SG11201906821PA - Process for manufacturing a two-dimensional film of hexagonal crystalline structure - Google Patents

Process for manufacturing a two-dimensional film of hexagonal crystalline structure

Info

Publication number
SG11201906821PA
SG11201906821PA SG11201906821PA SG11201906821PA SG11201906821PA SG 11201906821P A SG11201906821P A SG 11201906821PA SG 11201906821P A SG11201906821P A SG 11201906821PA SG 11201906821P A SG11201906821P A SG 11201906821PA SG 11201906821P A SG11201906821P A SG 11201906821PA
Authority
SG
Singapore
Prior art keywords
manufacturing
dimensional film
crystalline structure
hexagonal crystalline
film
Prior art date
Application number
SG11201906821PA
Inventor
Bruno Ghyselen
Jean-Marc Bethoux
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201906821PA publication Critical patent/SG11201906821PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Abstract

PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE 5 The invention relates to a process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular graphene, comprising: - the formation of a growth substrate (100), comprising the transfer of a single-crystal metal film (1) suitable for the 10 growth of said two-dimensional film on a support substrate (2), and - the epitaxial growth of the two-dimensional film (3) on the metal film of said substrate (100). [FIGURE 6] 15
SG11201906821PA 2017-02-02 2018-01-31 Process for manufacturing a two-dimensional film of hexagonal crystalline structure SG11201906821PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1750868A FR3062398B1 (en) 2017-02-02 2017-02-02 METHOD OF MANUFACTURING A SUBSTRATE FOR THE GROWTH OF A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE
PCT/FR2018/050217 WO2018142061A1 (en) 2017-02-02 2018-01-31 Process for manufacturing a two-dimensional film of hexagonal crystalline structure

Publications (1)

Publication Number Publication Date
SG11201906821PA true SG11201906821PA (en) 2019-08-27

Family

ID=58632458

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201906821PA SG11201906821PA (en) 2017-02-02 2018-01-31 Process for manufacturing a two-dimensional film of hexagonal crystalline structure

Country Status (8)

Country Link
US (2) US11913134B2 (en)
EP (1) EP3577257A1 (en)
JP (1) JP7341059B2 (en)
KR (1) KR102523183B1 (en)
CN (1) CN110234800B (en)
FR (1) FR3062398B1 (en)
SG (1) SG11201906821PA (en)
WO (1) WO2018142061A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110616454B (en) * 2019-03-07 2020-10-09 北京大学 Method for vertical heteroepitaxy monocrystal metal film based on monocrystal two-dimensional material/monocrystal copper

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2857983B1 (en) 2003-07-24 2005-09-02 Soitec Silicon On Insulator PROCESS FOR PRODUCING AN EPITAXIC LAYER
KR20040088448A (en) * 2004-09-21 2004-10-16 정세영 manufacturing method for single crystal wire
CN102646698B (en) * 2007-09-14 2015-09-16 株式会社半导体能源研究所 Semiconductor device and electronic equipment
KR101344493B1 (en) * 2007-12-17 2013-12-24 삼성전자주식회사 Single crystalline graphene sheet and process for preparing the same
JP5297219B2 (en) * 2008-02-29 2013-09-25 信越化学工業株式会社 Manufacturing method of substrate having single crystal thin film
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US8148801B2 (en) * 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8236118B2 (en) 2009-08-07 2012-08-07 Guardian Industries Corp. Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
US9074278B2 (en) 2010-02-26 2015-07-07 National Institute Of Advanced Industrial Science And Technology Carbon film laminate
US8436363B2 (en) * 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US8501531B2 (en) 2011-04-07 2013-08-06 The United States Of America, As Represented By The Secretary Of The Navy Method of forming graphene on a surface
WO2013038623A1 (en) * 2011-09-16 2013-03-21 富士電機株式会社 Method for producing graphene, and graphene
FR2987166B1 (en) 2012-02-16 2017-05-12 Soitec Silicon On Insulator METHOD FOR TRANSFERRING A LAYER
WO2014030040A1 (en) * 2012-08-24 2014-02-27 Soitec Methods of forming semiconductor structures and devices including graphene, and related structures and devices
CN103871684A (en) 2012-12-18 2014-06-18 Hcgt有限公司 Structure applying graphene and manufacturing method for structure
WO2014125688A1 (en) * 2013-02-18 2014-08-21 住友電気工業株式会社 Group iii-nitride composite substrate and method of producing same, layered group iii-nitride composite substrate, as well as group iii-nitride semiconductor device and method of producing same
WO2014189271A1 (en) * 2013-05-21 2014-11-27 한양대학교 산학협력단 Large-surface-area single-crystal monolayer graphene and production method therefor
KR101701237B1 (en) * 2013-05-21 2017-02-03 한양대학교 산학협력단 Lare-size Single-crystal Monolayer Graphene and Manufacturing Method Thereof
CN103354273B (en) 2013-06-17 2016-02-24 华侨大学 A kind of embedded large area flexible sensitization solar cell and preparation method thereof

