-08 | 2020-09-23 | 三菱ケミカル株式会社 | Ｃ面ＧａＮ基板 |
| JP7327532B2 (ja) * | 2020-10-07 | 2023-08-16 | 三菱ケミカル株式会社 | ＧａＮ単結晶およびＧａＮ単結晶製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011051849A (ja) * | 2009-09-03 | 2011-03-17 | Hitachi Cable Ltd | 窒化物半導体自立基板とその製造方法 |
-
2013
- 2013-09-20 JP JP2013195717A patent/JP6263920B2/ja active Active
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