CN103871684A - Structure applying graphene and manufacturing method for structure - Google Patents
Structure applying graphene and manufacturing method for structure Download PDFInfo
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- CN103871684A CN103871684A CN201210552932.8A CN201210552932A CN103871684A CN 103871684 A CN103871684 A CN 103871684A CN 201210552932 A CN201210552932 A CN 201210552932A CN 103871684 A CN103871684 A CN 103871684A
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Abstract
The invention discloses a structure applying graphene and a manufacturing method for the structure. The method comprises the following steps: forming a graphene layer on one face of a metal layer; forming a protective layer on the other face, opposite to the metal layer, of the graphene layer to enable the graphene layer to be between the metal layer and the protective layer in position; arranging the protective layer, the graphene layer and the metal layer on one face of a substrate; removing the metal layer from the graphene layer; forming a conducting layer on one face, opposite to the protective layer, of the graphene layer. Therefore, the device applying the graphene not only is capable of protecting the graphene from damage when being transferred but also is capable of bearing pressure from a roller during a roll-to-roll manufacturing process by means of the installation of the protective layer so as to improve the production efficiency.
Description
Technical field
The present invention is about a kind of application of Graphene, particularly in structure and the manufacture method thereof of using mineral carbon alkene.
Background technology
Graphene (Graphene) is to be a kind ofly closely integrated into Two dimensional Crystallization lattice and complete transparent plane layer almost by carbon atom, each layer graphene only absorbs approximately 2.3% luminous energy, in addition, its have than carbon nano-tube (carbon nanotube) and silicon (silicon) also want fast electron mobility, also will be good than carbon nano-tube conductive coefficient and resistance that also will be low than copper (cooper) or silver (silver) (electron mobility of Graphene is proved and exceedes 200,000cm
2/ VS, conductive coefficient is approximately 5,300W/mK, resistance is about 10ohmscm).Therefore, Graphene is used in transparency electrode, contact panel and the solar cell of High-speed Electric crystal, sensor, screen by feat of its outstanding electrical resistance, thermal conductivity, flexing and high-transmittance.
But, although Graphene has many advantages, but it has but limited its practicality greatly no matter be all easy to destroyed characteristic in the situation that of individual layer or several layers, and current technology is still quite immature, and the divert film using conventionally has compared with high resistance and causes inhomogeneities.For instance, for example, when having in processing procedure when graphene film is attached to the transfer step of required substrate (: plastic cement, glass or silicon), most Graphene can be arranged on (for example: copper or nickel) on metal substrate, in the process shifting, Graphene is just easy to destroyed and causes large-area discontinuity.
For example, one piece of " large-area synthesis of high-quality and uniform graphene films on copper foils " (Science by name, v.324, the 1312nd page) paper have professor a kind of Graphene transfer method, the method has the step of comprising: form a graphene layer on a copper foil layer; Be coated with a polymethyl methacrylate (PMMA) layer; Clamp this polymethyl methacrylate layers to dissolve this copper foil layer; This graphene layer and this polymethyl methacrylate layers are taken to a required substrate, then remove this polymethyl methacrylate layers.But the method can only reach low-down shipment ability, cause too high production cost more to limit the productibility of Graphene.
Therefore, whether there are a kind of structure or method can improve Graphene easy destroyed shortcoming in the time shifting, provide industry can control on a large scale output and uniformity, and then obtain higher productivity.
Summary of the invention
The present invention discloses a kind of application of Graphene, particularly in structure and the manufacture method thereof of using mineral carbon alkene.
According to a category of the present invention, a kind of manufacture method of using mineral carbon alkene, it provides a manufacture method to protect Graphene to avoid it in the time shifting (transferring) application, to be destroyed.
According to another category of the present invention, a kind of structure of using mineral carbon alkene, it provides the device that an apparatus structure makes using mineral carbon alkene can be easier by mass production.
According to one embodiment of the invention, a kind of manufacture method of using mineral carbon alkene, it comprises step: form a graphene layer in the one side of a metal level; Form a protective layer in this graphene layer the another side with respect to this metal level, make the position of this graphene layer between this metal level and this protective layer; This protective layer, this graphene layer and this metal level are arranged to the one side of a substrate; From rare this metal level that removes of this graphite; And form a conductive layer in this graphene layer the one side with respect to this protective layer.