Also Published As

Publication number Publication date
WO2018142061A1 (en) 2018-08-09
JP2020506150A (en) 2020-02-27
US20230416940A1 (en) 2023-12-28
CN110234800A (en) 2019-09-13
US11913134B2 (en) 2024-02-27
FR3062398B1 (en) 2021-07-30
JP7341059B2 (en) 2023-09-08
US20190390366A1 (en) 2019-12-26
FR3062398A1 (en) 2018-08-03
KR102523183B1 (en) 2023-04-18
KR20190110613A (en) 2019-09-30
CN110234800B (en) 2021-03-30
EP3577257A1 (en) 2019-12-11

Similar Documents

Publication Publication Date Title
WO2015116857A3 (en) Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer
SG10201800863VA (en) Selective deposition with atomic layer etch reset
EP2392547A3 (en) Method of graphene manufacturing
TW201613103A (en) Self aligned replacement fin formation
MY185883A (en) Perovskite material layer processing
WO2015027080A3 (en) Selective deposition of diamond in thermal vias
GB201209465D0 (en) Polycrystalline material, bodies comprising same, tools comprising same and method for making same
WO2007133271A3 (en) Methods for oriented growth of nanowires on patterned substrates
EP3007209A4 (en) Method for manufacturing sic single-crystal substrate for epitaxial sic wafer, and sic single-crystal substrate for epitaxial sic wafer
JP2015079945A5 (en)
JP2013212952A5 (en)
WO2019140445A3 (en) Hydride enhanced growth rates in hydride vapor phase epitaxy
TW201130017A (en) Epitaxial substrate having nano-rugged surface and fabrication thereof
WO2016038542A3 (en) Solid forms of sofosbuvir
RU2018113432A (en) METHOD FOR PRODUCING COMPOSITE SUBSTRATE FROM SIC
GB2541146A (en) Method of manufacturing a germanium-on-insulator substrate
EP3366817A4 (en) Base substrate, method for manufacturing base substrate, and method for manufacturing group 13 nitride crystal
EP4012079A4 (en) Sic substrate, sic epitaxial substrate, sic ingot and production methods thereof
EP4012078A4 (en) Sic seed crystal and method for producing same, sic ingot produced by growing said sic seed crystal and method for producing same, and sic wafer produced from said sic ingot and sic wafer with epitaxial film and methods respectively for producing said sic wafer and said sic wafer with epitaxial film
WO2015160092A3 (en) Memory element
WO2015160093A3 (en) Memory element
SG11201906821PA (en) Process for manufacturing a two-dimensional film of hexagonal crystalline structure
EP3825446A4 (en) Silicon ingot, silicon block, silicon substrate, method for producing silicon ingot, and solar cell
EP2953158A3 (en) Method of fabricating crystalline island on substrate
WO2015050630A3 (en) Methods of producing large grain or single crystal films