JP2006524138A5 - - Google Patents

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Publication number
JP2006524138A5
JP2006524138A5 JP2004564805A JP2004564805A JP2006524138A5 JP 2006524138 A5 JP2006524138 A5 JP 2006524138A5 JP 2004564805 A JP2004564805 A JP 2004564805A JP 2004564805 A JP2004564805 A JP 2004564805A JP 2006524138 A5 JP2006524138 A5 JP 2006524138A5
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JP
Japan
Prior art keywords
layer
single crystal
semiconductor layer
opening
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004564805A
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English (en)
Japanese (ja)
Other versions
JP2006524138A (ja
JP4431502B2 (ja
Filing date
Publication date
Priority claimed from US10/328,922 external-priority patent/US7122395B2/en
Application filed filed Critical
Publication of JP2006524138A publication Critical patent/JP2006524138A/ja
Publication of JP2006524138A5 publication Critical patent/JP2006524138A5/ja
Application granted granted Critical
Publication of JP4431502B2 publication Critical patent/JP4431502B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004564805A 2002-12-23 2003-10-23 エピタキシによって半導体デバイスを形成する方法 Expired - Fee Related JP4431502B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/328,922 US7122395B2 (en) 2002-12-23 2002-12-23 Method of forming semiconductor devices through epitaxy
PCT/US2003/033630 WO2004060792A2 (en) 2002-12-23 2003-10-23 Method of forming semiconductor devices through epitaxy

Publications (3)

Publication Number Publication Date
JP2006524138A JP2006524138A (ja) 2006-10-26
JP2006524138A5 true JP2006524138A5 (enExample) 2006-12-07
JP4431502B2 JP4431502B2 (ja) 2010-03-17

Family

ID=32594621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004564805A Expired - Fee Related JP4431502B2 (ja) 2002-12-23 2003-10-23 エピタキシによって半導体デバイスを形成する方法

Country Status (7)

Country Link
US (1) US7122395B2 (enExample)
EP (1) EP1578685A2 (enExample)
JP (1) JP4431502B2 (enExample)
KR (1) KR101031990B1 (enExample)
CN (1) CN100440420C (enExample)
AU (1) AU2003286625A1 (enExample)
WO (1) WO2004060792A2 (enExample)

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US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6946371B2 (en) 2002-06-10 2005-09-20 Amberwave Systems Corporation Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
CN100437970C (zh) 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
US6952041B2 (en) * 2003-07-25 2005-10-04 Robert Bosch Gmbh Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
KR100605368B1 (ko) 2004-10-20 2006-07-28 삼성전자주식회사 Ｓｏｉ기판, 그 제조방법, 그리고, 그 ｓｏｉ기판을이용한 부유 구조체 제조 방법
US20060278942A1 (en) * 2005-06-14 2006-12-14 Innovative Micro Technology Antistiction MEMS substrate and method of manufacture
KR20080031846A (ko) * 2005-06-27 2008-04-11 도오레 화인케미칼 가부시키가이샤 경화형 조성물
US20070170528A1 (en) 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
US7468327B2 (en) * 2006-06-13 2008-12-23 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating a micromechanical structure
US7485524B2 (en) * 2006-06-21 2009-02-03 International Business Machines Corporation MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the same
DE102006049886B4 (de) * 2006-10-23 2014-10-16 Robert Bosch Gmbh Mikromechanisches Bauelement mit einer schwingfähigen mikromechanischen Struktur, Sensorbauelement und Verfahren zur Herstellung eines Bauelements
US7919006B2 (en) * 2007-10-31 2011-04-05 Freescale Semiconductor, Inc. Method of anti-stiction dimple formation under MEMS
US7579202B2 (en) * 2007-12-21 2009-08-25 Tekcore Co., Ltd. Method for fabricating light emitting diode element
ITTO20090616A1 (it) * 2009-08-05 2011-02-06 St Microelectronics Srl Procedimento di fabbricazione di dispositivi mems dotati di cavita' sepolte e dispositivo mems cosi' ottenuto
FR2954505B1 (fr) * 2009-12-22 2012-08-03 Commissariat Energie Atomique Structure micromecanique comportant une partie mobile presentant des butees pour des deplacements hors plan de la structure et son procede de realisation
US9023729B2 (en) * 2011-12-23 2015-05-05 Athenaeum, Llc Epitaxy level packaging
CN103681233B (zh) * 2012-09-05 2016-06-15 无锡华润上华半导体有限公司 一种多沟槽结构的制作方法
US10132630B2 (en) 2013-01-25 2018-11-20 MCube Inc. Multi-axis integrated MEMS inertial sensing device on single packaged chip
US10036635B2 (en) 2013-01-25 2018-07-31 MCube Inc. Multi-axis MEMS rate sensor device
US9249012B2 (en) * 2013-01-25 2016-02-02 Mcube, Inc. Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures
US10046964B2 (en) 2013-03-07 2018-08-14 MCube Inc. MEMS structure with improved shielding and method
US9090452B2 (en) * 2013-12-06 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanism for forming MEMS device
US10522388B1 (en) 2018-08-24 2019-12-31 Tower Semiconductor Ltd. Method of forming high-voltage silicon-on-insulator device with diode connection to handle layer

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Publication number Priority date Publication date Assignee Title
JPH0478123A (ja) * 1990-07-20 1992-03-12 Fujitsu Ltd 半導体装置の製造方法
DE4122435A1 (de) * 1991-07-06 1993-01-07 Bosch Gmbh Robert Verfahren zur herstellung von beschleunigungssensoren und beschleunigungssensor
US5258097A (en) * 1992-11-12 1993-11-02 Ford Motor Company Dry-release method for sacrificial layer microstructure fabrication
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
DE4315012B4 (de) * 1993-05-06 2007-01-11 Robert Bosch Gmbh Verfahren zur Herstellung von Sensoren und Sensor
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
US5510156A (en) * 1994-08-23 1996-04-23 Analog Devices, Inc. Micromechanical structure with textured surface and method for making same
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FR2732467B1 (fr) * 1995-02-10 1999-09-17 Bosch Gmbh Robert Capteur d'acceleration et procede de fabrication d'un tel capteur
FR2736934B1 (fr) * 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
DE19526691A1 (de) * 1995-07-21 1997-01-23 Bosch Gmbh Robert Verfahren zur Herstellung von Beschleunigungssensoren
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JP3430771B2 (ja) * 1996-02-05 2003-07-28 株式会社デンソー 半導体力学量センサの製造方法
US6228691B1 (en) * 1999-06-30 2001-05-08 Intel Corp. Silicon-on-insulator devices and method for producing the same
US6401536B1 (en) * 2000-02-11 2002-06-11 Motorola, Inc. Acceleration sensor and method of manufacture
US6586841B1 (en) * 2000-02-23 2003-07-01 Onix Microsystems, Inc. Mechanical landing pad formed on the underside of a MEMS device
US6413793B1 (en) * 2001-05-17 2002-07-02 Xerox Corporation Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers

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