JP2000022212A5 - - Google Patents

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Publication number
JP2000022212A5
JP2000022212A5 JP1998183446A JP18344698A JP2000022212A5 JP 2000022212 A5 JP2000022212 A5 JP 2000022212A5 JP 1998183446 A JP1998183446 A JP 1998183446A JP 18344698 A JP18344698 A JP 18344698A JP 2000022212 A5 JP2000022212 A5 JP 2000022212A5
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JP
Japan
Prior art keywords
gan
substrate
mask
crystal
striped
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JP1998183446A
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English (en)
Japanese (ja)
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JP2000022212A (ja
JP3788041B2 (ja
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Priority claimed from JP18344698A external-priority patent/JP3788041B2/ja
Priority to JP18344698A priority Critical patent/JP3788041B2/ja
Priority to TW088109629A priority patent/TW417315B/zh
Priority to US09/333,879 priority patent/US6413627B1/en
Priority to EP99111739A priority patent/EP0966047B1/en
Priority to DE69943012T priority patent/DE69943012D1/de
Priority to KR1019990023075A priority patent/KR100348175B1/ko
Priority to CNB991086449A priority patent/CN1196176C/zh
Publication of JP2000022212A publication Critical patent/JP2000022212A/ja
Priority to HK00103240.2A priority patent/HK1024099B/xx
Publication of JP2000022212A5 publication Critical patent/JP2000022212A5/ja
Publication of JP3788041B2 publication Critical patent/JP3788041B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP18344698A 1998-06-18 1998-06-30 ＧａＮ単結晶基板の製造方法 Expired - Lifetime JP3788041B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP18344698A JP3788041B2 (ja) 1998-06-30 1998-06-30 ＧａＮ単結晶基板の製造方法
TW088109629A TW417315B (en) 1998-06-18 1999-06-09 GaN single crystal substrate and its manufacture method of the same
US09/333,879 US6413627B1 (en) 1998-06-18 1999-06-15 GaN single crystal substrate and method of producing same
EP99111739A EP0966047B1 (en) 1998-06-18 1999-06-17 GaN single crystal substrate and method of producing same
DE69943012T DE69943012D1 (de) 1998-06-18 1999-06-17 GaN-Einkristallinessubstrat und Herstellungsverfahren
CNB991086449A CN1196176C (zh) 1998-06-18 1999-06-18 GaN单晶衬底
KR1019990023075A KR100348175B1 (ko) 1998-06-18 1999-06-18 ＧａＮ단결정기판 및 그 제조방법
HK00103240.2A HK1024099B (en) 1998-06-18 2000-05-31 Gan single crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18344698A JP3788041B2 (ja) 1998-06-30 1998-06-30 ＧａＮ単結晶基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006029818A Division JP4288515B2 (ja) 2006-02-07 2006-02-07 ＧａＮ単結晶基板、ＧａＮ単結晶基板の製造方法、ＧａＮ単結晶基板の上に作製した発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000022212A JP2000022212A (ja) 2000-01-21
JP2000022212A5 true JP2000022212A5 (enExample) 2006-01-26
JP3788041B2 JP3788041B2 (ja) 2006-06-21

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JP18344698A Expired - Lifetime JP3788041B2 (ja) 1998-06-18 1998-06-30 ＧａＮ単結晶基板の製造方法

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JP (1) JP3788041B2 (enExample)

