JP2011032154A5 - - Google Patents
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- Publication number
- JP2011032154A5 JP2011032154A5 JP2010033955A JP2010033955A JP2011032154A5 JP 2011032154 A5 JP2011032154 A5 JP 2011032154A5 JP 2010033955 A JP2010033955 A JP 2010033955A JP 2010033955 A JP2010033955 A JP 2010033955A JP 2011032154 A5 JP2011032154 A5 JP 2011032154A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- ammonothermal method
- nitride
- nitride crystal
- ammonia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000013078 crystal Substances 0.000 claims 25
- 150000004767 nitrides Chemical class 0.000 claims 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 10
- 229910021529 ammonia Inorganic materials 0.000 claims 5
- 229910002601 GaN Inorganic materials 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 4
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims 2
- 229940107816 ammonium iodide Drugs 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 239000011630 iodine Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- KNVXMBKPERUFEN-UHFFFAOYSA-N azane;hydroiodide Chemical compound N.N.I KNVXMBKPERUFEN-UHFFFAOYSA-N 0.000 claims 1
- PBGKVJXGTXXFLO-UHFFFAOYSA-N azanium azane bromide Chemical compound N.[NH4+].[Br-] PBGKVJXGTXXFLO-UHFFFAOYSA-N 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010033955A JP5709122B2 (ja) | 2009-02-20 | 2010-02-18 | アモノサーマル法および窒化物結晶 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009037352 | 2009-02-20 | ||
| JP2009037352 | 2009-02-20 | ||
| JP2010033955A JP5709122B2 (ja) | 2009-02-20 | 2010-02-18 | アモノサーマル法および窒化物結晶 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011032154A JP2011032154A (ja) | 2011-02-17 |
| JP2011032154A5 true JP2011032154A5 (enExample) | 2013-04-04 |
| JP5709122B2 JP5709122B2 (ja) | 2015-04-30 |
Family
ID=43761600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010033955A Active JP5709122B2 (ja) | 2009-02-20 | 2010-02-18 | アモノサーマル法および窒化物結晶 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5709122B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6020440B2 (ja) * | 2011-03-22 | 2016-11-02 | 三菱化学株式会社 | 窒化物結晶の製造方法 |
| JP5953943B2 (ja) * | 2011-05-31 | 2016-07-20 | 三菱化学株式会社 | 窒化物半導体結晶の製造方法、反応容器および部材 |
| JP6074959B2 (ja) * | 2011-09-08 | 2017-02-08 | 三菱化学株式会社 | Ｉｉｉ族窒化物結晶及びその製造方法 |
| WO2013062042A1 (ja) | 2011-10-28 | 2013-05-02 | 三菱化学株式会社 | 窒化物結晶の製造方法および窒化物結晶 |
| JP2014062023A (ja) * | 2011-10-28 | 2014-04-10 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
| US9976229B2 (en) | 2012-03-29 | 2018-05-22 | Mitsubishi Chemical Corporation | Method for producing nitride single crystal |
| JP6192956B2 (ja) * | 2012-03-29 | 2017-09-06 | 国立大学法人東北大学 | 窒化物単結晶の製造方法 |
| JP6024335B2 (ja) * | 2012-09-21 | 2016-11-16 | 三菱化学株式会社 | 周期表第１３属金属窒化物半導体基板の製造方法 |
| JP5929807B2 (ja) * | 2013-03-26 | 2016-06-08 | 三菱化学株式会社 | ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4229624B2 (ja) * | 2002-03-19 | 2009-02-25 | 三菱化学株式会社 | 窒化物単結晶の製造方法 |
| US7063741B2 (en) * | 2002-03-27 | 2006-06-20 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
| WO2005121415A1 (en) * | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | Bulk mono-crystalline gallium-containing nitride and its application |
| JP2007169075A (ja) * | 2005-12-19 | 2007-07-05 | Nippon Kasei Chem Co Ltd | 窒化物含有成型体及び単結晶窒化物の製造方法 |
| JP5066639B2 (ja) * | 2006-10-16 | 2012-11-07 | 三菱化学株式会社 | 窒化物半導体の製造方法、窒化物単結晶、ウエハ及びデバイス |
| EP2092093A4 (en) * | 2006-10-25 | 2017-06-14 | The Regents of The University of California | Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby |
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2010
- 2010-02-18 JP JP2010033955A patent/JP5709122B2/ja active Active
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