JP2012515079A5 - - Google Patents

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Publication number
JP2012515079A5
JP2012515079A5 JP2011545791A JP2011545791A JP2012515079A5 JP 2012515079 A5 JP2012515079 A5 JP 2012515079A5 JP 2011545791 A JP2011545791 A JP 2011545791A JP 2011545791 A JP2011545791 A JP 2011545791A JP 2012515079 A5 JP2012515079 A5 JP 2012515079A5
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JP
Japan
Prior art keywords
growth surface
seed
growth
single crystal
crystal diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011545791A
Other languages
English (en)
Japanese (ja)
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JP2012515079A (ja
JP5759903B2 (ja
Filing date
Publication date
Priority claimed from GB0900771A external-priority patent/GB0900771D0/en
Application filed filed Critical
Publication of JP2012515079A publication Critical patent/JP2012515079A/ja
Publication of JP2012515079A5 publication Critical patent/JP2012515079A5/ja
Application granted granted Critical
Publication of JP5759903B2 publication Critical patent/JP5759903B2/ja
Active legal-status Critical Current
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JP2011545791A 2009-01-16 2010-01-15 単結晶ダイヤモンドを製造するための高圧高温（ｈｐｈｔ）方法 Active JP5759903B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0900771A GB0900771D0 (en) 2009-01-16 2009-01-16 Diamond
GB0900771.7 2009-01-16
PCT/GB2010/000059 WO2010082029A1 (en) 2009-01-16 2010-01-15 High pressure high temperature (hpht) method for the production of single crystal diamonds

Publications (3)

Publication Number Publication Date
JP2012515079A JP2012515079A (ja) 2012-07-05
JP2012515079A5 true JP2012515079A5 (enExample) 2013-03-07
JP5759903B2 JP5759903B2 (ja) 2015-08-05

Family

ID=40445953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011545791A Active JP5759903B2 (ja) 2009-01-16 2010-01-15 単結晶ダイヤモンドを製造するための高圧高温（ｈｐｈｔ）方法

Country Status (6)

Country Link
US (1) US9039832B2 (enExample)
EP (1) EP2379214B1 (enExample)
JP (1) JP5759903B2 (enExample)
KR (1) KR20110104562A (enExample)
GB (1) GB0900771D0 (enExample)
WO (1) WO2010082029A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0704516D0 (en) 2007-03-08 2007-04-18 Element Six Ltd Diamond
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
GB201204533D0 (en) * 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material
TWI605113B (zh) * 2012-07-05 2017-11-11 江陰貝卡爾特合金材料有限公司 具有立方八面體鑽石粒子之固定磨料鋸線
KR101811761B1 (ko) * 2014-10-11 2017-12-22 허난 페이머스 다이아몬드 인더스트리얼 씨오. 엘티디 거친 표면의 금강석의 합성방법
JP6217949B2 (ja) * 2016-11-10 2017-10-25 住友電気工業株式会社 単結晶ダイヤモンド
CN111020698A (zh) * 2019-12-16 2020-04-17 吉林大学 一种异形{111}籽晶合成金刚石单晶的方法
CN112892411B (zh) * 2021-01-25 2022-05-31 四川大学 一种高温高压下生长大颗粒金刚石的方法
EP4317544A4 (en) * 2021-03-31 2024-08-28 Sumitomo Electric Industries, Ltd. MONOCRYSTALLINE DIAMOND AND DIAMOND COMPOSITE COMPRISING IT
US20240175167A1 (en) * 2021-03-31 2024-05-30 Sumitomo Electric Industries, Ltd. Single-crystal diamond and method of manufacturing the same
KR20240098386A (ko) * 2022-12-21 2024-06-28 일진다이아몬드(주) 초정밀 연삭용 다이아몬드 지립 및 그 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034066A (en) 1973-11-02 1977-07-05 General Electric Company Method and high pressure reaction vessel for quality control of diamond growth on diamond seed
US4617181A (en) 1983-07-01 1986-10-14 Sumitomo Electric Industries, Ltd. Synthetic diamond heat sink
JPH0779958B2 (ja) 1987-05-08 1995-08-30 住友電気工業株式会社 大型ダイヤモンドの合成方法
JP2932559B2 (ja) 1990-01-19 1999-08-09 住友電気工業株式会社 大型ダイヤモンド単結晶の合成方法
AU4245693A (en) 1992-05-04 1993-11-29 Case Western Reserve University Growth of diamond crystals
US5474021A (en) 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
DE69629651T2 (de) * 1995-12-21 2004-02-26 Element Six (Pty) Ltd. Diamantsynthese
JP4032482B2 (ja) 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
EP1671726B1 (en) 2003-10-10 2013-02-13 Sumitomo Electric Industries, Ltd. Diamond tool
CN101072630B (zh) 2004-12-09 2011-06-08 六号元素技术（控股）公司 改善金刚石晶体的晶体完整性的方法
JP5002982B2 (ja) 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JP4613314B2 (ja) 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
JP5323492B2 (ja) 2005-12-09 2013-10-23 エレメント シックス テクノロジーズ （プロプライアタリー） リミテッド 高結晶品質の合成ダイヤモンド
GB0704516D0 (en) 2007-03-08 2007-04-18 Element Six Ltd Diamond

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