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US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
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US9279193B2 (en) 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
US8357945B2 (en) 2002-12-27 2013-01-22 Momentive Performance Materials Inc. Gallium nitride crystal and method of making same
US7859008B2 (en) 2002-12-27 2010-12-28 Momentive Performance Materials Inc. Crystalline composition, wafer, device, and associated method
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US8089097B2 (en) 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
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KR100550491B1 (ko) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
JP4396816B2 (ja) 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
US7009215B2 (en) 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
JP4380294B2 (ja) 2003-10-29 2009-12-09 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
JP2005340747A (ja) * 2003-11-04 2005-12-08 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法、ｉｉｉ−ｖ族窒化物系半導体デバイス、ｉｉｉ−ｖ族窒化物系半導体基板のロット
US7276779B2 (en) 2003-11-04 2007-10-02 Hitachi Cable, Ltd. III-V group nitride system semiconductor substrate
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JP2006306722A (ja) * 2004-03-17 2006-11-09 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板の製造方法及びＧａＮ単結晶基板
JP2006108435A (ja) * 2004-10-06 2006-04-20 Sumitomo Electric Ind Ltd 窒化物半導体ウエハ
JP4525309B2 (ja) * 2004-11-19 2010-08-18 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の評価方法
JP4525353B2 (ja) 2005-01-07 2010-08-18 住友電気工業株式会社 Ｉｉｉ族窒化物基板の製造方法
KR100712753B1 (ko) * 2005-03-09 2007-04-30 주식회사 실트론 화합물 반도체 장치 및 그 제조방법
JP4780993B2 (ja) 2005-03-31 2011-09-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2006290677A (ja) * 2005-04-11 2006-10-26 Hitachi Cable Ltd 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法
JP2006290697A (ja) * 2005-04-14 2006-10-26 Hitachi Cable Ltd 窒化物半導体基板及びその製造方法
JP2007030155A (ja) * 2005-06-24 2007-02-08 Sumitomo Electric Ind Ltd 窒化物半導体結晶の加工方法
JP5374011B2 (ja) * 2005-11-28 2013-12-25 住友電気工業株式会社 窒化物半導体装置
JP2007161535A (ja) * 2005-12-14 2007-06-28 Sumitomo Electric Ind Ltd 半導体結晶基板の製造方法
JP2007161534A (ja) * 2005-12-14 2007-06-28 Sumitomo Electric Ind Ltd 窒化物半導体結晶基板の製造方法
JP4386031B2 (ja) * 2005-12-26 2009-12-16 住友電気工業株式会社 半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法
KR100727820B1 (ko) * 2006-01-25 2007-06-13 삼성코닝 주식회사 질화갈륨 단결정 기판의 표면가공 방법
JP4862442B2 (ja) 2006-03-15 2012-01-25 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法及びｉｉｉ−ｖ族窒化物系デバイスの製造方法
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
US7928447B2 (en) 2006-07-17 2011-04-19 Sumitomo Electric Industries, Ltd. GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device
US7755103B2 (en) 2006-08-03 2010-07-13 Sumitomo Electric Industries, Ltd. Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
JP2008074671A (ja) * 2006-09-21 2008-04-03 Tohoku Univ 自立窒化物基板の製造方法
JP4656438B2 (ja) * 2006-11-13 2011-03-23 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP5125098B2 (ja) 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
JP2008162855A (ja) 2006-12-28 2008-07-17 Hitachi Cable Ltd 窒化物半導体基板の製造方法及び窒化物半導体基板
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JP5181885B2 (ja) * 2007-10-05 2013-04-10 住友電気工業株式会社 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
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JP4888377B2 (ja) 2007-12-22 2012-02-29 日立電線株式会社 窒化物半導体自立基板
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WO2011087061A1 (ja) 2010-01-15 2011-07-21 三菱化学株式会社 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法
JP5304712B2 (ja) * 2010-04-07 2013-10-02 新日鐵住金株式会社 炭化珪素単結晶ウェハ
JP5304715B2 (ja) * 2010-04-09 2013-10-02 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板
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JP5938871B2 (ja) * 2010-11-15 2016-06-22 住友電気工業株式会社 ＧａＮ系膜の製造方法
US8697564B2 (en) 2010-11-16 2014-04-15 Sumitomo Electric Industries, Ltd. Method of manufacturing GaN-based film
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same
US9184228B2 (en) 2011-03-07 2015-11-10 Sumitomo Electric Industries, Ltd. Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
JP5641029B2 (ja) * 2012-09-24 2014-12-17 住友電気工業株式会社 Ｉｉｉ族窒化物系電子デバイス
JP2015157760A (ja) * 2015-05-28 2015-09-03 株式会社リコー １３族窒化物結晶および１３族窒化物結晶基板
JP7037329B2 (ja) 2017-10-27 2022-03-16 株式会社サイオクス 窒化物半導体基板、半導体積層物、基板選別プログラム、半導体装置選別プログラム、および半導体装置の製造方法
DE112021006806T5 (de) 2021-03-25 2023-11-16 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III

Family Cites Families (4)

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JPH09115862A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd 研磨工具と、それを用いた研磨方法および研磨装置
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
JP3721674B2 (ja) * 1996-12-05 2005-11-30 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体基板の製造方法
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