JP5759903B2 - 単結晶ダイヤモンドを製造するための高圧高温（ｈｐｈｔ）方法 - Google Patents

単結晶ダイヤモンドを製造するための高圧高温（ｈｐｈｔ）方法 Download PDF

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JP5759903B2
JP5759903B2 JP2011545791A JP2011545791A JP5759903B2 JP 5759903 B2 JP5759903 B2 JP 5759903B2 JP 2011545791 A JP2011545791 A JP 2011545791A JP 2011545791 A JP2011545791 A JP 2011545791A JP 5759903 B2 JP5759903 B2 JP 5759903B2
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seed
single crystal
growth
crystal diamond
growth surface
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JP2012515079A (ja
JP2012515079A5 (enExample
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レイモンド アンソニー スピッツ
レイモンド アンソニー スピッツ
カールトン ナイジェル ドッジ
カールトン ナイジェル ドッジ
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エレメント シックス リミテッド
エレメント シックス リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/061—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2011545791A 2009-01-16 2010-01-15 単結晶ダイヤモンドを製造するための高圧高温（ｈｐｈｔ）方法 Active JP5759903B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0900771.7 2009-01-16
GB0900771A GB0900771D0 (en) 2009-01-16 2009-01-16 Diamond
PCT/GB2010/000059 WO2010082029A1 (en) 2009-01-16 2010-01-15 High pressure high temperature (hpht) method for the production of single crystal diamonds

Publications (3)

Publication Number Publication Date
JP2012515079A JP2012515079A (ja) 2012-07-05
JP2012515079A5 JP2012515079A5 (enExample) 2013-03-07
JP5759903B2 true JP5759903B2 (ja) 2015-08-05

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ID=40445953

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JP2011545791A Active JP5759903B2 (ja) 2009-01-16 2010-01-15 単結晶ダイヤモンドを製造するための高圧高温（ｈｐｈｔ）方法

Country Status (6)

Country Link
US (1) US9039832B2 (enExample)
EP (1) EP2379214B1 (enExample)
JP (1) JP5759903B2 (enExample)
KR (1) KR20110104562A (enExample)
GB (1) GB0900771D0 (enExample)
WO (1) WO2010082029A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0704516D0 (en) 2007-03-08 2007-04-18 Element Six Ltd Diamond
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
GB201204533D0 (en) * 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material
TWI605113B (zh) * 2012-07-05 2017-11-11 江陰貝卡爾特合金材料有限公司 具有立方八面體鑽石粒子之固定磨料鋸線
KR101811761B1 (ko) * 2014-10-11 2017-12-22 허난 페이머스 다이아몬드 인더스트리얼 씨오. 엘티디 거친 표면의 금강석의 합성방법
JP6217949B2 (ja) * 2016-11-10 2017-10-25 住友電気工業株式会社 単結晶ダイヤモンド
CN111020698A (zh) * 2019-12-16 2020-04-17 吉林大学 一种异形{111}籽晶合成金刚石单晶的方法
CN112892411B (zh) * 2021-01-25 2022-05-31 四川大学 一种高温高压下生长大颗粒金刚石的方法
WO2022210934A1 (ja) * 2021-03-31 2022-10-06 住友電気工業株式会社 単結晶ダイヤモンド及びその製造方法
WO2022210723A1 (ja) * 2021-03-31 2022-10-06 住友電気工業株式会社 単結晶ダイヤモンド及びこれを備えるダイヤモンド複合体
KR20240098386A (ko) * 2022-12-21 2024-06-28 일진다이아몬드(주) 초정밀 연삭용 다이아몬드 지립 및 그 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034066A (en) 1973-11-02 1977-07-05 General Electric Company Method and high pressure reaction vessel for quality control of diamond growth on diamond seed
US4617181A (en) 1983-07-01 1986-10-14 Sumitomo Electric Industries, Ltd. Synthetic diamond heat sink
JPH0779958B2 (ja) 1987-05-08 1995-08-30 住友電気工業株式会社 大型ダイヤモンドの合成方法
JP2932559B2 (ja) * 1990-01-19 1999-08-09 住友電気工業株式会社 大型ダイヤモンド単結晶の合成方法
AU4245693A (en) 1992-05-04 1993-11-29 Case Western Reserve University Growth of diamond crystals
US5474021A (en) 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
ATE248020T1 (de) * 1995-12-21 2003-09-15 Element Six Pty Ltd Diamantsynthese
JP4032482B2 (ja) 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
EP1671726B1 (en) 2003-10-10 2013-02-13 Sumitomo Electric Industries, Ltd. Diamond tool
JP5362993B2 (ja) 2004-12-09 2013-12-11 エレメント シックス テクノロジーズ （プロプライアタリー）リミテッド ダイヤモンド結晶の結晶完全性を改良する方法
JP5002982B2 (ja) 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JP4613314B2 (ja) 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
JP5323492B2 (ja) 2005-12-09 2013-10-23 エレメント シックス テクノロジーズ （プロプライアタリー） リミテッド 高結晶品質の合成ダイヤモンド
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond

Also Published As

Publication number Publication date
GB0900771D0 (en) 2009-03-04
JP2012515079A (ja) 2012-07-05
CN103097011A (zh) 2013-05-08
US9039832B2 (en) 2015-05-26
US20110271900A1 (en) 2011-11-10
CN103097011B (zh) 2015-11-25
WO2010082029A1 (en) 2010-07-22
EP2379214B1 (en) 2017-11-15
KR20110104562A (ko) 2011-09-22
EP2379214A1 (en) 2011-10-26

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