According to another embodiment of the present invention, a kind of structure of using mineral carbon alkene, from top to bottom stacks and forms with a conductive layer, a graphene layer, a protective layer and a substrate.This protective layer is formed at the upper of this substrate.This graphene layer is formed at the upper of this protective layer, so that this protective layer is protected this graphene layer.This conductive layer is formed at the upper of this graphene layer.
Therefore; compare traditional mode of production, the present invention, by the frame mode that has additional protective layer, reaches protection Graphene and avoid destroyed in the time shifting application; more can effectively promote the production efficiency of Graphene device, the device of using mineral carbon alkene can be easy to by mass production.
Accompanying drawing explanation
Fig. 1 is the block diagram of the manufacture method of using mineral carbon alkene of the present invention.
Fig. 2 A is that the device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S10 in block diagram shown in Fig. 1.
Fig. 2 B is that the device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S11 in block diagram shown in Fig. 1.
Fig. 2 C is that the device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S12 in block diagram shown in Fig. 1.
Fig. 2 D is that the device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S13 in block diagram shown in Fig. 1.
Fig. 2 E is that the device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S14 in block diagram shown in Fig. 1.
Fig. 3 is the apparatus structure schematic diagram of using mineral carbon alkene of the present invention.
[main element symbol description]
10 black alkene layers
12 metal levels
14 protective layers
16 substrates
18 conductive layers
Embodiment
Shown in Fig. 1 and Fig. 2, Fig. 1 is the block diagram of the manufacture method of using mineral carbon alkene of the present invention.Fig. 2 A-2E is that the constructional device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of block diagram shown in Fig. 1.The manufacture method of using mineral carbon alkene of the present invention comprises step:
S10 forms a graphene layer 10 in the one side of a metal level 12;
S11 form a protective layer 14 in this graphene layer 10 another side with respect to this metal level 12, make the position of this graphene layer 10 between this metal level 12 and this protective layer 14;
S12 is arranged at this protective layer 14, this graphene layer 10 and 12 layers, this metal the one side of a substrate 16;
S13 removes this metal level 12 from this graphene layer 10; And
S14 form a conductive layer 18 in this graphene layer 16 one side with respect to this protective layer 14.
Wherein, please coordinate the 2A with reference to figure, Fig. 2 A is that the constructional device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S10 in block diagram shown in Fig. 1.As shown in the figure, this Graphene (Graphene) layer 10 can be the one side that for example chemical vapour deposition technique (CVD) is formed at this metal level 12, and this graphene layer 10 can be individual layer or multilayer, this metal level 12 can be for example copper (Cu) matter layer or nickel (Ni) matter layer.In addition, according to inventor's experiment, the thickness of this metal level 12 between but be not limited to 1 to 50 micron (micrometers, μ m) between, and the thickness of this graphene layer 10 between but be not limited between 0.2 to 20 nanometer (nanometers, nm).
Please coordinate the 2B with reference to figure, Fig. 2 B is that the constructional device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S11 in block diagram shown in Fig. 1.As shown in the figure; this protective layer 14 is formed at the one side of this graphene layer 10 in the mode of for example spin coating (spin-coat) or modeling cutting (slit-casting); this protective layer 14 is in order to absorb the pressure that may cause this graphene layer 10 to damage; it is a pressure absorbing layer; wherein; the material of this protective layer 14 can be epoxy based polymer (epoxy-based polymer); further say epoxy radicals negative photoresist (epoxy-based negative photoresist), for example: photoresist (SU-8).In addition, according to inventor's experiment, the thickness of this protective layer 14 be between but be not limited between 0.1 to 50 μ m.
Please coordinate the 2C with reference to figure, Fig. 2 C is that the constructional device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S12 in block diagram shown in Fig. 1.As shown in the figure; the position of this protective layer 14 turn to orlop by the superiors shown in above-mentioned Fig. 2 B; and come and these substrate 16 combinations with respect to the one side of this graphene layer 10 with this protective layer 14, that is to say, the position of this protective layer 14 is between this graphene layer 10 and this substrate 16.In addition, according to inventor's experiment, the thickness of this substrate 16 be between but be not limited between 10 to 500 μ m.
It should be noted that, please coordinate with reference to shown in figure 2B and Fig. 2 C, be formed at this graphene layer 10 on this metal level 12 before can further being utilized, must be first through shifting the program of (transferring), will be this protective layer 14 and work as, when this graphene layer 10 is placed in the one side of this substrate 16 with these metal level 12 transfer apparatus, need first by this protective layer 14, this graphene layer 10 overturns with the structure that this metal level 12 forms, make this protective layer 14 turn to the bottom from the superiors, this metal level 12 turn to the superiors from the bottom, and this protective layer 14 is arranged to the one side of this substrate 16, wherein, this protective layer 14 can be exposed to ultraviolet light (UV light) or the mode of hot curing (heat) fixes.
Further, because this graphene layer 10 is just completely among the protection of this metal level 12 and this protective layer 14 in the time of branching program, that is to say, the protective layer 14 being arranged between this graphene layer 10 and this substrate 16 has formed a resilient coating, be used for absorbing the pressure that may damage this graphene layer 10 in branching program, therefore, by the setting of protective layer 14, make the constructional device of this using mineral carbon alkene in scroll bar type processing procedure (roll-to-roll type process), bear the pressure from roller (roller), to promote the efficiency of producing.
Then please coordinate with reference to figure 2D, Fig. 2 D is that the constructional device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S13 in block diagram shown in Fig. 1.As shown in the figure, the mode that the mode that removes of this metal level 12 can wet etching (wet-etching) removes.In addition, after removing this metal level 12, can be by adding a dopant (dopant) to reduce the impedance (resistance) of this graphene layer 10, therefore, the structure making process of using mineral carbon alkene of the present invention can separately comprise step:
Chemical doping (chemical doping) dopant is among this graphene layer, to reduce the impedance of this graphene layer.
Then please coordinate with reference to figure 2E, Fig. 2 E is that the constructional device of using mineral carbon alkene of the present invention is corresponding to the schematic diagram of step S14 in block diagram shown in Fig. 1.As shown in the figure, after this metal level 12 is removed, this conductive layer (conducting layer) 18 can be formed on the one side of this graphene layer 10, wherein, this conductive layer 18 is the impedance uniformitys (uniformity of the resistivity) for increasing any discontinuous (discontinues) Graphene connecting in bridge joint mode (bridging) in region, in addition, this conductive layer 18 can be one with spin coating (s pin-coat) or modeling cutting (slit-casting) the superthin layer body (ultra-thin layer) on this graphene layer 10, and material can be an electroconductive resin (PEDOT:PSS), silver nano wire (silver nanowires) or carbon nano-tube (carbon nanotubes).
In sum, please refer to Fig. 2 E and Fig. 3, Fig. 3 is the apparatus structure schematic diagram of using mineral carbon alkene of the present invention.As shown in the figure, the device of one using mineral carbon alkene provides a kind of high evenness (high uniformity), high conductance (conductivity), the structure of high flexing (flexibility) and high-transmittance (transparency), it is with a conductive layer 18, one graphene layer 10, one protective layer 14 and a substrate 16 from top to bottom stack and form, and the device of this using mineral carbon alkene can be used to manufacture a solar cell (solar cell), one light-emittingdiode (light emitting diode), one battery (battery), one super capacitor (super capacitor), one antistatic aids (anti-static device), one electrochromic device (electro-chromic device), one electric moistening equipment (electro-wetting device) or a contact panel (touch panel).
Therefore, compare traditional mode of production, the present invention can protect Graphene to avoid destroyed, provides industry can control on a large scale output and the uniformity, effectively promotes the production efficiency of the device of using mineral carbon alkene.
Only as described above, be only preferred embodiment of the present invention, when can not be in order to limit the enforceable scope of the present invention, all know this case field have common skill personage variation and the modification that obviously can do, all should be considered as not departing from flesh and blood of the present invention.
Claims (10)
1. a manufacture method for using mineral carbon alkene, is characterized in that, comprises step:
Form a graphene layer in the one side of a metal level;
Form a protective layer in this graphene layer the another side with respect to this metal level, make the position of this graphene layer between this metal level and this protective layer;
This protective layer, this graphene layer and this metal level are arranged to the one side of a substrate;
Remove this metal level from this graphene layer; And
Form a conductive layer in this graphene layer the one side with respect to this protective layer.
2. the manufacture method of using mineral carbon alkene as claimed in claim 1, is characterized in that, separately comprises step:
Chemical doping one dopant is among this graphene layer, to reduce the impedance of this graphene layer.
3. the manufacture method of using mineral carbon alkene as claimed in claim 1, is characterized in that, this graphene layer is the one side that is formed at this metal level with chemical vapour deposition technique.
4. the manufacture method of using mineral carbon alkene as claimed in claim 1, is characterized in that, this protective layer is the one side that is formed at this graphene layer in the mode of spin coating or modeling cutting.
5. the manufacture method of using mineral carbon alkene as claimed in claim 1, is characterized in that, this protective layer is a pressure absorbing layer.
6. the manufacture method of using mineral carbon alkene as claimed in claim 1; it is characterized in that; this protective layer, this graphene layer and this metal level are arranged to this step of the one side of a substrate; it is the structure upset that this protective layer, this graphene layer and this metal level are formed; make this protective layer turn to the bottom from the superiors; this metal level turn to the superiors from the bottom, and this protective layer is arranged to the one side of this substrate.
7. the manufacture method of using mineral carbon alkene as claimed in claim 1; it is characterized in that; the thickness of this metal level is between 1 to 30 micron; the thickness of this graphene layer is between 0.2 to 20 nanometer; the thickness of this protective layer is between 0.1 to 50 micron, and the thickness of this substrate is between 10 to 500 microns.
8. the manufacture method of using mineral carbon alkene as claimed in claim 1, is characterized in that, this metal level is copper layer or a nickel matter layer.
9. a structure for using mineral carbon alkene, is characterized in that, comprising:
One substrate;
One protective layer, is formed at the one side of this substrate;
One graphene layer, is formed at the another side of this protective layer with respect to this substrate, so that this protective layer is protected this graphene layer; And
One conductive layer, is formed at the another side of this graphene layer with respect to this protective layer, in order to increase the uniformity.
10. the structure of a kind of using mineral carbon alkene as claimed in claim 9, wherein, the structure of this using mineral carbon alkene provides for manufacturing a solar cell, a light-emittingdiode, a battery, a super capacitor, an antistatic aids, an electrochromic device, an electrowetting device or a contact panel.
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Cited By (5)
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| WO2017206440A1 (en) * | 2016-05-30 | 2017-12-07 | Boe Technology Group Co., Ltd. | Display panel, display apparatus having the same, and fabricating method thereof |
| CN107850772A (en) * | 2015-06-05 | 2018-03-27 | 曼彻斯特大学 | Electrowetting device |
| CN108648853A (en) * | 2018-03-30 | 2018-10-12 | 重庆墨希科技有限公司 | The composite conductive structure and preparation method thereof of graphene attachment enhancing |
| CN110234800A (en) * | 2017-02-02 | 2019-09-13 | 索泰克公司 | The method for manufacturing the two-dimensional films of hexagonal crystallographic texture |
| CN110564376A (en) * | 2019-08-27 | 2019-12-13 | 华进半导体封装先导技术研发中心有限公司 | Composite material for thermal management and preparation method thereof |
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| CN108648853A (en) * | 2018-03-30 | 2018-10-12 | 重庆墨希科技有限公司 | The composite conductive structure and preparation method thereof of graphene attachment enhancing |
| CN108648853B (en) * | 2018-03-30 | 2020-01-31 | 重庆墨希科技有限公司 | Graphene adhesion enhanced composite conductive structure and preparation method thereof |
| CN110564376A (en) * | 2019-08-27 | 2019-12-13 | 华进半导体封装先导技术研发中心有限公司 | Composite material for thermal management and preparation method thereof |
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Application publication date: 20140618 |